Manufacturing method of IGBT (insulated gate bipolar transistor) device integrated with diode
A manufacturing method and diode technology, which are applied in the field of IGBT device manufacturing, can solve the problems of difficult integration of diodes, and achieve the effects of low manufacturing cost, good yield and simple process steps.
Inactive Publication Date: 2013-08-28
吴宗宪
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Problems solved by technology
[0004] The technical problem to be solved by the present invention is to provide a method for manufacturing an IGBT device integrated with a diode, which is used to solve the problem that the diode is not easily integrated in the IGBT in the prior art
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[0025] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.
[0026] Such as figure 1 As shown, Embodiment 1 of the present invention provides a method for manufacturing an IGBT device integrated with a diode, including:
[0027] Step 1, select an N-type substrate silicon wafer, and selectively implant P-type impurities on the front side of the N-type substrate silicon wafer by photolithography;
[0028] Step 2, when the fabricated IGBT device is a field-stop IGBT device, an N-type field-stop layer is formed on the N-type substrate silicon wafer, and an epitaxial layer is grown on the N-type field-stop layer as an epitaxial drift region;
[0029] Step 3, when the manufactured IGBT device is an NPT-type IGBT device, an epitaxial layer is directly grown on the N-type substrate ...
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The invention relates to a manufacturing method of an IGBT (insulated gate bipolar transistor) device integrated with a diode. The manufacturing method comprises the following steps that 1, an N type substrate silicon wafer is selected, and in addition, P type impurities are selectively filled at the front side of the N type substrate silicon wafer through gelatinizing photoetching; 2, if the IGBT device to be manufactured is a field stop type IGBT device, an N type field stop layer is formed on the N type substrate silicon wafer, and in addition, an epitaxial layer is grown on the N type field stop layer to be used as an epitaxial drift region; 3, if the IGBT device to be manufactured is an NPT (non-punch through) type IGBT device, an epitaxial layer is directly grown on the N type substrate silicon wafer to be used as an epitaxial drift region; 4, the epitaxial drift region in the step 2 or the step 3 is used for manufacturing the front side structure of the required IGBT device; and 5, the back of the N type substrate silicon wafer in the step 1 is thinned and is metalized to form a metal electrode. The manufacturing method has the advantages that the goal of integrating the diode into an IGBT body can be realized through ordinary photoetching and filling equipment, the process steps are simple, the manufacturing cost is low, the qualified rate is good, and the thin sheet photoetching fragment filling risk is avoided.
Description
technical field [0001] The invention relates to the technical field of manufacturing semiconductor devices, in particular to a method for manufacturing an IGBT device integrated with a diode. Background technique [0002] Insulated Gate Bipolar Transistor (Insulated Gate Bipolar Transistor), referred to as IGBT, is a new type of power semiconductor field-controlled self-shutoff power device that has developed rapidly in recent years. It integrates the high-speed performance of power MOSFETs and the low resistance of bipolar devices. High impedance, low power consumption under voltage control, simple control circuit, high voltage resistance, large current capacity and other characteristics, its monomer or module is mainly used in high-power occasions such as UPS, electric welding machine, motor drive, as well as microwave ovens, washing machines, induction cookers, Household low-power appliances for electronic rectifiers and cameras. [0003] IGBT is different from VDMOS in ...
Claims
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IPC IPC(8): H01L21/331H01L29/739
Inventor 吴宗宪
Owner 吴宗宪