Patterned substrate and manufacturing method thereof

A technology for patterning substrates and manufacturing methods, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as reducing the light extraction efficiency of chips, and achieve the effects of improving light extraction efficiency and reducing losses

Inactive Publication Date: 2013-09-18
HANGZHOU SILAN AZURE
View PDF4 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, when the refractive index of the epitaxial layer is greater than that of the substrate, a lot of light will be emitted f

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Patterned substrate and manufacturing method thereof
  • Patterned substrate and manufacturing method thereof
  • Patterned substrate and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0032] Example one

[0033] A substrate 1 is provided. The substrate 1 includes a flat first structure 2 and a mask layer 3 formed on the first structure 2, and the refractive index of the mask layer 3 is smaller than that of the first structure. The refractive index of structure 2, the material used in the first structure 2 is sapphire, and the mask layer 3 is formed by depositing 70nm-90nm (nanometer) silicon dioxide using a chemical vapor deposition process. Preferably, the chemical The vapor deposition process can use plasma enhanced chemical vapor deposition (PECVD), such as Figure 2a Shown

[0034] Using photolithography and buffered hydrofluoric acid (BOE) processes to etch and remove part of the mask layer 3 to expose the first structure 2 and form a patterned mask layer 3'on the surface of the first structure 2, Get as Figure 2b The graphics shown;

[0035] The parameters of a wet etching process are: temperature=270°C, the mixed acid solution is phosphoric acid: sulfuri...

Example Embodiment

[0036] Example two

[0037] A substrate 1 is provided. The substrate 1 includes a flat first structure 2 and a mask layer 3 formed on the first structure 2, and the refractive index of the mask layer 3 is smaller than that of the first structure. The refractive index of structure 2, the material used in the first structure 2 is sapphire, and the mask layer 3 is formed by depositing 100 nm silicon nitride using a chemical vapor deposition process. Preferably, the chemical vapor deposition process may be Plasma enhanced chemical vapor deposition (PECVD), such as Figure 2a Shown

[0038] Using photolithography and dry etching processes to remove part of the mask layer 3, exposing the first structure 2, and forming a patterned mask layer 3'on the surface of the first structure 2, to obtain Figure 2b The graphics shown;

[0039] Using the wet etching process in the first embodiment, the first structure 2 and the patterned mask layer 3'located thereon are immersed in the mixed acid solu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a manufacturing method of a patterned substrate. The method includes: providing a substrate which comprises a flat first structure and a mask layer formed on the surface of the first structure; using photoetching and etching processes to form patterned mask layers on the surface of the first structure; using the patterned mask layers as masks for wet corrosion to allow the first structure to form multiple patterned structures; wherein the refractive index of the mask layer is smaller than that of the first structure, each patterned structure is located below the corresponding patterned mask, and the first structure, the patterned structures and the patterned mask layers form the patterned substrate. The invention further provides the patterned substrate. By the patterned substrate, loss of light radiating from an epitaxial layer to the substrate can be reduced, and light emitting efficiency can be increased.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic chip manufacturing, in particular to a patterned substrate and a manufacturing method thereof. Background technique [0002] Semiconductor light-emitting diode (LED) is a new type of solid-state cold light source. Its high energy efficiency, long life, small size, low voltage and many other advantages make it widely used in people's daily life, traffic lights, headlights, outdoor displays, mobile phone backlights Sources, electrical indicator lights, and some lighting street lights are widely used in large numbers. Especially in terms of energy saving and environmental protection, LED lamps have obvious advantages over ordinary incandescent lamps and fluorescent lamps, so it has become a consensus to replace traditional light sources as the main lighting source in the future. [0003] At present, most LED epitaxial layer growth technologies use metal-organic chemical vapor deposition (...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L33/00H01L33/10H01L33/20
Inventor 张昊翔封飞飞万远涛李东昇江忠永
Owner HANGZHOU SILAN AZURE
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap