44results about How to "Improved lattice structure" patented technology

The invention discloses a multi-element mixed doping and coating modified ternary positive electrode material and a preparation method thereof. According to the lattice structure characteristics of ternary positive electrode materials, two kinds of metal ions with different ionic radii are doped selectively by multi-element mixed doping method. One kind of metal ions with lithium ion radius equalto or close to lithium ion radius can reduce the cation mixing and discharging. The other kind of metal ions with the same or close radius as transition metal ions (Mn4 +, Co3 +) can reduce the polarization and enhance the electrochemical performance. At that same time, a protective layer is coated on the surface of the ternary positive electrode material by a secondary sinter process to prevent the dissolution of transition metal ions on the surface of the ternary positive electrode material, thereby the ternary positive electrode material with excellent rate performance and cycling performance is prepare. The method is simple in process, convenient in operation and good in reproducibility, and is suitable for large-scale industrial production.

The invention relates to a preparation method of an ecological security flocculating agent for effectively removing phosphorus and algae in a eutrophic water body. The preparation method comprises the following steps of preparing materials, uniformly mixing original clay with water to obtain clay suspension, adjusting the basicity to 50-90% by dropping dilute acid into the clay suspension, uniformly mixing aluminium polychlorid powder with water to prepare aluminium polychlorid solution, adjusting the basicity to 50-90% by dropping dilute acid or dilute alkali into the aluminium polychlorid solution, pouring the aluminium polychlorid solution into the clay suspension, standing and curing at 50-80 DEG C to obtain curing solution, drying the curing solution at 50-80 DEG C, and crushing and sieving to obtain the flocculating agent. According to the invention, the removal rate of total phosphorus is 93% or more; the removal rate of CODCr is 53% or more; the removal rate of total nitrogen is also above 3%; the removal rate of water-blooming cyanobacteria is 96% or more; the removal rate of algal toxin MC-LR is 7% or more; and the risk in rapidly releasing algal toxin is not caused.

The invention discloses a method for preparing a graphene radiating fin, comprising the steps: adding graphite oxide to deionized water, adding a dispersing agent, and performing stirring, shaking orultrasonicizing to prepare an aqueous graphene oxide solution; placing a polyimide film in a carbonization furnace, introducing an inert gas, and then performing carbonization treatment; coating the carbonized polyimide film with the aqueous graphene oxide solution to obtain a graphene oxide-polyimide film; placing the graphene oxide-polyimide film in a graphitization furnace, introducing an inertgas, and then performing graphitization treatment; and rolling the the film obtained by the graphitization treatment to obtain a graphene radiating fin. According to the invention, a graphene radiating fin with excellent heat dissipation performance can be prepared by adopting a technology of combining graphene oxide with a carbonized polyimide film, the process is easy to control, and the purityis high.

The invention discloses a large-size graphene stack structure wafer which is characterized in that a wafer structure comprises a graphene single crystal layer, an h-BN (hexagonal boron nitride) single crystal layer, an h-BN buffer layer and SiO2/Si wafer substrates from the top down sequentially. The wafer and the preparation method have the benefits that the wafer can be compatible with a production technique of the available silicon substrate semiconductor device sufficiently, and can take full advantage of the characteristic of a hexagonal boron nitride substrate material; growing graphene has a most perfect crystal structure and a carrier transport environment with the weakest scattering; the super-high mobility of carriers in graphene is kept at the utmost; and the performance of a graphene substrate electronic device is improved greatly.

The invention discloses a preparation method of titanium dioxide hollow nanospheres. The preparation method comprises the following steps: firstly, taking tetraethyl orthosilicate as a silicon sourceand preparing silicon dioxide microspheres by adopting a Stobe method; then cladding the surfaces of the silicon dioxide microspheres with a titanium dioxide precursor; then removing a silicon dioxideinner core by adopting strong alkali corrosion; finally, carrying out calcination and hydrothermal treatment to prepare anatase form titanium dioxide hollow nanospheres. The invention further discloses the titanium dioxide hollow nanospheres prepared by the preparation method provided by the invention. The method disclosed by the invention is simple to operate, low in production cost, small in process pollution, high in product yield, good in repeatability and suitable for large-scale production. A titanium dioxide nano-product prepared by the method has the advantages of high purity, good crystallization, controllable crystal form, fine particle granularity, uniform particles, good monodispersity, small particle size, large specific surface area and high photocatalytic activity.

A method for reducing series resistance for transistors includes forming a conductive gate over and insulated from a semiconductor substrate, forming source and/or drain extension regions within the substrate and adjacent to respective source and/or drain regions, and forming source and/or drain regions within the substrate. The source and/or drain extension regions are formed from a material alloyed with a first dopant and a second dopant, the first dopant configured to increase a lattice structure of the material forming the source and/or drain extension regions.

