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Large-size graphene stack structure wafer and preparation method thereof

A stacked structure and graphene technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of fragile structures and impractical device production, and achieve the effect of improving performance

Inactive Publication Date: 2015-06-24
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although suspended graphene holds the record for the highest carrier mobility of room temperature semiconductor materials, its fragile structure cannot be practically used for industrial device production

Method used

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  • Large-size graphene stack structure wafer and preparation method thereof
  • Large-size graphene stack structure wafer and preparation method thereof

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Embodiment Construction

[0024] The present invention will be further described below in conjunction with the accompanying drawings.

[0025] Such as figure 1 As shown, the present invention is a large-scale graphene stacked structure wafer, and the wafer structure is as follows from top to bottom: graphene single crystal layer 1, h-BN single crystal layer 2, h-BN buffer layer 3 , and SiO 2 / Si wafer substrate 4 .

[0026] It should be noted that the size of the wafer is 2 inches to 30 inches, the thickness of the graphene single crystal layer 1 is 0.335 to 4 nm, the thickness of the h-BN single crystal layer 2 is 0.6 to 50 nm, and the h- The BN buffer layer 3 has a thickness of 0.1-100 μm.

[0027] The method for preparing above-mentioned large-scale graphene stacked structure wafer, comprises the following steps:

[0028] (1) Preparation of the SiO 2 / Si wafer substrate, where Si wafers are selected and SiO is formed by dry oxidation process 2 film;

[0029] (2) Preparation of polyborazane pr...

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Abstract

The invention discloses a large-size graphene stack structure wafer which is characterized in that a wafer structure comprises a graphene single crystal layer, an h-BN (hexagonal boron nitride) single crystal layer, an h-BN buffer layer and SiO2 / Si wafer substrates from the top down sequentially. The wafer and the preparation method have the benefits that the wafer can be compatible with a production technique of the available silicon substrate semiconductor device sufficiently, and can take full advantage of the characteristic of a hexagonal boron nitride substrate material; growing graphene has a most perfect crystal structure and a carrier transport environment with the weakest scattering; the super-high mobility of carriers in graphene is kept at the utmost; and the performance of a graphene substrate electronic device is improved greatly.

Description

technical field [0001] The invention relates to a wafer preparation process, in particular to a structure of a large-size hexagonal boron nitride-based graphene wafer and a preparation method thereof. Background technique [0002] Graphene is a two-dimensional material with excellent performance formed by carbon atoms in a hexagonal honeycomb lattice. It has ultra-high carrier velocity and mobility, and has great application potential in the fields of microwave and radio frequency circuits. At present, there are three main methods for preparing graphene, namely, mechanical exfoliation, CVD on catalytic metal substrates, and epitaxial growth on SiC substrates. Although the current experimental work on graphene electronic devices is basically based on the mechanical exfoliation method, the mechanical exfoliation method cannot prepare large-area graphene wafers. At present, many companies in the world have been able to prepare 4-inch graphene wafers through the SiC substrate e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/16H01L29/20H01L21/02
Inventor 马中发张鹏吴勇庄奕琪肖郑操赵钰迪郭超冯元博
Owner XIDIAN UNIV
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