Manufacturing method of trench type metal oxide semiconductor field effect transistor

Abstract

The invention relates to the electronic device field, and discloses a groove-type metal oxide semiconductor field-effect transistor and a production method thereof. According to the groove-type metal oxide semiconductor field-effect transistor and the production method thereof, grooves with different widths are formed with a two-stage field plate effect after being filled with polycrystalline silicon, so that electric field peaks can be transferred to the tail end of the field plate, that is, the bottom of the narrow polycrystalline silicon; and meanwhile, through length optimizing, the electric field peaks can be reduced, withstand voltages can be improved, unclamped inductive switching characteristics of the product are improved, on-resistance is reduced and breakover consumption of the product is reduced. The groove penetrates through an epitaxial layer and further goes into a substrate, so that an electric field is prevented from existing in the bottom of the groove, and the bottom is prevented from being brokendown.

Description

technical field [0001] The invention relates to the field of electronic devices, in particular to an ultra-deep trench metal oxide semiconductor field effect transistor. Background technique [0002] In recent years, vertical double-diffused metal oxide semiconductor field effect transistor technology has developed rapidly, and has become one of the most important high-power mainstream devices in the field of power electronics. Low on-resistance and low power consumption are important directions for product pursuit. Therefore, metal The product structure of oxide semiconductor field effect transistors has also shifted from planar devices to trench devices. However, for traditional trench devices, the depth of the trench is all within the epitaxial layer, and in order to improve the withstand voltage of the product, most of the effort has been focused on how to better deal with the bottom of the trench, which has been able to obtain higher voltage. [0003] In the prior art,...

AI Technical Summary

Problems solved by technology

However, for traditional trench devices, the depth of the trench is all in the epitaxial layer, and in order to improve the withstand voltage of the product, most of the energy is put on how to better deal with the bottom of the trench, and a higher voltage can already be obtained.

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