A method of manufacturing igbt device with integrated diode
A diode and device technology, applied in the field of semiconductor device fabrication, can solve the problem of difficult integration of diodes, and achieve the effects of easy impurity distribution, good device parameters, good yield and low manufacturing cost
Inactive Publication Date: 2016-08-31
吴宗宪 +2
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Problems solved by technology
[0004] The technical problem to be solved by the present invention is to provide a method for manufacturing an IGBT device integrated with a diode, which is used to solve the problem that the diode is not easily integrated in the IGBT in the prior art
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[0025] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.
[0026] Such as figure 1 As shown, Embodiment 1 of the present invention provides a method for manufacturing an IGBT device integrated with a diode, including:
[0027] Step 1, select N-type doped silicon wafer or epitaxial wafer;
[0028] Step 2, if the IGBT device to be manufactured is a field-stop IGBT device, first form an N-type field-stop layer on the front side of the N-type doped silicon wafer or epitaxial wafer and push the junction, and then on the N-type doped silicon wafer or epitaxial wafer. The front of the epitaxial wafer is selectively implanted with N-type impurities by gluing photolithography;
[0029] Step 3, if the desired IGBT device is an NPT-type IGBT device, selectively implant N-type impuri...
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The invention relates to a method for manufacturing an IGBT device integrated with a diode. The method comprises the steps of (1) selecting an N type adulteration silicon wafer or an epitaxial wafer; (2) for a field stop type IGBT, forming an N type field stop layer on the front surface of the N type adulteration silicon wafer or the epitaxial wafer firstly, carrying out knot pushing, and then injecting N type impurities selectively by means of gluing photoetching; (3) for an NPT type IGBT, injecting the N type impurities directly into the front surface of the N type adulteration silicon wafer or the epitaxial wafer; (4) bonding another silicon wafer onto the front surface of the N type adulteration silicon wafer or the epitaxial wafer by means of silicon-silicon bonding and thinning the back surface of the N type adulteration silicon wafer or the epitaxial wafer to a thickness required by device parameters; (5) manufacturing the front structure of the needed IGBT device on the back surface of the N type adulteration silicon wafer or the epitaxial wafer; (6) thinning and removing the other bonded silicon wafer, injecting P type impurities, and carrying out annealing to enable the P type impurities to be metalized to form a metal electrode. According to the method for manufacturing the IGBT device integrated with the diode, the diode can be arranged in an IGBT body in an integrated mode, the manufacturing procedure is simple, cost is low, and the yield is high.
Description
technical field [0001] The invention relates to the technical field of manufacturing semiconductor devices, in particular to a method for manufacturing an IGBT device integrated with a diode. Background technique [0002] Insulated Gate Bipolar Transistor (Insulated Gate Bipolar Transistor), referred to as IGBT, is a new type of power semiconductor field-controlled self-shutoff power device that has developed rapidly in recent years. It integrates the high-speed performance of power MOSFETs and the low resistance of bipolar devices. High impedance, low power consumption under voltage control, simple control circuit, high voltage resistance, large current capacity and other characteristics, its monomer or module is mainly used in high-power occasions such as UPS, electric welding machine, motor drive, as well as microwave ovens, washing machines, induction cookers, Household low-power appliances for electronic rectifiers and cameras. [0003] IGBT is different from VDMOS in ...
Claims
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IPC IPC(8): H01L21/331H01L29/739
Inventor 吴宗宪周祥瑞
Owner 吴宗宪