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Light-emitting diode (LED) epitaxial structure with quaternary InAlGaN and method for preparing same

An epitaxial structure, n-type technology, applied in electrical components, gaseous chemical plating, coating, etc., can solve problems such as separation and quantum efficiency reduction

Active Publication Date: 2013-04-03
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

To solve the technical problem that the electron and hole wave functions are separated due to the piezoelectric field generated between the layers of the LED epitaxial structure, which reduces the quantum efficiency

Method used

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  • Light-emitting diode (LED) epitaxial structure with quaternary InAlGaN and method for preparing same
  • Light-emitting diode (LED) epitaxial structure with quaternary InAlGaN and method for preparing same
  • Light-emitting diode (LED) epitaxial structure with quaternary InAlGaN and method for preparing same

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Embodiment 1

[0066] see figure 1 , the LED epitaxial structure with quaternary InAlGaN of the present invention includes: a substrate 1, on the substrate 1, a GaN buffer layer 2, an undoped GaN layer 3, and an n-type doped GaN layer are sequentially arranged from bottom to top 4. InAlGaN stress release layer 5 , multiple quantum well light emitting layer 6 , p-type doped InAlGaN electron blocking layer 7 and p-type doped GaN layer 8 .

[0067] Among them, the thickness of the GaN buffer layer 2 is 25nm; the thickness of the undoped GaN layer 3 is 2.2μm; the thickness of the n-type doped GaN layer 4 is 2.3μm; the thickness of the InAlGaN stress release layer 5 is 50nm; The thickness of well light-emitting layer 6 is 240nm; the thickness of p-type doped InAlGaN electron blocking layer 7 is 50nm; the thickness of p-type doped GaN layer 8 is 250nm.

[0068] The above-mentioned LED epitaxial structure is prepared by the following preparation method of the LED epitaxial structure, and the prepa...

Embodiment 2

[0091] see Figure 4 , the LED epitaxial structure with quaternary InAlGaN of the present invention includes: a substrate 1, on the substrate 1, a GaN buffer layer 2, an undoped GaN layer 3, and an n-type doped GaN layer are sequentially arranged from bottom to top 4. Undoped GaN quantum well barrier layer 9, InAlGaN stress release layer 5, multiple quantum well light emitting layer 6, p-type doped InAlGaN electron blocking layer 7 and p-type doped GaN layer 8.

[0092] Wherein, the thickness of GaN buffer layer 2 is 20nm; The thickness of undoped GaN layer 3 is 2 μm; The thickness of n-type doped GaN layer 4 is 2 μm; The thickness of the quantum well barrier layer 9 of undoped GaN is 2.5 μm; the thickness of the InAlGaN stress release layer 5 is 40nm; the thickness of the multi-quantum well light-emitting layer 6 is 245nm; the thickness of the p-type doped InAlGaN electron blocking layer 7 is 60nm; the thickness of the p-type doped GaN layer 8 is 200nm.

[0093] The above-m...

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Abstract

The invention discloses an LED epitaxial structure with quaternary InAlGaN and a method for preparing the same. The LED epitaxial structure comprises a substrate, and a GaN buffer layer, an un-doped GaN layer, an n-type doped GaN layer, a multi-quantum-well luminous layer, a p-type doped InAlGaN electron blocking layer and a p-type doped GaN layer which are arranged successively from bottom to top. An InAlGaN stress release layer is arranged between the n-type doped GaN layer and the multi-quantum-well luminous layer. According to the LED epitaxial structure, the InAlGaN stress release layer is inserted between the n-type doped GaN layer and the multi-quantum-well luminous layer, so that stresses of multiple quantum wells can be released, the internal quantum efficiency is improved, and the luminous efficiency of the multi-quantum-well luminous layer per unit area is high. Besides, the structure is convenient to produce and suitable for industrialized application.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an LED epitaxial structure with quaternary InAlGaN and a preparation method thereof. Background technique [0002] Compared with traditional lighting sources, LED lighting sources have the advantages of energy saving, small size, high luminous efficiency, long life, no pollution and rich colors. As a lighting source, the energy consumption of white LEDs is 1 / 8 of incandescent lamps and 1 / 2 of fluorescent lamps, and its life span is as long as 100,000 hours, and it can be mercury-free, which is of great significance to energy conservation and environmental protection. [0003] Although GaN-based high-power LEDs have made great progress (cree company has reported that the light efficiency experimental research and development level of high-power white LEDs has reached 231lm / w, Nichia has also reported that it has reached 150lm / w, and domestic Sanan low-power LEDs have also r...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/12H01L33/00C23C16/44
Inventor 张宇余小明周佐华农明涛
Owner XIANGNENG HUALEI OPTOELECTRONICS
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