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Preparation method of silicon carbide micro-powder used in silicon carbide crystal growth

A silicon carbide micropowder and crystal growth technology, applied in chemical instruments and methods, carbon compounds, inorganic chemistry, etc., can solve problems such as contamination, uneven particle size, waste, etc., achieve good particle size uniformity, and ensure product purity , Heating effect evenly

Active Publication Date: 2013-04-24
HEBEI SYNLIGHT CRYSTAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The silicon carbide micropowder synthesized by this method is sintered into a block and needs to be crushed again, resulting in secondary pollution of the silicon carbide powder. The synthetic micropowder has different particle sizes after crushing and needs to be screened, resulting in contamination and waste.
Moreover, the single synthesis amount of induction heating synthesis is small, and it is difficult to meet the requirements of large-scale production.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] (1) Mix 1200g of carbon powder with a purity of 99.999% and 2800g of silicon powder with a purity of 99.999%;

[0020] (2) The microwave frequency is selected as 900MHz, and the mixed carbon powder and silicon powder are put into the heating chamber, and argon gas is introduced as a protective gas after vacuuming;

[0021] (3) Heating, including the following steps:

[0022] a. Maintain the pressure in the heating chamber at 1KPa, heat the temperature in the heating chamber to 1500°C, and keep it for 0.5 hours;

[0023] b. Maintain the pressure in the heating chamber at 60KPa, heat the temperature in the heating chamber to 2100° C., and keep it for 1 hour.

[0024] After cooling, 4000 g of synthetic silicon carbide micropowder was obtained, with a purity of not less than 99.999%.

Embodiment 2

[0026] (1) Mix 1200g of carbon powder with a purity of 99.999% and 2800g of silicon powder with a purity of 99.999%;

[0027] (2) The microwave frequency is selected as 900MHz, and the mixed carbon powder and silicon powder are put into the heating chamber, and argon gas is introduced as a protective gas after vacuuming;

[0028] (3) Heating, including the following steps:

[0029] a. Maintain the pressure in the heating chamber at 1KPa, heat the temperature in the heating chamber to 1500°C, and keep it for 1 hour;

[0030] b. Maintain the pressure in the heating chamber at 60KPa, heat the temperature in the heating chamber to 2100°C, and keep it for 2 hours.

[0031] After cooling, 4000 g of synthetic silicon carbide micropowder was obtained, with a purity of not less than 99.999%.

Embodiment 3

[0033] (1) Mix 2400g of carbon powder with a purity of 99.9999% and 5600g of silicon powder with a purity of 99.999%;

[0034] (2) The microwave frequency is selected as 2000MHz, and the mixed carbon powder and silicon powder are put into the heating chamber, and argon gas is introduced as a protective gas after vacuuming;

[0035] (3) Heating, including the following steps:

[0036] a. Maintain the pressure in the heating chamber at 1KPa, heat the temperature in the heating chamber to 1500°C, and keep it for 2 hours;

[0037] b. Maintain the pressure in the heating chamber at 50KPa, heat the temperature in the heating chamber to 2100°C, and keep it for 3 hours.

[0038] After cooling, 8000 g of synthetic silicon carbide micropowder was obtained, with a purity of not less than 99.999%.

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Abstract

The invention relates to a preparation method of silicon carbide micro-powder used in silicon carbide crystal growth. The method comprises the steps that: carbon powder and silicon powder are uniformly mixed, such that a mixture is obtained; and the mixture is added into a heating chamber, and is heated by using microwaves, such that the silicon carbide micro-powder used in silicon carbide crystal growth is obtained. According to the invention, microwave heating is adopted, and heating is uniform. The synthesized silicon carbide particles have good particle size homogeneity. The obtained product does not need to be crushed by using a traditional ball mill, such that secondary pollution is prevented, and product purity is ensured. Also, a single-time synthesizing amount is high, and efficiency is high.

Description

technical field [0001] The invention relates to a method for preparing silicon carbide micropowder, in particular to a method for preparing silicon carbide micropowder used for growing silicon carbide crystals. Background technique [0002] Existing high-purity micropowders for silicon carbide crystal growth are mostly broken by induction heating and sintering. For example, after mixing silicon powder and carbon powder, they are placed in a graphite crucible and synthesized by induction heating. Silicon carbide powder synthesized by reaction of silicon powder and silicon powder. The silicon carbide micropowder synthesized by this method is sintered into a block and needs to be crushed again, resulting in secondary pollution of the silicon carbide powder. The synthetic micropowder has different particle sizes after crushing and needs to be screened, resulting in contamination and waste. Moreover, the single synthesis amount of induction heating synthesis is small, which make...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36C01B32/984
Inventor 高宇陶莹邓树军段聪赵梅玉
Owner HEBEI SYNLIGHT CRYSTAL CO LTD
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