Light-emitting diode (LED) epitaxial structure with quaternary InAlGaN and method for preparing same

An epitaxial structure, n-type technology, applied in electrical components, gaseous chemical plating, coating, etc., can solve problems such as separation and quantum efficiency reduction

Active Publication Date: 2013-04-03
XIANGNENG HUALEI OPTOELECTRONICS
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  • Application Information

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Problems solved by technology

To solve the technical problem that the electron and hole wave functions are separated due to the piezoelec

Method used

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  • Light-emitting diode (LED) epitaxial structure with quaternary InAlGaN and method for preparing same
  • Light-emitting diode (LED) epitaxial structure with quaternary InAlGaN and method for preparing same
  • Light-emitting diode (LED) epitaxial structure with quaternary InAlGaN and method for preparing same

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[0065] Example 1:

[0066] See figure 1 The LED epitaxial structure with quaternary InAlGaN of the present invention includes: a substrate 1, on which a GaN buffer layer 2, an undoped GaN layer 3, and an n-type doped GaN layer are sequentially arranged from bottom to top. 4. InAlGaN stress release layer 5, multiple quantum well light-emitting layer 6, p-type doped InAlGaN electron blocking layer 7 and p-type doped GaN layer 8.

[0067] Among them, the thickness of the GaN buffer layer 2 is 25 nm; the thickness of the undoped GaN layer 3 is 2.2 μm; the thickness of the n-type doped GaN layer 4 is 2.3 μm; the thickness of the InAlGaN stress release layer 5 is 50 nm; The thickness of the well light-emitting layer 6 is 240 nm; the thickness of the p-type doped InAlGaN electron blocking layer 7 is 50 nm; the thickness of the p-type doped GaN layer 8 is 250 nm.

[0068] The above-mentioned LED epitaxial structure is prepared by the following LED epitaxial structure preparation method, and...

Example Embodiment

[0090] Example 2:

[0091] See Figure 4 The LED epitaxial structure with quaternary InAlGaN of the present invention includes: a substrate 1, on which a GaN buffer layer 2, an undoped GaN layer 3, and an n-type doped GaN layer are sequentially arranged from bottom to top. 4. Undoped GaN quantum well barrier layer 9, InAlGaN stress release layer 5, multiple quantum well light-emitting layer 6, p-type doped InAlGaN electron blocking layer 7 and p-type doped GaN layer 8.

[0092] Among them, the thickness of the GaN buffer layer 2 is 20 nm; the thickness of the undoped GaN layer 3 is 2 μm; the thickness of the n-type doped GaN layer 4 is 2 μm; the thickness of the quantum well barrier layer 9 of undoped GaN is 2.5 μm; the thickness of the InAlGaN stress release layer 5 is 40 nm; the thickness of the multiple quantum well light-emitting layer 6 is 245 nm; the thickness of the p-type doped InAlGaN electron blocking layer 7 is 60 nm; the thickness of the p-type doped GaN layer 8 is 20...

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Abstract

The invention discloses an LED epitaxial structure with quaternary InAlGaN and a method for preparing the same. The LED epitaxial structure comprises a substrate, and a GaN buffer layer, an un-doped GaN layer, an n-type doped GaN layer, a multi-quantum-well luminous layer, a p-type doped InAlGaN electron blocking layer and a p-type doped GaN layer which are arranged successively from bottom to top. An InAlGaN stress release layer is arranged between the n-type doped GaN layer and the multi-quantum-well luminous layer. According to the LED epitaxial structure, the InAlGaN stress release layer is inserted between the n-type doped GaN layer and the multi-quantum-well luminous layer, so that stresses of multiple quantum wells can be released, the internal quantum efficiency is improved, and the luminous efficiency of the multi-quantum-well luminous layer per unit area is high. Besides, the structure is convenient to produce and suitable for industrialized application.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an LED epitaxial structure with quaternary InAlGaN and a preparation method thereof. Background technique [0002] Compared with traditional lighting sources, LED lighting sources have the advantages of energy saving, small size, high luminous efficiency, long life, no pollution and rich colors. As a lighting source, the energy consumption of white LEDs is 1 / 8 of incandescent lamps and 1 / 2 of fluorescent lamps, and its life span is as long as 100,000 hours, and it can be mercury-free, which is of great significance to energy conservation and environmental protection. [0003] Although GaN-based high-power LEDs have made great progress (cree company has reported that the light efficiency experimental research and development level of high-power white LEDs has reached 231lm / w, Nichia has also reported that it has reached 150lm / w, and domestic Sanan low-power LEDs have also r...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/12H01L33/00C23C16/44
Inventor 张宇余小明周佐华农明涛
Owner XIANGNENG HUALEI OPTOELECTRONICS
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