Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method of cutting sapphire

A sapphire, multi-wire cutting machine technology, applied in stone processing equipment, fine working devices, manufacturing tools, etc., can solve the problems affecting the qualified yield rate of wafers, low cutting rate, deep surface line marks, etc. The effect of industrial mass production conversion, small process adjustment, and improved film yield

Inactive Publication Date: 2013-08-21
CHANGSHA DIAT NEW MATERIAL SCI & TECH
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although the wire saw can be used to cut into pieces, the cutting rate is low, and the surface line marks are deep, which affects the qualified yield of the wafer.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0008] A method for cutting sapphire. First, composite electroplating is used to coat diamond powder with a particle size of 30 to 40 microns on a steel wire with a diameter of 0.16 mm to obtain a diamond wire saw with a diameter of 0.22 mm. Other process parameters of this step The process parameters of the existing method for preparing 0.25mm diamond wire saw are the same. Then use the diamond wire with a diameter of 0.22mm obtained in the previous step to cut sapphire on a multi-wire cutting machine to obtain a sapphire substrate sheet with a thickness of 0.56mm. The table speed is 18mm / h, the new wire is supplied by 10m / single piece, and each section of the wire saw is used 4 times.

[0009] Experiments have shown that the qualified rate of cutting sapphire material is as high as 99.8% by adopting this embodiment. On the other hand, compared with the sapphire substrate sheet of the same thickness conventionally cut with a 0.25mm diamond wire saw, the method of this embodi...

Embodiment 2

[0011] A method for cutting sapphire. First, composite electroplating is used to coat diamond powder with a particle size of 30 to 40 microns on a steel wire with a diameter of 0.15 mm to obtain a diamond wire saw with a diameter of 0.21 mm. Other process parameters of this step The process parameters of the existing method for preparing 0.25mm diamond wire saw are the same. Then use the diamond wire saw with a diameter of 0.21mm obtained in the previous step to cut sapphire on a multi-wire cutting machine. The process conditions are: the roller groove distance is 0.75mm , The tension is 35N, the table speed is 17mm / h, the new wire is supplied at 10m / single piece, and each section of wire saw is used 4 times to obtain a sapphire substrate with a thickness of 0.54mm.

[0012] The experiment shows that, adopting this embodiment to cut the sapphire material, the passing rate of the slices is 99.8%. Compared with the sapphire substrate sheet of the same thickness made by convent...

Embodiment 3

[0014] A method for cutting sapphire. First, composite electroplating is used to coat diamond powder with a particle size of 30 to 40 microns on a steel wire with a diameter of 0.14 mm to obtain a diamond wire saw with a diameter of 0.2 mm. Other process parameters of this step The process parameters of the existing method for preparing 0.25mm diamond wire saw are the same. Then use the diamond wire saw with a diameter of 0.2mm obtained in the previous step to cut sapphire on a multi-wire cutting machine. The process conditions are: the roller groove distance is 0.74 mm, the tension is 35N, the table speed is 16.5mm / h, and the new wire is 10m / Single piece supply, each wire saw is used 4 times to obtain a sapphire substrate piece with a thickness of 0.53mm.

[0015] Experiments show that the qualified rate of cutting sapphire material is 99.2% by adopting this embodiment. Compared with the sapphire substrate sheet of the same thickness made by conventional 0.25mm diamond wire...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

A method of cutting a sapphire comprises the steps of plating a metal wire which is 0.14-0.16mm in diameter with diamond micro-powder to obtain a diamond wire saw with the diameter of 0.2-0.22mm, and cutting the sapphire with a multi-wire cutter by employing the diamond wire saw to obtain a sapphire substrate slice with the thickness of 0.52-0.56mm. With the adoption of the method, the sapphire can be cut by the diamond wire saw with the smaller diameter; in addition, since the wire diameter of the diamond wire saw is reduced, the slice yield can be increased greatly; a thinner chip can be cut easily; the cutting efficiency and the cutting life are not influenced; the process adjustment is little; and industrial mass production conversion is easy to realize.

Description

technical field [0001] The invention relates to a cutting method for high-hardness materials, in particular to a cutting method for sapphire. Background technique [0002] Sapphire is an extremely important basic material for modern industry, especially for microelectronics and optoelectronics industries. Due to the combination of excellent mechanical, optical, electrical and radiation resistance properties, it has been widely used in high temperature and high pressure devices, optical systems, special windows, wear-resistant devices, infrared guidance, missile overall covers, etc. technology field. Sapphire is a high-hardness material with a hardness value second only to diamond, and the method of cutting it into wafers, due to its high hardness, the current method of cutting sapphire at home and abroad is realized by using a diamond wire saw with a diameter specification of 0.25mm. However, although the wire saw can be used to cut into chips, the rate of cutting chips is...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04
Inventor 蒋超
Owner CHANGSHA DIAT NEW MATERIAL SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com