Compound semiconductor device and method of manufacturing the same
A technology of nitride semiconductors and semiconductors, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as current collapse and difficulty in obtaining drain current
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no. 1 example ）
[0033] A first embodiment will be described. Figure 1A is a cross-sectional view illustrating the structure of a GaN-based HEMT (compound semiconductor device) according to the first embodiment.
[0034] In the first embodiment, as Figure 1A As shown in , a compound semiconductor stack structure 7 is formed over a substrate 1 such as a Si substrate. The compound semiconductor stack structure 7 includes an initial layer 2 a , a buffer layer 2 b , an electron channel layer 3 , a separation layer 4 , an electron supply layer 5 and an indium-containing layer 6 . The initial layer 2a may be, for example, an AlN layer about 160 nm thick. The buffer layer 2b can be a plurality of Al x Ga 1-x A stack of N (0.20.2 Ga 0.8 The N layer, which is not intentionally doped with impurities. The electron supply layer 5 may be, for example, about 20 nm thick n-type Al 0.2 Ga 0.8 N layers. The electron supply layer 5 can be doped with about 5×10 18 / cm 3 of Si as an n-type impurity. T...
no. 2 example ）
[0054] Next, a second embodiment will be described. Figure 4 is a cross-sectional view illustrating the structure of a GaN-based HEMT (compound semiconductor device) according to the second embodiment.
[0055] Contrary to the first embodiment, the second embodiment employs the insulating film 12 between the gate electrode 11g and the compound semiconductor stacked structure 7 in the case of causing the gate electrode 11g to form a Schottky contact with the compound semiconductor stacked structure 7 , so that the insulating film 12 is allowed to function as a gate insulating film. In short, the opening 13g is not formed in the insulating film 12, and an MIS type structure is employed.
[0056] The second embodiment thus configured also succeeds in achieving the effect of suppressing the current collapse in the presence of the indium elimination region 6a similarly to the first embodiment, while realizing the normal-off operation.
[0057] The material used for insulating fi...
no. 3 example ）
[0059] Next, a third embodiment will be described. Figure 5 is a cross-sectional view illustrating the structure of a GaN-based HEMT (compound semiconductor device) according to the third embodiment.
[0060] Contrary to the first embodiment, in the case where the source electrode 11s and the drain electrode 11d are formed on the flat indium-containing layer 6, in the third embodiment, the recesses 10s and 10d are formed in the indium-containing layer 6, and, A source electrode 11s and a drain electrode 11d are formed in the recesses 10s and 10d, respectively.
[0061] The third embodiment thus configured also succeeds in achieving the effect of suppressing the current collapse in the presence of the indium elimination region 6a similarly to the first embodiment, while realizing the normal-off operation.
[0062] The compound semiconductor device according to the third embodiment can be manufactured through the following steps. In forming the indium elimination region 6a ( ...
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