Semiconductor device

Abstract

The invention discloses a semiconductor device which comprises a substrate, an isolation structure, an active area, a gate stacking structure, source drain areas and gate side walls, wherein the isolation structure is located inside the substrate, the active area is surrounded by the isolation structure, the gate stacking structure is formed on the active area and comprises a gate insulating layer and a gate conducting layer, the source drain areas are located at two sides of the gate stacking structure and inside the substrate, and the gate side walls are located at two sides of the gate stacking structure. The semiconductor device is characterized in that the gate insulating layer comprises electrostrictive medium material. According to the semiconductor device, the gate insulating layer is made of the electrostrictive medium material, so that leakage current is reduced through large thickness and large dielectric constant when gate voltage is not exerted; when the gate voltage is exerted, the thickness is changed to enhance control by the gate on channels, effects of short channels are improved, and driving capability of the device is enhanced; and therefore, electrical properties of the device are integrally and effectively improved.

Description

Technical field [0001] The present invention relates to a semiconductor device, in particular to a semiconductor device that uses electrostrictive dielectric materials to replace high-K dielectrics in MOS technology. Background technique [0002] As the feature size of CMOS technology continues to shrink, high-k dielectric materials are introduced into the current process to ensure that the thinned gate insulating layer can still provide better electrical insulation, and therefore play an increasingly important role in the CMOS process . [0003] Traditional high-k materials are usually composed of hafnium-based materials, such as HfO 2 , HfSiO 2 and many more. However, these hafnium-based materials still have the following shortcomings: 1) Although their dielectric constant is much higher than that of silicon oxide, it is still not high enough for current CMOS technology, especially for ultramicro devices below 20nm, which is difficult to meet the demand; 2 For small-sized devic...

AI Technical Summary

Problems solved by technology

However, these hafnium-based materials still have the following disadvantages: 1) Although its dielectric constant is greatly improved compared with silicon oxide, it is still not high enough for the current CMOS technology, especially for ultra-micro devices below 20nm, and it is difficult to meet the demand; 2 ) For small-sized devices, the leakage current through the gate insulating layer of high-k material will greatly change the performance of the device, and even make it invalid, so this leakage current can no longer be allowed to exist

[0005] Therefore, for the gate insulating layer made of traditional hafnium-based high-k materials, the existing dielectric materials are difficult to provide a sufficiently high dielectric constant and are prone to leakage under high voltage, small size, or high field strength, which seriously It affects the electrical properties of semiconductor devices, so there is an urgent need for a semiconductor device that can effectively improve electrical properties

Images