18 results about "Laser chemistry" patented technology

The invention discloses a laser-chemical composite surface planarization process based on a laser stripping sheet. The method comprises the following steps: firstly, carrying out surface scanning on the surface of a wafer subjected to laser-ultrasonic stripping by adopting femtosecond laser, thinning the wafer to a first target thickness through an ultra-short pulse cold working mechanism, and optimizing the sharp corner fluctuation of the surface at the same time; then immersing the wafer into a hydrofluoric acid-nitric acid mixed solution containing a platinum / iridium catalyst, accurately etching the residual sharp corner by utilizing a selective catalytic reaction of a contact point of a catalyst plate and the wafer, and feeding back and adjusting processing parameters in real time through a morphology monitoring module and an infrared thermal imaging system; and finally, thinning to the required thickness by adopting chemical mechanical polishing, and obtaining an atomic-scale flat surface. According to the technology, through the synergistic effect of laser pre-thinning and chemical etching, the problems that a traditional grinding technology is low in efficiency and large in material consumption are solved, and the technology has the advantages of being efficient, low in damage, high in precision and the like and is suitable for surface treatment of hard semiconductor wafers such as silicon carbide and gallium nitride.

The invention discloses a SiC-coated C nano whisker material as well as a preparation method and application thereof. The preparation method of the SiC-at-C nano whisker material comprises the following steps: putting a substrate material into a deposition cavity of laser chemical vapor deposition equipment, vacuumizing the deposition cavity to 10Pa or below, introducing H2 and carrier gas carrying a precursor, adjusting the deposition pressure to a target value, and stabilizing the deposition pressure; and starting laser to heat the substrate material, raising the temperature of the substrate material to a deposition temperature and starting deposition, after deposition is completed, sequentially stopping introducing the precursor and the carrier gas, stopping laser, then stopping introducing H2, vacuumizing the reaction chamber to be below 20Pa, and after the substrate material is cooled to room temperature, taking out the substrate material. The SiC-coated C nano whisker material prepared by the method has excellent electromagnetic shielding performance and flexibility, is simple in process, short in period and easy to scale, and has a wide application prospect in the field of electromagnetic shielding equipment.

The invention provides a manufacturing method of an ultra-micro diameter milling cutter. The method comprises the steps of ultra-fine grain gradient Co matrix pretreatment, ultra-thin gradient AlCrN / DLC composite coating deposition, micro cutting edge laser-chemical mechanical composite finishing, targeted cryogenic stress regulation and intelligent detection and screening. The bending strength is larger than or equal to 4500 MPa through gradient modification of a 0.3-0.5 micron ultra-fine grain WC-Co matrix, a 0.8-1.5 micron ultra-thin gradient coating is deposited through a PECVD-IBAD composite technology, precise control over the radius of a cutting edge ranging from 0.003 mm to 0.01 mm is achieved through composite finishing, and the residual compressive stress of the coating is stabilized to range from-1.0 GPa to-0.6 GPa through-135 DEG C targeted deep cooling. Finally, the coating hardness of the ultra-micro-diameter milling cutter manufactured through the manufacturing method is 32-36 GPa, the friction coefficient is 0.07-0.10, the film-substrate binding force is larger than or equal to 55 N, and the ultra-micro-diameter milling cutter meets the requirement for high-end manufacturing and high-precision cutting.

The application relates to a preparation method of a <010> preferentially oriented beta-Ga2O3 film, and the specific steps are as follows: 1) after a glass substrate is pretreated, the glass substrate is placed into a deposition cavity, and the deposition cavity is vacuumized to below 10 Pa; 2) dilution gas is introduced into the deposition cavity to make the deposition cavity reach a deposition pressure, the dilution gas is closed, a precursor in a raw material tank is heated to a sublimation temperature, a laser is turned on to irradiate the surface of the glass substrate, the glass substrate reaches a deposition temperature, meanwhile, carrier gas and reaction gas are introduced into the deposition cavity to carry out deposition, and a beta-Ga2O3 film is deposited on the glass substrate. The laser chemical vapor deposition method is adopted, the orientation of the film is controlled by adjusting experimental parameters, the <010> preferentially oriented beta-Ga2O3 polycrystal film is successfully prepared on the surface of the low-cost quartz glass substrate, and the application range of the beta-Ga2O3 polycrystal film is widened, which has very important significance.

