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Tempering method of crystal bar surface, and crystal bar

A crystal ingot, quenching and tempering technology, applied in the crystal ingot surface quenching and tempering and crystal ingot field, can solve the problem that the annealing furnace cannot be applied to the crystal ingot annealing treatment, and achieve the effect of reducing the hardness and eliminating the damaged layer

Inactive Publication Date: 2013-07-10
KUNSHAN ZHONGCHEN SILICON CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in terms of the existing technology, the current annealing furnaces are designed for thin wafers, because the transfer of heat has different effects on wafers and ingots, for example, heat has different effects on thin wafers and columnar ingots. The deformation phenomenon caused is quite different, that is to say, in the case that the existing annealing furnace cannot be applied to the annealing treatment of crystal rods, it is necessary to provide an effective method for crystal rods (or non-thin plate-shaped workpieces) ) device for annealing

Method used

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  • Tempering method of crystal bar surface, and crystal bar
  • Tempering method of crystal bar surface, and crystal bar
  • Tempering method of crystal bar surface, and crystal bar

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Embodiment Construction

[0034] The present invention mainly provides a method for tempering the surface of crystal ingots, which can modify at least one surface of crystal ingots, especially the surface coated with a connection layer in the subsequent manufacturing process, by means of heat radiation conduction. In addition, the tempering method of the crystal rod surface of the present invention can reduce the phenomenon that the heat conduction in the crystal rod affects the concentration of thermal stress / thermal deformation in the crystal rod. It is worth noting that the "ingot" defined in the present invention can be interpreted broadly, and does not specifically refer to the manufacturer of a certain process, such as using an ingot (Ingot) formed by casting raw polycrystalline silicon, or cutting a crystal ingot. Square (squaring), cutting to form a block-shaped ingot approximately square columnar, or processed crystal ingots obtained by squaring and polishing are all applicable to the present i...

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Abstract

The invention discloses a tempering method of a crystal bar surface. The tempering method comprises the following steps of 1, providing a crystal bar, and covering the crystal bar with a cover, 2, heating the crystal bar to a preset temperature by a heating unit and carrying out heat preservation for a certain time, and 3, carrying out cooling, wherein the cover at least comprises a transparent region so that thermal radiation produced by the heating unit penetrates the transparent region and heats the crystal bar. Through the tempering method, an affected layer on the surface of the crystal bar can be removed.

Description

1. Technical field [0001] A tempering method, especially a tempering device for modifying the surface of crystal rods and crystal rods thereof. 2. Background technology [0002] During the mechanical processing of the ingot, due to the mechanical cutting force received, the damage layer on the surface of the ingot will be generated, and the damage layer is a chaotic and disordered part for the single crystal ingot or polycrystalline ingot; Ground, the wafer will produce residual stress in the wafer due to the cutting force and thermal shock during the diamond wheel grinding process, and the residual stress will cause the surface of the wafer to bulge or sink; this phenomenon will increase the subsequent Difficulties in the processing process, such as cracks on the surface of the silicon wafer due to excessive residual stress during subsequent processing, or poor flatness after processing due to surface protrusions or depressions. [0003] Annealing is a common process techn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/02
Inventor 陈炤彰郑世隆刘建亿陈钰麟黄国维郑守智
Owner KUNSHAN ZHONGCHEN SILICON CO LTD
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