Unlock instant, AI-driven research and patent intelligence for your innovation.

Super-junction Schottky semiconductor device and preparation method thereof

A semiconductor and Schottky potential technology, applied in the field of superjunction Schottky semiconductor devices, can solve the problems of high on-resistance, affecting the reverse breakdown characteristics of devices, etc.

Inactive Publication Date: 2013-07-17
盛况 +1
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional trench Schottky diode has a sudden electric field distribution curve in the drift region, which affects the reverse breakdown characteristics of the device. At the same time, the traditional trench Schottky diode has a high on-resistance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Super-junction Schottky semiconductor device and preparation method thereof
  • Super-junction Schottky semiconductor device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] figure 1 It is a cross-sectional view of a super junction Schottky semiconductor device of the present invention, combined below figure 1 The semiconductor device of the present invention will be described in detail.

[0028] A super-junction Schottky semiconductor device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second conductive semiconductor material 4, located on the substrate layer 1, is a semiconductor silicon material of P conductivity type, and the doping concentration of boron atoms is 1E16 / CM 3 ; The first type of Schot...

Embodiment 2

[0034] figure 2 It is a cross-sectional view of a super junction Schottky semiconductor device of the present invention, combined below figure 2 The semiconductor device of the present invention will be described in detail.

[0035] A super-junction Schottky semiconductor device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material layer 2, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 2E16 / CM 3 ; The first conductive semiconductor material 3, located on the first conductive semiconductor material layer 2, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a super-junction Schottky semiconductor device. When the semiconductor device is connected with a certain reverse bias, a second conductive semiconductor material and a first conductive semiconductor material can form charge compensation so as to form a super-junction stricture, so that the reverse breakdown voltage of the device can be improved. By means of the super-junction structure, the impurity doping concentration in a drifting area can be improved, the forward conductive resistance of the device can be reduced, and the forward conductive feature of the device can be improved. Simultaneously, when the semiconductor device is connected with a certain forward bias, a first-type Schottky barrier junction (supposing the first conductive semiconductor material layer is an N-type semiconductor material) is under a forward bias on state, a second-type Schottky barrier junction (supposing the second conductive semiconductor material layer is a P-type semiconductor material) is under a reverse bias off state, and therefore the device is a conductive device with a single charge carrier during forward on, injection of minority carriers does not exist in the conductive device with the single charge carrier, and the device is provided with a good switching characteristic. The invention further provides a preparation method of the super-junction Schottky semiconductor device.

Description

technical field [0001] The invention relates to a super junction Schottky semiconductor device, and also relates to a preparation method of the super junction Schottky semiconductor device. The semiconductor device of the present invention is a basic structure for manufacturing power rectifying devices. Background technique [0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have disadvantages such as large reverse leakage current and cannot be used in high-voltage environments. [0003] Schottky diodes can be fabricated using a number of different layout techniques, the most common being planar layout. A typical trench-type layout is shown in B J Baliga Patent No. 5,612,5...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/872H01L21/329
Inventor 盛况朱江
Owner 盛况