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Thin film transistor substrate

A technology for thin film transistors and substrates, which is applied in the field of thin film transistor substrates and thin film transistor substrate manufacturing, can solve problems such as poor conduction and poor quality, and achieve the effect of good contact

Inactive Publication Date: 2013-04-17
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Therefore, even if an ITO film or the like is provided on the surface of the contact hole as a pixel electrode, although the ITO film is in contact with the drain electrode, the part of the drain electrode that is in contact with the pixel electrode is passivated by a high-resistance film of aluminum fluoride or aluminum oxide. film, etc., so poor conduction may occur, resulting in poor quality

Method used

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Embodiment Construction

[0059] Embodiments of the present invention will be described in detail below based on the drawings. However, the present invention is not limited to the following embodiments, and other configurations are possible.

[0060]

[0061] figure 1 and figure 2 The liquid crystal display device 10 of this embodiment is shown. The liquid crystal display device 10 has a TFT substrate 20 and a counter substrate 30 arranged to face each other. The two substrates 20 and 30 are bonded together by a sealing member 40 arranged in a frame shape on their outer peripheral edges. In a space surrounded by the sealing member 40 between the two substrates 20 and 30, a liquid crystal layer 50 is provided as a display layer. The liquid crystal display device 10 has a display region D in which a plurality of pixels are arranged in a matrix formed inside the sealing member 40 , and a region surrounded by the display region D serves as a frame region F.

[0062] (TFT substrate)

[0063] imag...

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Abstract

The purpose of the present invention is to achieve good contact between a drain electrode and a pixel electrode in a thin film transistor substrate. A drain electrode (25d) has a configuration wherein a first conductive film (25dp) and a second conductive film (25dq), which is provided on top of the first conductive film (25dp) and formed of aluminum, are laminated. The second conductive film (25dq) is separated from a first contact hole (27a) so that a gap portion (28a) communicating with the first contact hole (27a) is formed between the second conductive film (25dq) and the first contact hole (27a). A pixel electrode (29) is provided so as not to be in contact with the second conductive film (25dq) of the drain electrode (25d).

Description

technical field [0001] The present invention relates to a thin film transistor, a liquid crystal display device including the thin film transistor, and a method for manufacturing a thin film transistor substrate, and more particularly to a thin film transistor substrate, a liquid crystal display device, and a thin film transistor having such a thin film transistor using a semiconductor layer including an oxide semiconductor Manufacturing method of the substrate. Background technique [0002] In a thin film transistor substrate constituting a liquid crystal display device, a thin film transistor (Thin Film Transistor, hereinafter referred to as TFT) is used as a switching element of each pixel which is the minimum unit of an image. Conventionally, a TFT whose semiconductor layer includes amorphous silicon has been used, however, in recent years, TFTs having a semiconductor layer including an oxide semiconductor have been proposed instead of TFTs having an amorphous silicon se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786G02F1/1368H01L21/306H01L21/308H01L21/336H01L21/768H01L23/522
CPCG02F1/136227H01L27/1225H01L29/41733H01L29/458H01L27/124H01L21/32134H01L21/76805G02F1/136213G02F1/1368H01L27/1255H01L29/45H01L29/7869G02F1/136H01L33/0041
Inventor 美崎克纪
Owner SHARP KK
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