44 results about "Laser chemistry" patented technology

Disclosed is a process for fabricating luminescent porous material, the process comprising pre-treating a substrate (e.g. crystalline silicon) with laser radiation (e.g from a Nd:YAG laser) in a predetermined pattern followed by exposing the irradiated substrate to a chemical stain etchant (e.g. HF:HNO3:H2O) to produce a luminescent nanoporous material. Luminescent porous material having a luminescence maximum greater than about 2100 meV may be produced by this method. Such nanoporous materials are useful in optoelectronic and other semiconductor devices.

A method of growing a free-standing structure, such as a fiber, rod, or tube. A laser beam having is focused on a terminal end of the fiber to heat the terminal end, and at least one gaseous precursor is provided into the beam. At least one electrode is located at a distance from the terminal end. The electrode is in electrical communication with the free-standing structure. A potential is applied between the terminal end and the at least one electrode. The applied potential creates a localized high pressure plasma in the vicinity of the terminal end, and generates reactive species from the gaseous precursor, and accelerates reactive species to the terminal end to grow the free-standing structure at an enhanced rate. An apparatus for growing fibers according to the method is also disclosed.

A method of diminishing permanent tissue markings on a person caused by particles in the dermis includes applying ultrasound radiation to the tissue to generate cavitation bubbles and altering the tissue marking particles by collapse of the cavitation bubbles and transferring energy to the particles. The ultrasound radiation in one embodiment may have a frequency of about 15 KHz to 2 MHz and may be pulsed. The process may be repeated at the same location or other locations while resisting undesired, excessive bleeding of the dermis. The permanent tissue markings may be tattoos. The method may be used in conjunction with other methods of removing the permanent tissue markings, which may include laser, chemical agents, and biological agents. Related apparatus is enclosed.

The invention relates to a technique and equipment for rapidly and continuously preparing second-generation high-temperature super-conduction strip materials by virtue of a liquid injection atomization-multielement eutectoid laser chemical vapor deposition method. According to a liquid raw material supply system of the equipment, the problems that accurate, stable and continuous raw material steam cannot be supplied for a long time by virtue of a traditional chemical vapor deposition method, and components of a thin film cannot be accurately controlled in a preparation process of a multielement thin film are solved. Based on the liquid raw material supply system of the equipment, by illuminating the surface of a substrate by virtue of laser, the reaction activation energy among molecules of a gas phase raw material is substantially reduced, and the speed of the chemical reaction is increased. By virtue of a compound roller transmission system of the equipment, long flexible substrate strip materials can be gradually transported to a deposition region of a heating table, so as to rapidly and continuously prepare second-generation high-temperature super-conduction strip material products.

The invention discloses a laser chemical order controllable preparation method of a monocrystalline silicon inverted pyramid suede. The laser chemical order controllable preparation method comprises the following steps of 1 performing laser scanning, tapping and positioning, namely utilizing software to draw a required felting graph (computer aided design (CAD) drawing), performing the scanning and the tapping on the surface of a cleaned silicon wafer through picoseconds laser according to the graph to form a micron-sized inverted-cone-shaped suede with evenly-distributed holes; 2 performing acid washing of the poroid suede, firstly using hydrogen fluoride (HF) to perform the acid washing and then using distilled water to perform the washing; 3 performing acid washing of a poroid suede layer, firstly using the HF to perform acid washing and then using ultrapure water to perform washing; 4 preparing the inverted pyramid suede, namely placing a sample subjected to the acid washing into a prepared alkaline solution to perform heating in water bath so as to prepare the micron-sized inverted pyramid suede. A preparing and mask-removing process is omitted and replaced by a laser scanning and tapping technology, and the size and the shape of a felting region can be customized through the software (CAD). The monocrystalline silicon inverted pyramid suede has excellent reflection-reducing effect on a 400-700nm wave band with intensive solar spectrum photons, and the reflection rate reaches up to 5%.

The invention relates to a line selection ring cavity for a chemical laser device. The device is in a stable ring cavity structure and is sequentially provided with a blazed grating, a plane mirror, a plane mirror, a plano-concave reflector, a Brewster piece, an activating medium area and a Brewster piece, and a zero level zero level output of the blazed grating is provided with the plane mirrors. According to the laser device provided by the invention, the line selection output of the chemical laser device can be realized by using the zero level, primary diffraction vibration and zero diffraction output. A resonant cavity of the laser device is in either a four-mirror rectangular travelling-wave cavity or a four-mirror '8'-shaped annular travelling-wave cavity, therefore, the laser device can more effectively extract active particles in a gain medium area and the output power of the line selection laser can be improved; furthermore, the line selection ring cavity has the characteristics of compact structure, high power, good beam quality, high stability and the like, thereby being extensively applied to the fields of laser physics, laser chemistry, materials processing and the like.

