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Al-W-O piling structure applied to resistive random access memory

A technology of resistive variable memory and stacked structure, which is applied in static memory, digital memory information, information storage, etc., to achieve the effects of stable performance, low power consumption, and large high-to-low resistance ratio

Inactive Publication Date: 2013-08-28
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

FLASH memory occupies the absolute mainstream of non-volatile memory in today's society, but as the size of microelectronics enters below the nanometer level, a large number of defects appear in traditional FLASH memory

Method used

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  • Al-W-O piling structure applied to resistive random access memory
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Embodiment Construction

[0016] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0017] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation or position indicated by "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. The relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the descrip...

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Abstract

The invention discloses an Al-W-O piling structure applied to a resistive random access memory. The Al-W-O piling structure applied to the resistive random access memory comprises an under-tungsten electrode, a tungsten oxide layer, an aluminum oxide layer and an above-aluminum electrode, wherein the tungsten oxide layer is formed on the under-tungsten electrode, the aluminum oxide layer is formed on the tungsten oxide layer, and the above-aluminum electrode is formed on the aluminum oxide layer. According to the Al-W-O piling structure applied to the resistive random access memory, the different properties of the aluminum and tungsten when the aluminum and the tungsten combine with oxygen ions are taken advantages, the resistive random access memory is stable in performance, low in power consumption and high in ratio of high resistance and low resistance.

Description

technical field [0001] The invention belongs to semiconductor manufacturing technology, and in particular relates to an Al-W-O stacking structure applied to a resistive variable memory. Background technique [0002] With the continuous development of semiconductor technology and the further popularization of electronic equipment in society, especially the popularization of portable electronics such as mobile phones and the development of special electronic equipment such as medical instruments, the size of microelectronics is constantly shrinking. At the same time, the development of audio-visual entertainment and the like leads to the continuous increase of data scale, which in turn leads to the application of memory, especially non-volatile memory, becoming more and more important. FLASH memory occupies the absolute mainstream of non-volatile memory in today's society, but as the size of microelectronics enters below the nanometer level, a large number of defects appear in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G11C13/00
CPCH10N70/24H10N70/028H10N70/8833H10N70/245H10N70/826H10N70/841
Inventor 白越吴明昊吴华强钱鹤
Owner TSINGHUA UNIV