Simulation method, simulation program, and semiconductor manufacturing apparatus

A simulation method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, CAD numerical modeling, complex mathematical operations, etc., can solve problems such as sensor deterioration and high emission intensity

Inactive Publication Date: 2013-06-05
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] Although ultraviolet light having a wavelength of 254nm is used for cleaning, there is a problem that if monitoring is directly performed, the sensor immediately deteriorates due to high emission intensity

Method used

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  • Simulation method, simulation program, and semiconductor manufacturing apparatus
  • Simulation method, simulation program, and semiconductor manufacturing apparatus
  • Simulation method, simulation program, and semiconductor manufacturing apparatus

Examples

Experimental program
Comparison scheme
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no. 1 example

[0081] 2. First embodiment (simulation method)

[0082] 3. The second embodiment (simulator)

[0083] 4. The third embodiment (dry etching device)

[0084] 5. Fourth Embodiment (Dry Etching Apparatus)

[0085] 6. Fifth Embodiment (Dry Etching Apparatus and Etching Treatment Method)

[0086] 1. Outline of this disclosure

[0087] First, an outline of the present disclosure will be described before describing specific embodiments.

[0088] According to an embodiment of the present disclosure, the ultraviolet emission spectrum is predicted by performing simulations based on data of the visible emission spectrum without directly monitoring the ultraviolet emission.

[0089] Furthermore, the amount of damage to the film is predicted by performing simulation using the result of prediction of the ultraviolet emission spectrum by the simulation as input information.

[0090] Furthermore, for the purpose of reducing damage due to ultraviolet rays in real time, a semiconductor manu...

no. 6 example

[0368] 2. Sixth embodiment (simulation method)

[0369] 3. The seventh embodiment (simulator)

[0370] 4. Eighth embodiment (dry etching device)

[0371] 5. Ninth Embodiment (Dry Etching Apparatus)

[0372] 6. Tenth Embodiment (Dry Etching Apparatus and Etching Treatment Method)

[0373] 1. Outline of this disclosure

[0374] First, an outline of the present disclosure will be described before describing specific embodiments.

[0375] According to an embodiment of the present disclosure, the ultraviolet emission spectrum is predicted by performing simulations based on data of the visible emission spectrum without directly monitoring the ultraviolet emission.

[0376] Furthermore, the amount of damage to the film was predicted using the result of prediction of the ultraviolet emission spectrum by simulation as input information.

[0377] Furthermore, in order to reduce damage due to ultraviolet rays in real time, a semiconductor manufacturing device on which software based...

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Abstract

The invention disclsoes a simulation method, a simulation program, and a semiconductor manufacturing apparatus. The simulation method is for predicting a damage amount due to ultraviolet rays in manufacturing a semiconductor device. The method includes: calculating particle density by performing simulation based on a differential equation for the particle density; calculating emission intensity at each wavelength in a visible wavelength region based on the calculated particle density; obtaining an electron energy distribution function by comparing the calculated emission intensity at each wavelength in the visible wavelength region with an actually detected emission spectrum in the visible wavelength region with reference to information on emission species and an emission wavelength in a target manufacturing process; predicting an emission spectrum in an ultraviolet wavelength region by using the electron energy distribution function and a reaction cross-sectional area relating to the emission species; and predicting a damage amount due to the ultraviolet rays based on the predicted emission spectrum in the ultraviolet wavelength region.

Description

technical field [0001] The present disclosure relates to a simulation method and a simulation program for predicting the amount of damage due to ultraviolet rays in the manufacture of semiconductor devices. Furthermore, the present disclosure relates to a semiconductor manufacturing apparatus that predicts the amount of damage due to ultraviolet rays and controls process conditions. Background technique [0002] In the manufacture of semiconductor devices, a process using plasma generated by applying a high-frequency bias voltage has been widely used. [0003] In the plasma, particle collisions and interactions with chamber walls occur and, depending on the structure and process conditions of the processing chamber, ions, radicals and light are generated. [0004] Regarding technological development for predicting and controlling damage to a film (crystal defect) caused when the film is irradiated with ions, various techniques have been proposed, such as simulation methods,...

Claims

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Application Information

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IPC IPC(8): G06F17/50H01L21/00
CPCG06F17/13G06F17/5009G06F17/11G06F2217/16G06F2111/10G06F30/20H01J37/32972H01J37/32963G01J1/429H01L21/3065
Inventor 久保井信行辰巳哲也深泽正永
Owner SONY CORP
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