A system and method for determining precisely in-situ the endpoint of halogen-assisted charged particle beam milling of a hole or trench in the backside of the substrate of a flipchip packaged IC. The backside of the IC is mechanically thinned. Optionally, a coarse trench is then milled in the thinned backside of the IC using either laser chemical etching or halogen-assisted charged particle beam milling. A further small trench is milled using a halogen-assisted charged-particle beam (electron or ion beam). The endpoint for milling this small trench is determined precisely by monitoring the power supply leakage current of the IC induced by electron-hole pairs created by the milling process. A precise in-situ endpoint detection signal is generated by modulating the beam at a reference frequency and then amplifying that frequency component in the power supply leakage current with an amplifier, narrow-band amplifier or lock-in amplifier. The precise, in-situ, endpoint signal is processed and displayed for manual or automatic precise in-situ endpoint detection. This approach avoids or minimizes unintentional damage or perturbation of the active diffusion regions in the IC. A range of further operations on the IC can then be performed.

The invention relates to a device and a method for preventing crystallization of deposition gas in laser chemical vapor deposition. The device comprises a deposition gas storage container, a reaction cavity and a pipeline connecting the deposition gas storage container and the reaction cavity and used for conveying the deposition gas, and the pipeline comprises at least two temperature loss areas in the flow direction of the deposition gas. Corresponding to the temperature loss areas, the device is further provided with a temperature maintaining device and a first temperature monitoring device, and the monitoring target temperature of the first temperature monitoring device is in an increasing trend. By means of the device, the deposition gas in the pipeline can be kept in a continuous gasification state, the phenomenon that the deposition gas is solidified and crystallized when meeting cold in the pipeline or on a base plate in the reaction cavity is effectively prevented, the serious problems that the pipeline is blocked or the base plate is scrapped are effectively avoided, and huge economic losses are effectively avoided.

The invention discloses a Ce<3+> doped gadolinium lithium fluoride ultraviolet laser crystal and a preparation method thereof. Ce<3+> rare earth ions are doped into LiGdF4 crystals to generate monocrystals with the chemical formula of LiGd(1-alpha)CealphaF4. The fluoride monocrystals have the characteristics of low growth temperature, uniform distribution of Ce<3+>, small stress, and good calorimetric, mechanical and chemical stability. The preparation method adopts a water and oxygen insulation sealed crucible descent technology and allows raw materials to undergo high temperature fluorination treatment in order to obtain high-quality crystals containing almost no hydroxide ions. The crystals emit strong 300-345nm ultraviolet fluorescence under the excitation of light with the wavelength of 296nm, and can be expected to be applied in the laser medicine field, the material processing field, the laser spectroscopy field, the laser chemistry field and the like.

The invention provides a method for preparing epitaxial graphene by laser heating. The method comprises the following steps: 1) putting a SiC substrate into a deposition cavity of a laser chemical vapor deposition device, and introducing high-purity Ar gas into the cavity to regulate the gas pressure in the cavity to 1000-10000 Pa; (2) starting laser to irradiate the SiC substrate to heat the surface of the substrate to 1500-2000 DEG C at a rate of 400-600 DEG C / s, and continuously irradiating for 1-5 min; and 3) adjusting the laser power to reduce the temperature of the surface of the substrate to 600 DEG C at a rate of 100-200 DEG C / s, and naturally cooling to room temperature to obtain the epitaxial graphene on the surface of the SiC substrate. The method can rapidly prepare the epitaxial graphene with a large growth area, and the prepared epitaxial graphene has the characteristics of high conductivity, controllable layer number and high crystal quality.

The invention discloses a laser chemistry-microwave ceramic preparation method. According to the laser chemistry-microwave ceramic preparation method, the depth of conduction of heat generated by interaction between laser and ceramic into a substrate is reduced, so that the thickness of a recast layer produced due to heat melting and rapid cooling is reduced; a laser beam irradiates a ceramic sample, and the energy density at a focus of the laser beam exceeds a ceramic failure threshold, so that the ceramic at a cutting position is vaporized into ceramic particles; the vaporized ceramic particles are quickly removed by blowing in compressed air so as to avoid affecting subsequent machining. The ceramic prepared by the laser chemistry-microwave ceramic preparation method provided by the invention has the advantages of high specific surface area, high specific surface energy, high activity and easy sintering, so that the ceramic is easily cut; in addition, an adsorbent is used for adsorbing laser energy, so that the cutting efficiency is improved.

The invention is of a grating election rapid tunable laser resonator, involving laser technology, the laser resonator with servo-motor-driven rotary turntable grating and accurate positioning and achieve grating election of the rapid line tunable lasers. The laser resonator cavity of the laser output mirror, grating, grating turntable, the servo motor, servo motor drive modules and control modules and other components, which is part of the output mirror reflection of the transmission type spherical mirror or plane mirror, grating for the plane or spherical reflecting diffraction grating. Total output mirror and a grating optical axis, and the normal and the optical axis grating into the quasi-rectangular. This invention achieved a grating election rapid tuning of the laser output, tuning speed, tuning range, high precision tuning advantages. Apply to pulse CO2 laser pulse CO laser, pulsed HF / DF and other tunable laser pulse laser, laser atmospheric detection, laser chemistry, laser processing, and other fields have a broad application prospects.

