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Method for forming Damascus copper metal layer

A Damascus copper and metal layer technology, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as damage to the dielectric layer, uneven thickness of the dielectric layer, reduced device performance and stability, etc., to improve the yield rate , Reduce process cost, improve performance and stability

Inactive Publication Date: 2013-06-12
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This technical document does not disclose relevant technical features that can solve the problem that the subsequent grinding process is easy to cause damage to the dielectric layer due to the thinning of the barrier layer. There is also a problem that the performance and stability of the device are reduced due to the uneven thickness of the dielectric layer caused by the grinding process. sexual hazards

Method used

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  • Method for forming Damascus copper metal layer
  • Method for forming Damascus copper metal layer
  • Method for forming Damascus copper metal layer

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Embodiment Construction

[0023] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0024] In the back-stage copper metal layer process, first, after depositing an etch stop layer, a dielectric layer, a hard mask layer and a dielectric anti-reflection layer sequentially from bottom to top on a semiconductor structure substrate, photolithography, etching Etching process, etch back the dielectric anti-reflection layer to the upper surface of the semiconductor structure substrate to form a Damascene trench; wherein, the dielectric anti-reflection layer is completely removed in the etching process.

[0025] Secondly, a barrier layer is deposited to cover the bottom and sidewalls of the above-mentioned Damascene groove, and the barrier layer also covers the upper surface of the remaining hard mask layer; continue to electroplate metal to form a metal layer, so that the metal layer is full of the Damascene groove and Cover the upper su...

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Abstract

The invention relates to the manufacturing field of semiconductor, in particular to a method for forming a Damascus copper metal layer. According to the method, a hard mask layer with high hardness and Young modulus is taken as a stop layer for use in flattening processes such as chemical mechanical grinding, so that the phenomenon of difference among medium layer thicknesses caused by excessive grinding in the flattening processes can be avoided effectively, the performance and the stability of a device are improved, the yield of products is increased, and meanwhile, the process cost is lowered.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a damascene copper metal layer. Background technique [0002] At present, in the technology node of 45nm and below, due to the increasingly high requirements for the back-stage copper metal layer process, the amorphous carbon (amorphous carbon) layer is generally used as the hard mask in the etching process to etch The copper metal layer damascene structure is produced, and after the etching process is completed, the amorphous carbon layer is removed first, and then the barrier layer and the seed copper (Cu seed) filling process are performed; finally, the chemical mechanical polishing process (Chemical Mechanical Polishing) , referred to as CMP) to remove excess copper, and then form copper wiring. [0003] However, as the size of the device is getting lower and lower, the thickness of the barrier layer between the dielectric layer and copper is g...

Claims

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Application Information

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IPC IPC(8): H01L21/768
Inventor 张文广陈玉文
Owner SHANGHAI HUALI MICROELECTRONICS CORP