The present invention discloses a method for in-situ growth of a thermal shock-resistant tantalum carbide coating on a carbon-based substrate. The specific steps are as follows: 1) placing the substrate in a deposition chamber of a laser chemical vapor deposition device; 2) evacuating the deposition chamber to below the vacuum threshold, introducing H2, a carbon source, and a carrier gas containing a tantalum source, Ar, and adjusting the deposition pressure and stabilizing it for 1 to 5 minutes; 3) turning on the laser to irradiate the substrate, heating it to the deposition temperature for deposition, and then turning off the carrier gas Ar and the laser after deposition. When the substrate temperature reaches 150°C, turning off the H2 and carbon source, and then evacuating the substrate. Waiting for the substrate to cool to room temperature, a tantalum carbide coating material is obtained on the substrate surface. The bottom of the porous tantalum carbide coating material provided by the present invention, which contacts the substrate, has a porous structure that can buffer thermal shock stress. The surface is composed of dense tantalum carbide, which can provide good protection for the substrate, significantly alleviate the problem of thermal expansion coefficient mismatch between the coating and the substrate, and improve the thermal shock resistance of the coating.

The application discloses a safe and efficient preparation method of hafnium carbide coating, adopts a laser chemical vapor deposition method, and comprises the following steps: substrate cleaning, equipment connection, substrate placement, equipment vacuumizing, raw material tank heating, reaction environment construction, reaction, laser irradiation on the substrate to start the substrate surface temperature rise to the reaction temperature, then reaction with the precursor gas and the reaction gas to start the deposition reaction, and post-processing, taking out the substrate, and covering the hafnium carbide coating on the substrate surface. The safe and efficient preparation method of the hafnium carbide coating has the advantages that the hafnium carbide coating obtained by the method has extremely high stability, excellent heat shock resistance and ablation resistance, and a high deposition rate, and the required hafnium carbide coating can be obtained only by short-time deposition, the method is convenient to use, short in time consumption, and can effectively reduce resource loss.

The invention discloses a preparation process and a surface porous layer pretreatment process of a neodymium-iron-boron magnet. The preparation process comprises the following steps: constructing a gradient pore structure, namely constructing the gradient pore structure on the surface of the sintered neodymium-iron-boron magnet through a laser etching surface micropore array or a chemical etching method or laser-chemical composite etching; grain boundary phase modification is carried out, an Nd (Al, Cu) 6 phase and TiB2 nanoparticles are formed by adding Al-Cu-Ti alloy powder, and an active grain boundary phase is generated in situ. A gradient pore structure is constructed on the surface of the magnet by adopting a laser surface micropore array or a chemical etching method or laser-chemical composite etching, so that the permeation rate and the permeation effect of a diffusant are improved, and the magnet coercive force of the neodymium-iron-boron magnet is improved in a leap-over manner. Meanwhile, an NdAl6 phase and TiB2 nanoparticles are formed by adding an Al-containing alloy, an active grain boundary phase is generated in situ, diffusion activation energy is reduced, and therefore the utilization rate of heavy rare earth is increased.

The invention discloses a SiCnw / Ni composite material as well as a preparation method and application thereof. The preparation method of the SiCnw / Ni composite material comprises the following steps: putting a substrate material into a deposition cavity of laser chemical vapor deposition equipment, vacuumizing the deposition cavity to 10Pa or below, introducing H2 and carrier gas carrying a precursor, adjusting the deposition pressure to a target value, and stabilizing the deposition pressure; and starting laser to heat the substrate material, raising the temperature of the substrate material to a deposition temperature and starting deposition, after deposition is completed, sequentially stopping introduction of the precursor and the carrier gas, closing the laser, then stopping introduction of H2, vacuumizing the reaction chamber to 20 Pa or below, taking out the substrate material after the substrate material is cooled to the room temperature, and electroplating nickel on the surface of the substrate material. The shielding effectiveness of the prepared SiCnw / Ni composite material reaches 69 dB (8-12 GHz) when the thickness is 0.39 mm, and the SiCnw / Ni composite material is good in flexibility, high in stability and wide in application prospect.

The invention discloses a method for in-situ growth of a thermal shock resistant tantalum carbide coating on a carbon-based substrate. The method comprises the following specific steps: 1) putting a substrate into a deposition cavity of laser chemical vapor deposition equipment; 2) vacuumizing the deposition cavity to be below a vacuum threshold value, introducing H2, a carbon source and carrier gas Ar containing a tantalum source, adjusting the deposition pressure and stabilizing for 1-5 minutes; and (3) laser is started to irradiate the substrate, the temperature is increased to the deposition temperature for deposition, the carrier gas Ar and the laser are sequentially closed after deposition is completed, H2 and the carbon source are closed when the temperature of the substrate is 150 DEG C, then vacuumizing is conducted, and the tantalum carbide coating material is obtained on the surface of the substrate after the substrate is cooled to the room temperature. The bottom, in contact with the substrate, of the tantalum carbide porous coating material is of a porous structure, thermal shock stress can be buffered, the surface of the tantalum carbide porous coating material is composed of compact tantalum carbide, the substrate can be well protected, the problem that the thermal expansion coefficients of the coating and the substrate are not matched can be remarkably solved, and the thermal shock resistance of the coating is improved.

