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Power fet with a resonant transistor gate

A field effect transistor, gate technology, applied in the field of integration of passive circuit components

Active Publication Date: 2013-06-26
DE ROCHEMONT L PIERRE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Additionally, solder node failures in power management devices are a major cause of device outages due to unscheduled maintenance

Method used

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  • Power fet with a resonant transistor gate
  • Power fet with a resonant transistor gate
  • Power fet with a resonant transistor gate

Examples

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Embodiment Construction

[0067] This application and the serial number 13 / 168,922, the name is the semiconductor carrier with vertical FET power module, the United States application (De Rochemont '922) and the serial filed on June 24, 2011 by De Rochemont The number is 13 / 163,654, and the name is frequency selective dipole antenna. The United States application of DeRochemont (Drochemont '654) filed on June 17, 2011 is jointly heard. The above two applications are combined by reference Here. This application teaches the incorporation of passive components and / or high dielectric density electroceramic components into the transistor gate structure to make the power FET resonate at a desired frequency or a desired frequency range. A similar application (Drosham '922) teaches to fully integrate a high-efficiency, monolithic power management system on a semiconductor carrier to use a resonant three-dimensional grid structure realized by a serpentine coil to adjust high current levels method. Another simi...

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PUM

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Abstract

A semiconductor FET provides a resonant gate and source and drain electrodes, wherein the resonant gate is electromagnetically resonant at one or more predetermined frequencies.

Description

[0001] Reference related application [0002] This application claims the priority of US Provisional Patent Application No. 61 / 375,894 filed on August 23, 2010 entitled "Fully Integrated High Power Silicon Chip Carrier". Technical field [0003] The present invention particularly relates to the integration of passive circuit elements in the elongated gate of a field effect transistor ("FET"), which causes the gate to resonate at a predetermined frequency or desired frequency band to switch the current load through the device. The present invention generally relates to the integration of a resonant transistor gate in a power FET of a fully integrated power management module or as part of a semiconductor carrier for managing data transfer between additional semiconductor chips electrically connected through their surfaces . Background technique [0004] Power FETs have become limiting components in many power management circuits used to regulate voltage and / or current in DC-DC conver...

Claims

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Application Information

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IPC IPC(8): H01L29/66
CPCH01L23/64H01L25/16H01L28/10H01L28/20H01L28/40H01L29/4238H01L29/43H01L29/435H01L29/7395H01L29/78H01L29/7803H01L2223/6627H01L2223/6661H01L2924/0002H01L2924/00G06F1/3203H01L23/642H01L23/645H01L23/5222H01L23/5227H01L23/5228H01L23/528H01L23/66H01L27/0629H01L29/42376H01L29/7831H01L29/0634
Inventor L·皮尔·德罗什蒙
Owner DE ROCHEMONT L PIERRE
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