Array substrate and manufacturing method thereof, and X-ray flat panel detector

Abstract

The invention discloses an array substrate and a manufacturing method of the array base plate and an X ray flat plate detector. The invention relates to the technical field of photoelectricity. Stability of a thin film transistor is strengthened. The array substrate comprises a base plate, a grid line layer, a grid insulating layer, a source layer and a data line layer. The grid line layer is formed on the substrate. The grid line layer comprises a grid electrode and a grid line connected with the grid electrode. The grid insulating layer is formed above the grid line layer. The source layer is formed above the insulating layer. The data line layer is formed above the source layer. The data line layer comprises a source electrode, a drain electrode and a data line connected with the source electrode. The data line crosses with the grid line. The source layer comprises a conductor layer and a semiconductor layer. The conductor layer is formed above the grid insulating layer. The conductor layer is packed by the semiconductor layer. The array substrate and a manufacturing method of the array substrate are mainly suitable for the X ray flat plate detector.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to an array substrate, a manufacturing method thereof, and an X-ray flat panel detector. Background technique [0002] At present, the common amorphous silicon X-ray flat panel detector is an X-ray detector with an amorphous silicon photodiode array as the core. The X-ray detector includes an array substrate, which includes a thin film transistor (TFT, Thin Flim Transistor) and a photodiode. Under the irradiation of X-rays, the scintillator layer or phosphor layer of the detector converts X-ray photons into visible light , and then under the action of the photodiode, the visible light is converted into an electrical signal, and the thin film transistor reads the electrical signal and outputs the electrical signal to obtain a display image. Storage and reading, so the performance of thin film transistors is particularly important at this time. [0003] Usually, the channel ...

AI Technical Summary

Problems solved by technology

However, when the active layer is made of semiconductor material, the carrier mobility rate is low, which is not conducive to the conduction of the channel.

In addition, the semiconductor active layer is in contact with the gate insulating layer and forms an interface, and the carriers will be trapped by the interface formed by the semiconductor active layer and the gate insulating layer, and the trapping effect is relatively large, which will reduce the number of carriers and Density, resulting in a relatively large threshold voltage, which in turn makes the stability of thin film transistors relatively weak

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