The invention relates to the technical field of glue removal of electronic equipment, in particular to multi-axis linkage laser-chemical composite glue removal equipment. According to the technical scheme, the multi-axis laser glue removing device comprises a multi-axis laser glue removing machine and a discharging port formed in one side of the multi-axis laser glue removing machine, a mobile phone screen is arranged in the discharging port in a sliding mode, and the multi-axis laser glue removing device further comprises a connecting cabinet which is fixedly connected to the outer wall of one side of the multi-axis laser glue removing machine and corresponds to the discharging port; and the material receiving opening is formed in the top of the connecting cabinet and allows a mobile phone screen to slide in. Through cooperation of the multi-axis laser glue removing machine, the connecting cabinet, the containing drawer, the material receiving grid tray and other structures, most of solidified structural glue is removed through multi-axis linkage of the multi-axis laser glue removing machine, then a mobile phone screen is fed into the containing drawer of the connecting cabinet from the discharging port through the guiding supporting block, residual colloidal particles in tiny gaps are treated through a glue removing solution in the containing drawer, and therefore the mobile phone screen can be completely removed. Laser and chemical composite degumming is achieved, the defect of single laser or chemical degumming is overcome, efficiency is improved, and damage to the base material is reduced.

The invention discloses laser chemical vapor phase additive manufacturing equipment for a continuous fiber reinforced ceramic matrix composite and a manufacturing method of the laser chemical vapor phase additive manufacturing equipment. In the manufacturing method, a precursor raw material is evaporated, mixed with gas and then fed into a gas-phase reaction cavity, continuous laser is focused on a fiber substrate in the cavity, and in-situ deposition of a ceramic matrix is achieved; the workbench realizes layered construction through multi-axis movement, and the three-dimensional ceramic matrix composite material is prepared through layer-by-layer deposition; the equipment is matched with an infrared temperature measurement feedback device, a laser power regulation device, a shielding gas purging device, a fiber synchronous conveying device and the like. Controllable deposition of the ceramic matrix is achieved by means of the laser local directional heating characteristic, the bottleneck effect and thickness limitation existing in the chemical vapor deposition process are broken through in combination with cooperative movement of the fiber conveying device and the control platform, the key technical problems of uniform deposition, densification preparation and the like of the high-crystallinity ceramic matrix are effectively solved, and the high-crystallinity ceramic matrix is obtained. A new thought and a process method are provided for developing the fiber reinforced ceramic matrix composite material with high performance and high compactness.

The present application discloses additive manufactured dental devices and methods for making net shaped ceramic and metallic dental devices by a 3D laser chemical vapor deposition method using a mixed gaseous state chemical vapor source. Dental zirconia dental prosthetic devices are made to replicate the heterogenous natural optical characteristics of natural tooth dentition. In this embodiment a method for fabricating net shaped dental devices with a heterogeneous discrete volumetric compositional and material growth morphology variations within a net shaped dental prosthetic body that mimics natural tooth dentition comprising ceramic and metallic materials is disclosed.

1. The name of this design product: Modular air-cooled laser. 2. Application of this design product: This product is used in laser industry fields such as laser marking, laser cleaning, laser additive manufacturing, laser welding, laser cutting, laser heat treatment, laser coating and laser chemistry. 3. The key point of the design of this product lies in its shape. 4. The picture or photo that best illustrates the design points: Stereoscopic drawing 1.

The invention provides laser chemical vapor phase additive manufacturing equipment and method for ceramics and composite materials thereof, the equipment comprises a precursor gas control conveying system, a laser chemical vapor phase additive system and a powder laying system, and high-precision and high-efficiency ceramic material deposition can be achieved. According to the invention, through accurate focusing of laser beams, based on the synergistic effect of a layer-by-layer powder laying process and a selective laser scanning technology, point-by-point and line-by-line accurate energy input of a powder material is realized, and efficient additive manufacturing of high-performance ceramic and a composite material thereof is completed under the condition of not depending on a mold. Besides, sintering and post-processing steps in a traditional process are omitted in the additive manufacturing process, forming-compacting integrated manufacturing of the high-performance ceramic and the composite material of the high-performance ceramic is achieved, and the problems that a traditional ceramic preparation method is long in period, poor in size precision, poor in structure designability and the like are solved. And a new scientific strategy is provided for additive manufacturing of high-performance and high-crystallinity ceramic and a composite material thereof.