The present invention relates generally to improved lattice structures that can be used in, for example, blast resistant armor appliqués. In another embodiment, the present invention relates to methods for designing improved lattice structures where the lattice structures are bistable bond lattice structures. In still another embodiment, the present invention relates to lattice structures that employ asymmetric waiting links and unequal lengths of main links.

The invention relates to a selenium and silicate co-doped high-nickel cathode material, and a preparation method and application thereof. The cathode material is a selenium and silicate co-doped modified high-nickel cathode material, and has a chemical formula of LiNixM1-xSea (SiO4) bO2-a-b, wherein M is at least one of Mn, Co or Al, and 0.5 <= x < 1, 0 < a <= 0.05, 0 < b <=0.05. The high-nickel cathode material is doped with low-valence anions by the selenium and silicate so as to improve the lattice structure of the material. The selenium and the silicate have good synergistic effect, can improve the structural stability of the material under high voltage, and obviously improve the electrochemical performance of the high-nickel cathode material. The obtained cathode material has a firstcycle discharge specific capacity greater than or equal to 185mAh/g and a capacity retention rate greater than or equal to 85% after 200 cycles at a 2.5-4.2V voltage window and 0.1C current density, and has a good application prospect.

The invention discloses a method for preparing near-infrared cadmium telluride quantum dots through hydrothermal treatment. The method comprises the following steps: respectively adding a cadmium saltsolution and a sulfydryl ligand into an aqueous solution, and performing uniform mixing so as to obtain a mixed solution, wherein the mole ratio of the sulfydryl ligand to the cadmium salt is (2-4):1; adjusting the pH value of the mixed solution to 9-11, introducing nitrogen for 30 minutes or longer, adding a sodium hydrogen telluride aqueous solution, and performing uniform mixing so as to obtain a cadmium telluride precursor solution, wherein the mole ratio of the cadmium telluride to cadmium ions is (0.1-0.2):1; heating the cadmium telluride precursor solution for 5 minutes, adding a precipitant, performing centrifugation, removing supernate, adding water, and performing secondary dissolution; adding the cadmium salt solution and the sulfydryl ligand into the dissolved cadmium telluride quantum dots, wherein the mole ratio of thiohydracrylic acid to cadmium chloride is (2-4):1; and adjusting the pH value of the mixed solution to 9-11, and performing heating for a certain time, so as to obtain the cadmium telluride quantum dots with near-infrared light emission. By adopting the method disclosed by the invention, near-infrared cadmium telluride quantum dots can be prepared, and the obtained cadmium telluride quantum dots have good lattice structures.

The invention provides a formation method of a semiconductor device. The formation method of a semiconductor device comprises the steps: providing a substrate with isolation structures; forming a gate structure on the surface of part of the substrate between the adjacent isolation structures; forming a groove exposing the side wall of the isolation structure in the substrate at two sides of each gate structure; nitriding the side wall of the exposed isolation structure, and forming an anti-corrosion layer on the surface of the side wall of the isolation structure; after forming the anti-corrosion layer, cleaning the surface of the bottom and the side wall of the groove; and forming a stress layer filling the groove. The formation method of a semiconductor device can prevent cleaning from etching the isolation structure so as to enable the isolation structure to maintain good shape and provide good interface performance for forming the stress layer, and can enable the isolation structure to maintain good electrical isolation performance and can optimize the electrical properties for the formed semiconductor device.

The invention discloses a making process of peanut-flavored sauce capable of being used with a sauce gun. The making process comprises the following steps: through the scientific formula combination,after heating and stirring and mixing uniformly, controlling the cooling speed and temperature through a unique pipeline cooling process and controlling the packaging temperature time, filling the product into a special triangular bag, thereby making the product form a stable lattice structure to obtain the peanut-flavored sauce which is appropriate in softness and hardness, and conveniently usedwith the sauce gun. The product is convenient to use and accurate in use amount control, and standardized control of the product is realized.

A method of forming an electrode and a ferroelectric thin film thereon, includes preparing a substrate; depositing an electrode on the substrate, wherein the electrode is formed of a material taken from the group of materials consisting of iridium and iridium composites; and forming a single-phase, c-axis PGO ferroelectric thin film thereon, wherein the ferroelectric thin film exhibits surface smoothness and uniform thickness. An integrated circuit includes a substrate; an electrode deposited on the substrate, wherein the electrode is formed of a material taken from the group of materials consisting of iridium and iridium composites, wherein the iridium composites are taken from the group of composites consisting of IrO₂, Ir—Ta—O, Ir—Ti—O, Ir—Nb—O, Ir—Al—O, Ir—Hf—O, Ir—V—O, Ir—Zr—O and Ir—O; and a single-phase, c-axis PGO ferroelectric thin film formed on the electrode, wherein the ferroelectric thin film exhibits surface smoothness and uniform thickness.