Microtube fabrication process
A manufacturing process and a technology for micro-tubes, which are applied in photolithography process exposure devices, patterned surface photolithography processes, and manufacturing microstructure devices, etc., can solve the problem of increased manufacturing costs, high processing costs, and unimproved efficiency. and other problems, to achieve the effect of avoiding projection lithography equipment and electron beam exposure equipment
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Embodiment 1
[0035] The technical solution of this embodiment can be specifically implemented through the following steps:
[0036] Step 1, photolithography
[0037] Spin-coat photoresist AZ5214 on a clean substrate with a thickness of 3 μm; use a mask with a circular array pattern, the circular area is opaque, and the diameter of the circle is 31 m; use a MA6 contact photolithography machine for exposure.
[0038] Step 2, developing
[0039] The substrate exposed in the first step is put into AZ300 developer solution for development, and a photoresist microtube array structure is obtained on the substrate. The developed structure is as figure 2 shown.
[0040] Step 3, etch
[0041] Etching the substrate with the photoresist microtube array structure after development in step 2, for example, using ICP etching, the etching depth is preferably 12 μm, to obtain a silicon microtube array with a height of 12 μm and an external diameter of 3 μm, Such as image 3 shown.
Embodiment 2
[0043] The technical solution of this embodiment can be specifically implemented through the following steps:
[0044] Step 1, photolithography
[0045] Spin-coat AZ5214 photoresist on a clean substrate with a thickness of 12 μm; use a mask with a circular array pattern, the circular area is opaque, and the diameter of the circle is 30 μm; use a MA6 contact photolithography machine for exposure.
[0046] Step 2, developing
[0047] The substrate exposed in the first step is put into RD6 developing solution for development, and the microtube array structure of photoresist is obtained on the substrate.
[0048] Step 3, etch
[0049] Etching the substrate with the photoresist microtube array structure after development in step 2, for example, by ICP etching, the etching depth is preferably 10 μm, to obtain a silicon microtube array with a height of 10 μm and an external diameter of 30 μm, Such as image 3 shown.
[0050] The photoresists in the above embodiments of the prese...
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Abstract
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