Structure of bottom heater of big-size sapphire furnace

Abstract

The invention discloses a structure of a bottom heater of a big-size sapphire furnace. According to the structure, double helix tungsten filament is taken as a heating element and is supported for fixation through a supporting structure. Compared with a uniform thermal field structure provided by a tungsten mesh belt in the prior art, the structure of the bottom heater of the big-size sapphire furnace, which is provided by the embodiment of the invention, has the advantages that the double helix tungsten filament is taken as the heating element of the bottom heater, so that smaller length can supply bigger resistance value, at the same time, the structure has relative suppleness and can be bent in smaller space so as to be processed to be in an adequate shape as per thermal field requirements, and ideal radial and axial temperature gradient can be generated to create favorable thermal field conditions for growth of big-size sapphire crystal; and compared with the tungsten mesh belt, the structure has great price advantage, and above all, the structure is easy to process and manufacture.

Description

technical field [0001] The invention relates to the technical field of sapphire crystal growth equipment, in particular to a large-size sapphire furnace bottom heater structure. Background technique [0002] At present, sapphire substrate companies and LED epitaxy manufacturers use 2-inch and 4-inch substrates as the main substrates. As LEDs become more and more widely used, epitaxy manufacturers at home and abroad gradually introduce 4-inch and 6-inch epitaxy production processes and equipment. , 4-inch and 6-inch sapphire substrates will promote a substantial reduction in cost, and the demand for large-size sapphire substrates will also rapidly heat up, thereby promoting a surge in demand for large-scale sapphire crystal growth furnaces. [0003] During the crystal growth process, a certain axial temperature gradient and radial temperature gradient are required, while the traditional sapphire kneading furnace can only meet the growth of small-sized sapphire crystals, and o...

AI Technical Summary

Problems solved by technology

[0005] The existing technology mainly has the following key shortcomings: the radial and axial temperature gradients of the crystal are not ideal; on the other hand, the tungsten mesh belt heating element is expensive, the manufacturing cost is high, and the processing and manufacturing are relatively complicated

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