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Extreme ultraviolet (EUV) light source pollutant collecting device

A light source pollutant and collection device technology, applied in the field of semiconductors, can solve problems such as optical mirror surface pollution, achieve the effects of reducing pollution, reducing absorption, and improving efficiency

Active Publication Date: 2013-05-15
ZHONGKE JINGYUAN ELECTRON LTD
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  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to provide an EUV light source pollutant collection device, which solves the technical problem of metal (such as tin) fragments or vapors polluting the optical mirrors in the EUV light source and lithography machine in the prior art, and reduces the pollution of metal (such as tin) , tin) fragments or vapor absorb EUV light, achieving the technical effect of improving the collection efficiency and service life of the EUV light source

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Embodiment Construction

[0024] The embodiments of the present invention solve the pollution of EUV light source and its connected lithography machine by metal (such as tin) fragments or steam in the prior art by providing a EUV light source pollutant collection device, improve its service life, and reduce pollution at the same time The absorption of EUV light by objects greatly improves the efficiency of EUV light sources.

[0025] In order to better understand the above-mentioned technical solution, the above-mentioned technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0026] Such as figure 1 As shown, the embodiment of the present invention discloses an EUV light source pollutant collection device, which is applied to an EUV light emitting device, and the EUV light emitting device includes: a laser source 1, a vacuum chamber 2, a collector mirror 3, and a nozzle 4, wherein,

[0027] The laser source 1 is used to...

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Abstract

The invention discloses an extreme ultraviolet (EUV) light source pollutant collecting device which is applied in an X-ray device or an EUV light-emitting device. The EUV light-emitting device comprises a laser source, a vacuum chamber, a condenser and a nozzle. The EUV light source pollutant collecting device comprises a collecting cover and a storage device. The collecting cover is arranged in the vacuum chamber and used for collecting pieces of a target material after the target material is stricken by a laser beam, and pollution to an EUV light source and a lithography machine which is connected with the EUV light source is reduced. The storage device is arranged below the vacuum chamber and used for collecting the target material and / or pollutant. The EUV light source pollutant collecting device has the advantages of being capable of reducing the pollution to the EUV light source and the lithography machine which is connected with the EUV light source caused by the pollutant such as the pieces of the target material, prolonging service life, simultaneously reducing absorption of the pollutant to EUV light, and greatly improving efficiency of the EUV light source. The EUV light source pollutant collecting device can recover the target material and recycle the target material, and therefore using efficiency of the target material can be greatly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an EUV light source pollutant collection device. Background technique [0002] As the semiconductor industry has higher and higher requirements for the integration of integrated circuits (IC, Integrated Circuits), traditional visible light or ultraviolet lithography machines can no longer meet the development needs of the industry, and the market needs lithography equipment with better performance to maintain the integrity of the entire industry Rapid development momentum. It is well known that the lithographic resolution is inversely proportional to the numerical aperture of the projection objective and directly proportional to the exposure wavelength. Therefore, in order to improve the resolution of lithography, the next-generation lithography machine will use shorter-wavelength EUV light (also known as soft X-ray, including light with a wavelength around 13.5nm) to rep...

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Application Information

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IPC IPC(8): H05G2/00G03F7/20
Inventor 宗明成孙裕文李世光黄有为
Owner ZHONGKE JINGYUAN ELECTRON LTD
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