Zirconia insulation structure applied in sapphire single crystal furnace

A sapphire single crystal furnace and zirconia technology, which is applied in the direction of single crystal growth, single crystal growth, and seed crystal remaining in the molten liquid during growth, can solve the problems of difficult temperature field control and easy deformation of molybdenum barrels, and achieve continuous Sensitivity to temperature adjustment, maintaining the temperature in the furnace, and the effect of small thermal conductivity

Active Publication Date: 2016-04-20
HARBIN AURORA OPTOELECTRONICS TECH
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Problems solved by technology

[0004] The purpose of the present invention is to provide a multi-layer molybdenum barrel structure used in the traditional Kyropoulos single crystal furnace. It is difficult to control the temperature field during use, and the molybdenum barrel is easy to deform in a high temperature environment. It is easier to adjust the temperature field and establish Zirconia insulation structure applied in sapphire single crystal furnace with reasonable temperature gradient

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  • Zirconia insulation structure applied in sapphire single crystal furnace
  • Zirconia insulation structure applied in sapphire single crystal furnace
  • Zirconia insulation structure applied in sapphire single crystal furnace

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Embodiment Construction

[0025] The present invention will be described in detail below in conjunction with the accompanying drawings.

[0026] combine Figure 1-4 , the present embodiment is a 3-layer zirconia heat preservation barrel structure, the outer diameter of the heat preservation barrel from inside to outside is D1, D2 and D3 successively, and D1, D2 and D3 are 500mm, 550mm, 600mm respectively. this invention figure 1 It shows that the height of the zirconia insulation barrel is H, and it is composed of four rings of zirconia fiber brick rings with a height of h, and h is 100mm. Figure 2-4 It is the structural diagram of splicing rings of zirconia insulation barrels. The thickness T of the zirconia fiber brick rings is 20mm. It can be seen from the figure that the two adjacent zirconia fiber brick rings in the ring are connected up and down between each zirconia brick. There are matching positioning protrusions and positioning grooves with radii R1 and R2 at each location, R2 is slightly ...

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Abstract

The invention provides a zirconia heat insulation structure applied to a sapphire single crystal furnace. The zirconia heat insulation structure comprises a plurality of different diameters of zirconia heat insulation barrels, wherein each layer of zirconia heat insulation barrel is formed by assembling multiple layers of rings in the height direction, each ring is formed by splicing multiple petals of zirconia fiber brick ring petals, and each zirconia fiber brick ring petal is prepared by using zirconium fiber bricks prepared by sintering of the zirconium fiber. According to the zirconia heat insulation structure, the problems that the temperature field is difficult to control, a molybdenum barrel is easy to deform under a high temperature environment and like of a multilayer molybdenum barrel structure used in the traditional kyropoulos method single crystal furnace are solved, the temperature field is easier to adjust, and a reasonable temperature gradient is built.

Description

(1) Technical field [0001] The invention relates to a heat field structure in a crystal growth furnace, in particular to a heat preservation bucket structure in a single crystal furnace for growing sapphire by a cold-heart shoulder micro-pulling method. (2) Background technology [0002] Sapphire single crystal has excellent optical, mechanical, chemical and electrical properties, and is widely used in many special fields, especially in view of its excellent comprehensive performance, which makes it the best GaN-based blue and white LED semiconductor substrate material. The preparation technology of sapphire single crystal includes flame melting method, pulling method, kyropoulos method, crucible drop method, guided mode method, heat exchange method, etc., among which kyropoulos method has been proved by industrialization to be the most suitable for growing large-sized high-quality sapphire single crystal method. [0003] The prerequisite for growing high-quality sapphire s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B17/00C30B29/20
Inventor 左洪波杨鑫宏张学军丁广博
Owner HARBIN AURORA OPTOELECTRONICS TECH
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