The invention provides a crystalline silicon solar cell metallization method and a crystalline silicon solar cell, and the method comprises the following steps: S1), carrying out the grooving of the surface of a solar cell semi-finished product, and obtaining a groove; s2) preparing a metal seed layer at the groove through laser chemical vapor deposition; and S3) electroplating copper on the metal seed layer to obtain the crystalline silicon solar cell. Compared with the prior art, the metal seed layer is prepared through laser chemical vapor deposition, the compactness of the seed layer can be remarkably improved, the copper internal expansion blocking capacity of the seed layer is improved, the corrosion resistance is improved, meanwhile, the binding force of the metal grid line and the silicon wafer is improved, and the electroplating tension is remarkably improved.

The application discloses a three-dimensional spiral magnetic field assisted laser chemical vapor phase system and application thereof, wherein a gas inlet system of the laser chemical vapor deposition system is designed as a spiral pipeline and an external magnetic field is additionally arranged to realize uniform mixing of molecules of each precursor gas, improve a dissociation rate of the precursor and increase utilization efficiency of the precursor; a three-dimensional spiral magnetic field is additionally arranged in a film deposition area, a deposition path of a gas phase reactant is controlled by using the three-dimensional spiral gradient magnetic field, directional arrangement of a film is induced, under the synergistic action of the magnetic field and a laser heat field, film uniformity is optimized in the process of high-speed film forming, and crystallinity and preferred orientation of the film are improved. By using Zr element doped GdBCO high-temperature superconducting film, the external magnetic field can promote the internal film to form ordered arrangement nanoscale non-superconducting phases, increase effective artificial pinning centers in the GdBCO high-temperature superconducting film, strengthen a magnetic flux pinning effect, improve critical current density and critical thickness of the GdBCO high-temperature superconducting film, and enhance current carrying capacity, so that superconducting performance of the film is enhanced.

The invention discloses a high-temperature-resistant reflow-solderable three-dimensional circuit carrier and a laser-chemical plating manufacturing process, and relates to the technical field of precision manufacturing, the high-temperature-resistant reflow-solderable three-dimensional circuit carrier comprises a three-dimensional carrier base material made of high-temperature-resistant plastic and a circuit layer formed on the surface of the base material; the three-dimensional high-temperature-resistant plastic carrier is used for replacing a traditional plane PCB, and circuits can be directly arranged on curved surfaces, grooves and multi-dimensional structure surfaces of products such as a special-shaped intelligent equipment shell and a three-dimensional sensor base body. High-temperature-resistant base materials such as LCP, PPS, PI and PEEK are screened, and glass fibers can be added for reinforcement according to requirements, so that the deformation quantity of the three-dimensional carrier at the conventional reflow soldering temperature of 180-260 DEG C for 10 seconds is kept to be smaller than or equal to 0.5%, the thermal deformation temperature is larger than or equal to 260 DEG C, carrier deformation caused by reflow soldering high temperature is effectively avoided, and it is ensured that the circuit precision is not affected. Meanwhile, by selecting a surface metal layer suitable for reflow soldering and a surface treatment mode, it is guaranteed that the circuit has better welding performance during reflow soldering.

The invention provides a TBC solar cell back contact electrode, a preparation method thereof and a TBC solar cell, and the preparation method comprises the steps: synchronously completing the laser grooving of an anti-reflection layer and the chemical deposition of a seed layer through laser chemical deposition, and preparing a metallized electrode on the surface of the obtained seed layer to obtain the TBC solar cell back contact electrode. Laser adopted in the laser chemical metal deposition is nanosecond pulse laser. According to the preparation method provided by the invention, the etching of the anti-reflection layer and the in-situ deposition of the seed layer are synchronously completed through laser chemical metal deposition and nanosecond pulse laser, so that the graphical preparation of the grid line region is realized in one step; according to the preparation method, the equipment investment is remarkably reduced, the material utilization rate is improved, pattern alignment can be well achieved, the integrity of the passivation layer is controlled and protected by means of instantaneous energy of laser, and a low-cost, high-precision and low-damage back contact electrode preparation scheme is provided for the TBC solar cell.