Method for preparing epitaxial graphene through laser heating

A technology of laser heating and graphene, applied in graphene, chemical instruments and methods, nano-carbon, etc., can solve the problems of etching speed, etching quality, difficult control of etching hydrogen concentration, pressure, and time, etc. Achieve the effect of improving crystal quality and shortening the growth process

Active Publication Date: 2020-04-17
气相科技(武汉)有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is difficult to control the concentration, pressure and time of suitable etching hydrogen, so the etching speed and etching quality are difficult to guarantee

Method used

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  • Method for preparing epitaxial graphene through laser heating
  • Method for preparing epitaxial graphene through laser heating
  • Method for preparing epitaxial graphene through laser heating

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Laser heating to prepare epitaxial graphene, the schematic diagram of the device is shown in figure 1 As shown, the specific steps are as follows:

[0028] 1) Select single crystal 6H-SiC (0001) as the growth substrate, clean it and put it on the stage 7 in the cavity 5 of the laser chemical vapor deposition equipment. The stage 7 is located on the heating furnace 4 and passes through the Ar gas pipeline 1 Introduce high-purity Ar gas into the cavity (flow rate is 500 sccm, purity 99.999%), and then adjust the pressure so that the pressure in the cavity is 10000 Pa (error ± 5%);

[0029] 2) Turn on the laser device 2 (power 1kW), and use the infrared thermometer 3 to test the temperature of the substrate. The laser wavelength is 1000nm, and the temperature of the substrate surface is raised to 1900°C at a heating rate of 400°C / s (the laser power density is 550W cm -2 ), laser irradiation at 1900°C for 1 min;

[0030] 3) Adjust the laser power and keep the wavelength c...

Embodiment 2

[0035] Epitaxial graphene was prepared at different laser heating temperatures, and the specific steps were as follows:

[0036] 1) Select single crystal 4H-SiC (0001) as the growth substrate, clean it and put it into the cavity of laser chemical vapor deposition equipment, and pass high-purity Ar gas into the cavity (flow rate is 500 sccm, purity is 99.999%), Then adjust the pressure so that the pressure in the cavity is 10000Pa (error ± 5%);

[0037] 2) Turn on the laser (power 1kW), use an infrared thermometer to measure the temperature of the substrate, set the laser wavelength to 1064nm, and raise the temperature of the substrate surface to 1550°C, 1620°C, 1700°C and 1780°C at a heating rate of 500°C / s ( The laser power density is 448~538W·cm -2 ), continue laser irradiation for 5 minutes;

[0038] 3) Adjust the laser power and keep the wavelength constant, so that the surface of the substrate is cooled to 600°C at a cooling rate of 200°C / s, then turn off the laser, sto...

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Abstract

The invention provides a method for preparing epitaxial graphene by laser heating. The method comprises the following steps: 1) putting a SiC substrate into a deposition cavity of a laser chemical vapor deposition device, and introducing high-purity Ar gas into the cavity to regulate the gas pressure in the cavity to 1000-10000 Pa; (2) starting laser to irradiate the SiC substrate to heat the surface of the substrate to 1500-2000 DEG C at a rate of 400-600 DEG C / s, and continuously irradiating for 1-5 min; and 3) adjusting the laser power to reduce the temperature of the surface of the substrate to 600 DEG C at a rate of 100-200 DEG C / s, and naturally cooling to room temperature to obtain the epitaxial graphene on the surface of the SiC substrate. The method can rapidly prepare the epitaxial graphene with a large growth area, and the prepared epitaxial graphene has the characteristics of high conductivity, controllable layer number and high crystal quality.

Description

technical field [0001] The invention belongs to the technical field of graphene preparation, in particular to a method for preparing epitaxial graphene by laser heating. Background technique [0002] Graphene is a carbon material with a two-dimensional hexagonal honeycomb structure densely packed by a single layer of carbon atoms. It has excellent mechanical, thermal, optical, electrical and chemical properties due to its unique crystal and electronic band structure. At present, the methods for preparing graphene mainly include: mechanical exfoliation method, liquid phase or gas phase dissociation method, redox method, chemical vapor deposition method, silicon carbide epitaxy method, etc. Among them, the graphene prepared by the first few methods has poor repeatability and controllability, and graphene often contains internal stress. The silicon carbide single crystal pyrolysis method can directly prepare large-area, high-quality epitaxial graphene on the insulator, and the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/188
CPCC01B32/188C01B2204/22C01B2204/04
Inventor 涂溶章嵩张联盟
Owner 气相科技(武汉)有限公司
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