Vertical transition from broadband micro strip to micro strip

Abstract

The invention relates to a vertical transition from a broadband micro strip to a micro strip. The vertical transition is composed of a first medium substrate, a middle stratum and a second medium substrate which are parallely distributed, wherein a top layer micro strip structure is arranged at one end of the first medium substrate, a bottom layer micro strip structure is arranged at the other end of the second medium substrate, the top layer micro strip structure is completely same with the bottom layer micro strip structure, the top layer micro strip structure and the bottom layer micro strip structure are oppositely distributed, the middle stratum is a metal layer provided with a U-shaped coupling groove, the top layer micro strip structure and the bottom layer micro strip structure both comprises a first micro strip line, a second micro strip line and a high-low impedance stub line of a two-stage terminal open circuit, and the high-low impedance stub line of the two-stage terminal open circuit is located between the first micro strip line and the second micro strip line. The vertical transition is simple in structure, greatly expands bandwidth, reduces system loss, enables design to be flexible, reduces cost and is wide in applicable scope.

Description

technical field [0001] The invention relates to a vertical transition structure of broadband microstrip to microstrip, which is suitable for three-dimensional interconnection of radio frequency circuit multi-layer technology, especially vertical interconnection of three-dimensional microwave and millimeter-wave integrated circuits, and belongs to the technical field of microwave and millimeter-wave communication. Background technique [0002] With the wide application of wireless communication systems in the microwave and millimeter-wave frequency bands, military electronic systems have smaller and smaller requirements for volume and weight, and the need for high integration is becoming more and more severe. Three-dimensional integrated circuits are a main means to realize the miniaturization of microwave and millimeter-wave circuits. and trends. The 3D integrated microwave circuit is a microwave circuit with a 3D three-dimensional structure based on the 2D MMCM, which makes...

AI Technical Summary

Problems solved by technology

The disadvantage of this method is: this structure can be equivalent to a low-pass circuit, especially the parasitic mode generated by the discontinuity at high frequency makes the electromagnetic wave resonate, which limits the bandwidth of this structure, and the hole structure has a great impact on the processing accuracy. Higher requirements, increased processing costs

[0004] In broadband microwave and millimeter wave systems, the current microstrip to microstrip vertical transition technology still cannot better meet the requirements of the application, so its application is subject to certain restrictions

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