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Method for producing semiconductor components using doping techniques

A semiconductor and technology technology, which is applied in particular to a manufacturing field with selection, can solve the problems of positioning accuracy limitation, doping, etc., and achieve the effect of improving efficiency and effective coefficient

Inactive Publication Date: 2013-05-22
ROBERT BOSCH GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this method, too, the positioning accuracy between the substrate and the mask is limited, so that in the end, in order to achieve a contactable emitter pole, it must be sufficiently wide and have local strong doping

Method used

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  • Method for producing semiconductor components using doping techniques
  • Method for producing semiconductor components using doping techniques

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Embodiment Construction

[0019] One embodiment of the invention is based on screen printed solar cells with selective emitters.

[0020] This is a cell structure in which the surface below the contact metallization is highly doped and the remaining regions are low doped.

[0021] This doping first enables uniform low doping in the tube furnace by gas phase diffusion. These areas, which should remain low doped, are masked in the next step. The unmasked regions are subjected to higher doping by further gas phase diffusion.

[0022] After removal of the mask, a completely planar anti-reflective coating (Antireflexbeschichtung) is formed. The metal coating is then applied to the antireflection coating by screen printing and the electrical connection to the emitter located below the metal coating is produced by sintering.

[0023] The screen printing mask is precisely aligned to the highly doped regions, so that the contact finger pressure can be achieved with high precision.

[0024] In order to justa...

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Abstract

The invention relates to a method for producing semiconductor components using doping techniques, wherein during processing a sequence of layers is created which are to be positioned exactly with respect to each other. According to the invention, a selectively doped structure created in the semiconductor substrate is determined in the position thereof in the substrate using an infrared-sensitive camera device, and the position located in this way is directly or indirectly used to adjust the subsequent processing step.

Description

technical field [0001] The invention relates to a method for the manufacture of semiconductor devices using doping techniques, in which a sequence of layers to be precisely positioned relative to each other is formed during processing, and in particular to a method for the manufacture of emitters with selectivity and for Method for forming a metallized silicon solar cell with contact fingers, in which according to claim 1 or the preamble of claim 4 the emitter region has a locally higher doping concentration underneath the contact fingers. Background technique [0002] Document DE 10 2007 035 068 A1 discloses a method for producing a silicon solar cell with a selective emitter. The method comprises the method steps of forming a planar emitter on the emitter upper surface of the solar cell substrate, applying a Ötzbarriere to the first partial area of ​​the emitter upper surface, The emitter top surface is etched on the second partial area not covered by the etching bars, th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/068H01L31/18H01L21/22H01L21/66
CPCH01L31/1804H01L22/12H01L22/20H01L31/068H01L31/022425Y02E10/547Y02P70/50
Inventor T.维特里希M.维斯J.罗森K.迈尔
Owner ROBERT BOSCH GMBH