Schottky diode
A Schottky diode and Schottky contact technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of limited high voltage withstand capability, high reverse bias voltage, and inability to provide, to achieve improved withstand voltage capability, Effects of high reverse withstand voltage capability and low on-state power consumption
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[0023] Such as figure 1 As shown, the Schottky diode of the present invention includes: an N-type epitaxial 2 on an N-type substrate 1, a deep trench 3 in the N-type epitaxial 2, a silicon dioxide layer 4 in the deep trench 3, and a deep trench There is a polysilicon region 5 inside the silicon dioxide layer 4 in the trench 3, a Schottky contact region 6 above the N-type epitaxy 2 between the deep trenches 3, a metal layer 7 on the Schottky contact region 6, and a polysilicon region 5 and the metal layer 7 are connected by a metal wire 8, wherein the thickness of the silicon dioxide layer 4 is greater than 1000 angstroms, the depth of the deep trench 3 is greater than 4um, and the metal layer is titanium metal.
[0024] With the increase of the thickness of the silicon dioxide layer 4, the withstand voltage capability of the present invention increases accordingly, and the ratio of the thickness of the silicon dioxide layer to the withstand voltage capability of the present in...
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