The invention discloses a disconnection repair method, a substrate and a display device, belonging to the field of displays. The method includes: forming a conductive polymer precursor film in a broken line area of ​​the conductive line, the broken line area includes at least one pair of conductive points, each pair of conductive points includes two conductive points disconnected from each other, and the conductive polymer precursor film Contacting at least one pair of conductive points; performing light treatment on the conductive polymer precursor film, so that the conductive polymer precursor film between each pair of conductive points undergoes photopolymerization to form a conductive polymer. The conductive polymer precursor film is photopolymerized by light to form a conductive polymer, so that a conductive polymer line is generated between each pair of conductive points, and each pair of conductive points is connected to realize circuit repair without using laser chemistry. Vapor deposition, low repair cost and short repair time, will not affect the performance of pixel units around the disconnected area.

The invention discloses a method for preparing controllable noble metal nanoparticles through femtosecond laser regulation and control electric replacement reaction, and belongs to the field of laser chemistry. The implementation method comprises the following steps that 1, the local free electron density on the surface of monocrystalline silicon is regulated and controlled through cylindrical mirror spatial light-shaped femtosecond laser, periodic amorphous state transformation is generated, and a large-area uniform modified micro-nano structure is efficiently formed; and 2, noble metal ions is reduced by performing galvanic replacement reactions, single crystal silicon and the amorphous silicon which are adjacent can form a positive and negative electrode structure similar to a primary battery, and due to the fact that the amorphous silicon formed through laser induction contains a large number of dangling bonds, the chemical reducibility of the amorphous silicon is higher, the amorphous silicon as a negative electrode loses electrons in the electric replacement reaction, electrons are transferred to the surface of monocrystalline silicon serving as a positive electrode,noble metal nanoparticles are only selectively deposited in an area which is not modified by laser, the large-area precious metal nanoparticles with controllable deposition sites are simply, conveniently and efficiently prepared, and the application performance of the nanoparticles is improved by regulating and controlling the size and distribution density of the nanoparticles.

The invention discloses a preparation method of a high-adhesion super-hydrophobic surface based on a laser chemical composite process, which improves the preparation efficiency. The method includes the following steps: step 10) cleaning the substrate; step 20) laser surface microtexture: using a laser beam to process micro-nano structures on the surface of the alloy substrate, and then ultrasonically cleaning in absolute ethanol; step 30) silane solution infiltration: the step 20) The treated alloy substrate is soaked in a mixed solution of 1H, 1H, 2H, 2H-tetrahydroperfluorooctyltrichlorosilane and ethanol, then taken out and placed in a nitrogen stream to dry, and finally placed in an oven Medium baking; Step 40) Sodium chloride solution soaking: soak the alloy substrate treated in step 30) in a sodium chloride solution, then take it out and clean it with deionized water, and finally place it in a nitrogen stream to dry it to obtain High adhesion superhydrophobic surface.

The invention relates to a line-selecting annular cavity for a chemical laser device. The device adopts a stable annular cavity structure, and along the transmission direction of the laser, it is sequentially provided with a blazed grating, a plane reflector, a plane reflector, a plano-concave reflector, and a Burrue. The Steer plate, the active medium area, and the Brewster plate are provided with a flat reflector at the zero-order diffraction output of the blazed grating. The laser device of the present invention uses a fixed diffraction grating to realize the line selection output of the chemical laser by utilizing the first-order diffraction oscillation and the zero-order diffraction output. The resonant cavity of the laser adopts a four-mirror rectangular traveling wave cavity or a four-mirror "8" ring traveling wave cavity structure, which enables the laser to more effectively extract the active particles in the gain medium region and increase the output power of the line-selected laser. With compact structure, high power, good beam quality and high stability, it can be widely used in laser physics, laser chemistry, material processing and other fields.

The invention relates to a method for quickly preparing an ultrathin ceramic chip. The method comprises the following steps: utilizing a laser chemical vapor deposition technique to take a corresponding metallic organic source as a precursor raw material and deposit a uniform ceramic layer on a specific substrate under an activating effect of laser, and then separating the substrate from the prepared ceramic layer in the manner of ablating or grinding, thereby acquiring a single high-compactness specific ultrathin ceramic chip. The method not only can greatly reduce the sintering temperature of the ceramic chip and is beneficial to reducing energy consumption, but also is simple in posttreatment process, short in production period, lower in cost and huge in application prospect in the aspect of industrial production.

The invention relates to a rotary driving loading structure for a laser chemical combined propeller. The structure comprises a rotary disc, a rotary steering engine and at least two combustion rooms,wherein the rotary steering engine is connected to the rotary disc and is used for driving the rotary disc to rotate; the combustion rooms are hermetically and fixedly connected to the rotary disc, and the rotary disc rotates to drive the combustion rooms to rotate; each of the combustion rooms is provided with a solid propellant; and the combustion rooms are arranged in parallel, and the rotary steering engine is arranged parallel to the combustion rooms. The rotary driving loading structure for the laser chemical combined propeller provided by the invention is small in size and light in weight, and can meet the power demand on micro satellite orbit control.