BaGa2GeS6 compound, BaGa2GeS6 nonlinear optical crystal, and preparation method and application thereof

A technology of nonlinear optics and compounds, applied in nonlinear optics, germanium compounds, chemical instruments and methods, etc., can solve problems such as crystal growth difficulties, affecting practical use, and slow development of nonlinear crystals

Inactive Publication Date: 2013-04-24
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The development of nonlinear crystals in the infrared band is relatively slow; the materials in the infrared region are mostly ABC 2 Type chalcopyrite structure semiconductor materials, such as AgGaQ 2 (Q=S, Se, Te), the light damage threshold of infrared nonlinear crystal is too low and the crystal growth is difficult, which directly affects the practical use

Method used

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  • BaGa2GeS6 compound, BaGa2GeS6 nonlinear optical crystal, and preparation method and application thereof
  • BaGa2GeS6 compound, BaGa2GeS6 nonlinear optical crystal, and preparation method and application thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Embodiment 1, prepare powdery BaGa 2 GeS 6 Compound:

[0044] Using BaS+Ga 2 S 3 + GeS 2 =BaGa 2 GeS 6 Reaction formula to prepare BaGa by solid state reaction method 2 GeS 6 Compound; The BaS is 3.388 grams, the Ga 2 S 3 4.713 g, the GeS 2 2.735 grams; that is, BaS: Ga 2 S 3 : GeS 2 =0.02mol:0.02mol:0.02mol;

[0045] The specific operation steps are: weigh the reagents according to the above dosage in the glove box, put them into the mortar, mix and carefully grind them, then put them into a quartz tube of Φ12mm×16mm, and evacuate them to 10 -3 After pa, the quartz tube is melted and packaged with a hydrogen-oxygen flame, put into a muffle furnace, slowly raised to 800°C, and kept at a constant temperature for 48 hours. After cooling, take it out, take out the sample and re-grind and mix it, and then put it in the quartz tube for vacuum packaging. , sintered in a muffle furnace at 700 ° C for 24 hours, at this time, take it out, put it in a mortar, smash...

Embodiment 2

[0046] Embodiment 2, prepare powdery BaGa 2 GeS 6 Compound:

[0047] Adopt BaS+2Ga+Ge+5S=BaGa 2 GeS 6 Reaction formula to prepare BaGa by solid state reaction method 2 GeS 6 Compound; the BaS is 3.388 grams, the Ga is 2.789 grams, the Ge is 1.453 grams, and the S is 3.207 grams, i.e. BaS: Ga: Ge: S=0.02mol: 0.04mol: 0.02mol: 0.10mol ;

[0048] The specific operation steps are: weigh the reagents according to the above dosage in the glove box, put them into the mortar, mix and carefully grind them, then put them into a Φ12mm×16mm quartz tube, and vacuumize to 10 -3 After pa, the quartz tube is melted and packaged with a flame, put into a muffle furnace, and slowly raised to 950°C, the heating rate is 10°C / hour, and the temperature is kept constant for 48 hours. After cooling, take it out, put it into a mortar, mash and grind it to obtain Preparation of powdered BaGa 2 GeS 6 Compound products.

Embodiment 3

[0049] Embodiment 3, prepare powdery BaGa 2 GeS 6 Compound:

[0050] Using BaS+Ga 2 S 3 +Ge+2S=BaGa 2 GeS 6 ; Reaction formula prepares BaGa by solid state reaction method 2 GeS 6 Compound; The BaS is 3.388 grams, the Ga 2 S 3 is 4.713 grams, the Ge is 1.453 grams, and the S is 1.283 grams, namely BaS:Ga 2 S 3 : Ge: S=0.02mol: 0.02mol: 0.02mol: 0.04mol;

[0051] The specific operation steps are as follows: weigh the reagents in the glove box according to the above dosage, put them into the mortar, mix and carefully grind them, then put them into a Φ12mm×16mm quartz tube, and evacuate them to 10 -3 After pa, melt and seal the quartz tube with a flame, put it into a muffle furnace, raise it to 750°C, the heating rate is 60°C / hour, keep the temperature for 48 hours, take it out after cooling, put it in a mortar, smash and grind it to get a powder BaGa 2 GeS 6 Compound products.

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Abstract

The invention relates to a BaGa2GeS6 compound, a BaGa2GeS6 nonlinear optical crystal, and a preparation method and application thereof. The BaGa2GeS6 compound is prepared by a solid reaction; and the BaGa2GeS6 nonlinear optical crystal is grown through a high-temperature melt spontaneous crystallization method or a Bridgman-Stockbarger method. In the growth of the BaGa2GeS6 nonlinear optical crystal, the crystal grows easily and is transparent without packaging; and the method has advantages of fast growth, cost low and easiness to obtain large size crystal, etc. The obtained BaGa2GeS6 nonlinear optical crystal has advantages of wide transmitting band, large hardness, good mechanical performance, invulnerability to break and deliquescence, and easiness to processing and preservation, and can be used in the production of nonlinear optical devices.

Description

technical field [0001] The present invention relates to a kind of BaGa 2 GeS 6 Compound, BaGa 2 GeS 6 nonlinear optical crystals (BaGa 2 GeS 6 single crystal) and the BaGa 2 GeS 6 Single crystal preparation method and the BaGa 2 GeS 6 Use of single crystals for fabrication of nonlinear optical devices. Background technique [0002] Crystals with nonlinear optical effects are called nonlinear optical crystals. Here nonlinear optical effects refer to effects such as frequency doubling, sum frequency, difference frequency, and parametric amplification. Nonlinear optical effects are only possible in crystals that do not have a center of symmetry. Using the nonlinear optical effect of crystals, nonlinear optical devices such as second harmonic generators, up and down frequency converters, and optical parametric oscillators can be made. The laser generated by the laser can be frequency converted by nonlinear optical devices, so as to obtain more useful wavelengths of l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G17/00C30B29/46C30B9/04C30B11/00G02F1/355
Inventor 姚吉勇尹文龙冯凯梅大江傅佩珍吴以成
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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