Method for obtaining high-quality X-ray absorption spectrum of thin film sample

An absorption spectrum and X-ray technology, applied in the field of obtaining X-ray absorption spectrum, can solve the problems of unfavorable energy-resolved detectors, temporary blindness of energy-resolved detectors, etc., and achieve the effect of improving accuracy and high feasibility

CN103076352AActive Publication Date: 2013-05-01INST OF HIGH ENERGY PHYSICS CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2013-05-01

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Abstract

The invention discloses a method for obtaining a high-quality X-ray absorption spectrum of a thin film sample. In a measuring process of the thin film sample, after diffraction spots are generated by exposing a single-crystal substrate of the thin film sample through a dry film, exposure points are shielded by a lead sheet to prevent diffraction signals caused by the substrate from entering a detector so as to obtain the high-quality X-ray absorption spectrum of the thin film sample. The dry film consists of carbon, nitrogen, oxygen and a trace element lithium, has an effective atomic number within 6-8 and the film thickness of about 100-200 microns, does not cause a serious background to the hard X-ray absorption spectrum, and particularly can be integrated with a light filter in the detector to filter out a scattering effect caused by incident light and a diffraction effect caused by the substrate of the thin film sample. Therefore, a simple and effective way for obtaining the high-quality X-ray absorption spectrum of the thin film sample is provided.
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Description

technical field

[0001] The invention relates to a method for obtaining the X-ray absorption spectrum, in particular to a method for obtaining the X-ray absorption spectrum of a high-quality film sample. Background technique

[0002] In recent years, Group III nitride semiconductor materials (indium nitride, gallium nitride, aluminum nitride) as superior third-generation semiconductor materials have been widely used in the optoelectronic industry (including white light lighting), high-frequency high-speed devices, high-power devices, radar Technology, ultraviolet detection devices and many other fields have been extensively researched and applied. However, III-nitride semiconductor materials are mostly prepared on heterogeneous substrates. At present, epitaxial growth of high-quality III-nitrides on silicon substrates and sapphire substrates and related doping research has become a new round of upsurge in the comprehensive application research of III-nitrides, and it is also...

Examples

Embodiment 1

[0040] The method for obtaining the X-ray absorption spectrum of a high-quality film sample described in this embodiment specifically includes the following steps:

[0041] 1. Prepare the pre-collection work of the X-ray absorption spectrum detection device in fluorescence mode; the preparation work described here is understood by those skilled in the art, such as device optical path calibration, etc.;

[0042] 2. Without any processing, quickly collect experimental data with conventional operations, and judge whether there are obvious diffraction peaks in the absorption spectrum; if so, go to step 3;

[0043] 3. Move the scanning X-ray energy to the front, place a dry film that matches the size of the probe at the front of the detector, and quickly collect data again;

[0044] 4. After the data collection is over, remove the dry film and observe the diffraction spots on it. Since the detected fluorescence signal diverges at an angle of 4π, all substantial exposure points may ...