Large-size and high-quality factor carbon-doped titanium gem laser crystal and preparation method thereof

A laser crystal, high-quality technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., to achieve the effect of reducing infrared residual absorption coefficient, improving quality factor, and high optical quality

Inactive Publication Date: 2013-04-24
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Aiming at the problem that the preparation method of titanium sapphire is easy to cause defects in the prior art, the present inventi

Method used

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  • Large-size and high-quality factor carbon-doped titanium gem laser crystal and preparation method thereof
  • Large-size and high-quality factor carbon-doped titanium gem laser crystal and preparation method thereof
  • Large-size and high-quality factor carbon-doped titanium gem laser crystal and preparation method thereof

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Effect test

Embodiment 1

[0043] Weigh the α-Al with a purity of 99.999% 2 o 3 Raw material 30Kg, 0.2at% spectroscopically pure Ti 2 o 3 , and 0.5wt% spectrally pure graphite carbon, mixed and ground on a planetary ball mill for 24 hours, taken out and then cold-dried and pressed to form a block. The block was sintered at a high temperature of 1600°C for 12 hours in a vacuum environment, and the sintered block was used for later use.

[0044] The specific steps for growing carbon-doped Ti:sapphire laser crystals by the Kyroplasty method are as follows: ①Put the spare crystal growth raw materials into a tungsten crucible, put the crucible into the Kyropoulos furnace, and install the [11-20] direction-oriented seed crystals in the seed crystals. On the crystal clamp, the seed crystal direction error is less than 0.5°, the seed crystal clamp is installed on the seed crystal rod, the furnace cover is closed, the cooling water circulation system is started, and the knuckle-burning furnace is evacuated to ...

Embodiment 2

[0050] Weigh the α-Al with a purity of 99.999% 2 o 3 Raw material 10Kg, 0.3at% spectroscopically pure Ti 2 o 3 , and 0.4wt% spectrally pure graphitic carbon, mixed and ground on a planetary ball mill for 24 hours, taken out and then cold-dried and pressed to form a block. The block was sintered at a high temperature of 1500°C for 12 hours in a vacuum environment, and the sintered block was used for later use.

[0051] The specific steps for growing carbon-doped Ti:sapphire laser crystals by the Kyropoulos method are as follows: ①Put the spare crystal growth raw materials into a tungsten crucible, put the crucible into the Kyropoulos furnace, and install the oriented seed crystal in the [0001] direction in the seed crystal holder Above, the seed crystal direction error is less than 0.5°, the seed crystal clip is installed on the seed crystal rod, the furnace cover is closed, the cooling water circulation system is started, and the vacuum of the knuckle-burning furnace is lowe...

Embodiment 3

[0053] Weigh the α-Al with a purity of 99.999% 2 o 3 Raw material 10Kg, 0.25at% spectroscopically pure Ti 2 o 3 , and 0.45wt% spectrally pure graphite carbon, mixed and ground on a planetary ball mill for 24 hours, taken out and then cold-dried and pressed to form a block. The block was sintered at a high temperature of 1500°C for 12 hours in a vacuum environment, and the sintered block was used for later use.

[0054] The specific steps for growing carbon-doped Ti:sapphire laser crystals by the Kyropoulos method are as follows: ①Put the spare crystal growth raw materials into a tungsten crucible, put the crucible into the Kyropoulos furnace, and install the [1-102] direction oriented seed crystal in the seed On the crystal clamp, the seed crystal direction error is less than 0.5°, the seed crystal clamp is installed on the seed crystal rod, the furnace cover is closed, the cooling water circulation system is started, and the knuckle-burning furnace is evacuated to less than...

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Abstract

The invention provides a large-size and high-quality factor carbon-doped titanium gem laser crystal. The crystal comprises an Al2O3 host material, wherein the doping content of carbon in the carbon-doped titanium gem laser crystal is 0.05-1 wt% of total mass; and the doping content of titanium in the carbon-doped titanium gem laser crystal is 0.1-0.5 at%. The invention further discloses a preparation method for the crystal. The method comprises the following steps: raw materials are mixed, grinded, formed and sintered by proportioning to prepare crystal growth block materials; and then the kyropoulos method technology is adopted to grow. The carbon-doped titanium gem laser crystal has high quality factor (FOM (Figure of Merit) value). The titanium gem laser crystal with large size, high optical quality and high quality factor can efficiently grow; the FOM value is higher than 300; and the method can be used for producing ultrafast high-energy lasers.

Description

technical field [0001] The invention relates to a titanium sapphire crystal in the field of high-intensity laser materials, in particular to a large-size high-quality factor carbon-doped titanium sapphire laser crystal and a preparation method and application thereof by a Kyropoulos method. Background technique [0002] Due to its wide emission bandwidth (660nm-1100nm), large emission cross-section, high thermal conductivity, and excellent physical and chemical properties, Ti:Sapphire laser crystal has become the most widely used tunable laser crystal and produces ultra-fast high-power laser operation. It is widely used in environmental pollution monitoring, military applications, transient optics, laser spectroscopy, laser chemistry, laser remote sensing, lidar and other fields. In recent years, with the development of femtosecond ultrafast high-power laser technology, Ti:Sapphire has an incomparable advantage in the field of high-power lasers compared to other tunable crys...

Claims

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Application Information

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IPC IPC(8): C30B29/20C30B17/00H01S3/16
Inventor 唐慧丽徐军胡克艳钱小波王静雅李红军吴峰姜大朋汪传勇
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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