Photodetectors based on two-dimensional layered atomic crystal materials

Abstract

The invention discloses an optical detector based on two-dimensional stratiform atomic crystal materials. The optical detector comprises a silicon substrate coated with silica, a first graphene conducting layer, a two-dimensional stratiform atomic crystal semiconductor material layer and a second graphene conducting layer are sequentially coated on the silicon substrate coated with the silica in a superposition mode, and the first graphene conducting layer and the second graphene conducting layer respectively form heterogeneous structures with the two-dimensional stratiform atomic crystal semiconductor material layer. One end of the first graphene conducting layer and one end of the second graphene conducting layer are provided with a first electrode layer and a second electrode layer respectively, and the first electrode layer and the second electrode layer have no any overlapping, and the first electrode layer and the second electrode layer are arranged outside an overlapping area of the first graphene conducting layer, the second graphene conducting layer and the two-dimensional stratiform atomic crystal semiconductor material layer at the same time. A passivation layer is respectively arranged above each layer. The optical detector based on the two-dimensional stratiform atomic crystal materials utilizes the two-dimensional stratiform atomic crystal materials, has the operating characteristics that detection spectrum range is wide, response speed is fast and cut-off frequency is high, and has the characteristics that spectral responsivity of a device is high and extraction of a photon-generated carrier is simple.

Description

technical field [0001] The invention belongs to the field of photodetectors, and in particular relates to a photodetector based on a two-dimensional layered atomic crystal material. Background technique [0002] For photodetectors, the detection bandwidth and response speed of photodetectors are important parameters to measure their performance. The spectral range and detection bandwidth of conventional photodetectors based on group IV and III-V semiconductors (such as silicon and gallium arsenide) are limited by their energy bands and carrier transit times, making it difficult to achieve ultrafast broadband absorption The photodetector is not suitable for some applications that have stricter requirements on device performance, such as the field of ultra-fast broadband data transmission. On the other hand, with the improvement of device integration requirements, the device size needs to be continuously reduced, and the traditional device size based on Group IV and III-V sem...

AI Technical Summary

Problems solved by technology

The spectral range and detection bandwidth of conventional photodetectors based on group IV and III-V semiconductors (such as silicon and gallium arsenide) are limited by their energy bands and carrier transit times, making it difficult to achieve ultrafast broadband absorption The optical detector is not suitable for some applications that have stricter requirements on device performance, such as the field of ultra-fast broadband data transmission

On the other hand, as the requirements for device integration increase, the device size needs to be continuously reduced, and the traditional device size based on Group IV and III-V semiconductors is approaching its limit.

[0003] At present, there are also some optical detectors directly constructed of materials represented by graphene, which reflect a unique zero-gap energy band structure and electrical properties of near-ballistic transport. Optical detectors directly constructed of graphene are different from traditional Compared with semiconductor photodetectors, it has the working characteristics of wide detection spectrum range, ultra-fast response speed and high cut-off frequency.

Images