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Method for preparing cadmium telluride semiconductor thin film by electrochemical deposition

An electrochemical and cadmium telluride technology, which is applied in the field of electrochemical deposition to prepare cadmium telluride semiconductor thin films, can solve the problems of slow deposition rate, slow preparation rate, and increased time consumption, and achieve improved production efficiency, good crystallinity, and low cost. cheap effect

Inactive Publication Date: 2013-06-26
UNIV OF JINAN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] None of the above technologies can realize the continuous growth of cadmium telluride semiconductor film, that is, the film cannot continue to grow after being deposited to a certain thickness, and the film thickness cannot meet the requirements of solar cells, and there are slow preparation rates, low efficiency, and time-consuming, which will increase accordingly. Therefore, there is a common problem of slow deposition rate for the preparation of cadmium telluride semiconductor thin films by electrochemical deposition. Finding a method for preparing cadmium telluride semiconductor thin films by electrochemical deposition has become a very important task before our eyes. question

Method used

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  • Method for preparing cadmium telluride semiconductor thin film by electrochemical deposition

Examples

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Embodiment 1

[0033] A method for preparing a cadmium telluride semiconductor thin film by electrochemical deposition, comprising the following four steps:

[0034] 1) Preparation of CdTe alkaline precursor deposition solution: according to 0.0001 ~ 0.5mol / L tellurium dioxide (TeO 2 ), 0.005 ~ 5mol / L cadmium salt and 0.005 ~ 0.5mol / L complexing agent were put into a large beaker filled with deionized water, and the TeO 2 , cadmium sulfate and complexing agent are all dissolved, adjust the pH to 9.0 with KOH, and set aside;

[0035] 2) Cleaning and treatment of the deposition substrate: ultrasonically clean the required deposition substrate with acetone, absolute ethanol, and deionized water for 15 minutes each, transfer to the rapid retreat treatment, and cool down for later use;

[0036] 3) Electrochemical deposition of CdTe thin film: put the deposition substrate in the alkaline precursor deposition solution prepared in step 1), irradiate with a light source, deposit at a temperature of ...

Embodiment 2

[0040] A method for preparing a cadmium telluride semiconductor thin film by electrochemical deposition, the steps are the same as in Example 1, wherein: step 1) adjust the pH to 9.0, and step 3) under the light of 15mW / cm 2 , deposited at a temperature of 40°C and a cathode potential of -0.8V, and the deposition time was 60min. The cross-sectional view of the prepared cadmium telluride semiconductor thin film is shown in image 3 .

[0041] Figure 4 It is a cross-sectional view of a cadmium telluride semiconductor thin film prepared under the condition of no light, and other preparation methods and parameters are the same as image 3 same.

[0042] from image 3 and Figure 4 It can be seen that the cadmium telluride semiconductor thin film prepared under the condition of light is very thick, very dense and has very good crystallinity.

Embodiment 3

[0044] A method for preparing a cadmium telluride semiconductor thin film by electrochemical deposition, the steps are the same as in Example 2, except that the light in step 3) is 15mW / cm 2 . The cross-sectional view of the prepared cadmium telluride semiconductor thin film is shown in Figure 5 .

[0045] and in Example 2 Figure 4 In comparison, the cadmium telluride semiconductor thin film prepared under the enhanced light intensity in this embodiment is very thick.

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Abstract

The invention belongs to the technical field of thin film coating and particularly relates to a method for preparing a cadmium telluride semiconductor thin film by electrochemical deposition. The technical scheme of the invention is as follows: the method for preparing the cadmium telluride semiconductor thin film by electrochemical deposition comprises the following four steps: 1) preparing a CdTe alkaline precursor deposition solution; 2) washing and treating a deposition substrate; 3) performing electrochemical deposition of a CdTe thin film; and 4) transferring the deposited CdTe thin film into a fast annealing furnace for annealing treatment to obtain a final CdTe semiconductor polycrystalline thin film. The mehtod is characterized in that the electrochemical deposition of the CdTe thin film in the step 3) performs the deposition under the irradiation of a light source. According to the method, a simple and effective energy excitation way is used for improving the preparation efficiency of the cadmium telluride semiconductor thin film through the electrochemical deposition method, continuous growth is realized, a certain deposition thickness is achieved, and the method further has the characteristics of simple process, easiness in operation and low cost.

Description

technical field [0001] The invention belongs to the technical field of thin film coating, in particular to a method for preparing a cadmium telluride semiconductor thin film by electrochemical deposition. Background technique [0002] CdTe is an important II-VI compound semiconductor material with a direct bandgap structure (the direct bandgap of CdTe polycrystalline film at room temperature is 1.45 eV), and can have two conductivity types, n-type and p-type, and the two types of loading The mobility of the carriers is high, and the absorption coefficient is greater than 10 5 cm-1, which closely matches the solar spectrum, is an ideal solar cell material with broad application prospects. [0003] There are many preparation techniques for CdTe polycrystalline thin films, and there are nearly ten kinds of preparation techniques, such as physical vapor deposition, near-space sublimation, vapor transport deposition, sputtering, electrochemical deposition, spray deposition, meta...

Claims

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Application Information

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IPC IPC(8): C25D9/08C30B30/02C30B29/48H01L31/18
CPCY02P70/50
Inventor 武卫兵张征宇陈晓东
Owner UNIV OF JINAN
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