A nitride power device and its manufacturing method

Abstract

The present invention provides a nitride power device and a manufacturing method thereof. On the basis of the current devices, in this nitride power device, a semiconductor doped multilayer structure in which n-type silicon layers and p-type silicon layers are arranged in an alternating arrangement is formed on a silicon substrate. When an external voltage is applied to the nitride power device, each layer of the semiconductor doped multilayer structure forms a space charge depletion region. By means of stacking one or more space charge depletion regions, breakdown voltage is greatly increased for the device, thus reducing the risk of the device being broken down by a voltage. The present invention also provides a manufacturing method of the nitride power device.

Description

technical field [0001] The invention belongs to the field of microelectronic technology, and relates to a nitride power device and a method for manufacturing the nitride power device, especially by introducing a semiconductor-doped multilayer that can form a thicker space charge depletion region into a Si substrate The structure can withstand a large external voltage, thereby increasing the breakdown voltage of the device. Background technique [0002] Gallium Nitride (GaN), the third-generation semiconductor material, has become a current research hotspot due to its large band gap, high electron saturation drift velocity, high breakdown field strength, and good thermal conductivity. In terms of electronic devices, gallium nitride materials are more suitable for manufacturing high-temperature, high-frequency, high-voltage and high-power devices than silicon and gallium arsenide, so gallium nitride-based electronic devices have good application prospects. [0003] In the pas...

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Problems solved by technology

[0007] The thickness of the silicon substrate is generally fixed. Excessive thickness will increase the cost, affect the quality of the nitride epitaxial layer on the silicon, and increase the difficulty of the process. Therefore, it is not feasible to increase the pressure resistance of the silicon substrate by increasing the thickness of the substrate.

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