Insulated gate bipolar transistor (IGBT) and producing method thereof

Abstract

The invention discloses an IGBT and a producing method thereof. The IGBT comprises a plurality of P-type columns which divide a drift region into a plurality of units, first N-type layers between the P-type columns form a structure in which P-type thin layers and N-type thin layers are arranged alternately, so that an N-channel metal oxide semiconductor (NMOS) forming an IGBT device is in a super-junction MOS structure; as the super-junction MOS structure enables drift region of the device to be used up easily, the voltage endurance capacity of the drift region and the overall voltage endurance capacity of the device can be improved; and the dosage concentration of the drift region can be improved and the thickness of the drift region can be reduced due to improvement of the voltage endurance capacity of the drift region, so that the conducting resistance of the device can be reduced, the current density of the device can be increased, the on-state resistance and joule heat of the device can be reduced, and the turn-off response speed of the device can be improved.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor integrated circuits, in particular to an insulated gate bipolar transistor, and also relates to a manufacturing method of the insulated gate bipolar transistor. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a voltage-controlled MOS / bipolar composite device, which has the main advantages of both bipolar junction power transistors and power MOSFETs: high input impedance, input Small driving power, small on-resistance, large current capacity, fast switching speed, etc. The IGBT structure is very similar to the VDMOS structure, such as figure 1 As shown, it is a schematic diagram of the structure of the existing IGBT, including: the collector region 102 is composed of a P-type layer formed at the bottom of the silicon substrate, and the collector is drawn from the back of the silicon substrate; the drift region 101 is formed on the The N-type layer in the silico...

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Problems solved by technology

Although increasing the thickness of the drift region 101 can improve the withstand voltage capability of the device, at the same time, the base resistance of the device will be higher, the Joule heat will be larger during the on-state, and the on-state voltage will be larger during operation.

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