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Semiconductor laser emitting from vertical and extended cavity surface used for electric pump

A laser, electric pumping technology, applied in semiconductor lasers, lasers, laser parts and other directions, can solve the problems of high technical difficulty, damage to the active area of ​​the device, non-compliance, etc., achieve high output power, low series resistance, improve The effect of efficiency

Active Publication Date: 2013-05-08
长春中科长光时空光电技术有限公司
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem that the existing vertical extended-cavity surface-emitting laser with an external mirror has a separate resonator, making its assembly and packaging technically more difficult, and does not meet the requirements of the current integrated optical circuit for monolithic integrated light-emitting devices, and Photonic crystal vertical-cavity surface-emitting lasers are only suitable for small-aperture devices, and their single-mode output power is limited to the milliwatt level, and it is very easy to cause damage to the active area of ​​the device during the preparation of photonic crystal defect microcavities. The invention provides an electrically pumped vertical extended cavity surface emitting semiconductor laser

Method used

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  • Semiconductor laser emitting from vertical and extended cavity surface used for electric pump
  • Semiconductor laser emitting from vertical and extended cavity surface used for electric pump

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Embodiment 1

[0033]For the output light with a lasing wavelength of 980nm, the active layer 3 is a continuous laser power supply, the P-type DBR layer 2 is 20 pairs of AlGaAs / GaAs, the first N-type DBR layer 4 is 10 pairs of AlGaAs / GaAs, and the substrate layer 5 is GaAs , the second N-type DBR layer 6 is 20 pairs of AlGaAs / GaAs, the epitaxial anti-reflection layer 7 is a group of AlAs thin films with stepwise changes in Al composition, and a dry method is used on the epitaxial anti-reflection layer 7 and the second N-type DBR layer 6 The photonic crystal defect microcavity structure 8 with a periodic structure is produced by etching technology, the active layer 3 is a periodic InGaAs / GaAsP multi-quantum well structure, including InGaAs quantum wells and GaAsP barriers, and the lower electrode 1 is 10 pairs of Ti / The Au metal thin film, the upper electrode 9 is an AuGeNi / Au thin film, so that a 980nm electrically pumped vertically extended cavity surface-emitting semiconductor laser can be...

Embodiment 2

[0035] The material of the P-type DBR layer 2 in Example 1 is changed to InP / InGaAsP, and the logarithm is changed to 40 pairs. The material of the first N-type DBR layer 4 is changed to InP / InGaAsP, and the logarithm is changed to 20 pairs. The second N-type The material of DBR layer 6 is changed to InP / InGaAsP, the logarithm is changed to 40 pairs, the active layer 3 is changed to a periodic InGaAsP / InP multi-quantum well structure, the material of substrate layer 5 is changed to InP material, the bottom electrode 1, and the epitaxial anti-reflection layer 7. The photonic crystal defect microcavity structure 8 with periodic structure and the upper electrode 9 remain unchanged, so that a 1550nm electrically pumped vertically extended cavity surface-emitting semiconductor laser can be obtained, and a high-power single transverse mode laser output in the 1550nm band can be obtained.

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Abstract

A semiconductor laser emitting from a vertical and extended cavity surface used for an electric pump belongs to the field of the semiconductor laser. The laser comprises a bottom electrode, a P-typed distributed bragg reflector (DBR) layer, an active layer, a first N-typed DBR layer , a substrate layer, a second N-typed DBR layer, an epitaxy anti-reflection layer, a periodic photonic crystal defect microcavity structure and a top electrode. A resonant cavity is composed of the P-typed DBR layer, the active layer and the first N-typed DBR layer. A second resonant cavity is composed of the first N-typed DBR layer, the second N-typed DBR layer and the periodic photonic crystal defect microcavity structure. The semiconductor laser has the advantages that the resonant cavity of the laser is provided with three DBR layers and a mode selection of a single-mode operation can be realized through the preparation of the periodic crystal defect microcavity structure on the outermost DBR layer, and the damage toward the active layer of the device can not be caused. The series resistor can be reduced by adopting the bottom electrode which is composed of a plurality of metal films. The monolithic integration structure is adopted to be configured in the integrated optical circuit system.

Description

technical field [0001] The invention belongs to the field of semiconductor lasers, in particular to an electrically pumped vertically extended cavity surface-emitting semiconductor laser. Background technique [0002] Vertical extended cavity surface emitting semiconductor laser is a new type of semiconductor laser that has appeared in recent years. Based on the vertical cavity surface emitting laser, this kind of laser introduces an additional reflector to form an extended cavity structure, and realizes mode selection by increasing the loss of high-order mode transmission inside the resonator, thereby achieving high-power and high-quality beam output. However, the vertical extended-cavity surface-emitting laser with an external mirror has a separate resonator, making its assembly and packaging more difficult, which does not meet the requirements of the current integrated optical circuit for monolithic integrated light-emitting devices. [0003] Photonic crystals (Photonic ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/125
Inventor 张星宁永强秦莉刘云王立军
Owner 长春中科长光时空光电技术有限公司
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