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Patterned substrate and manufacturing method thereof

A technology for patterning substrates and manufacturing methods, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as reducing the light extraction efficiency of chips, and achieve the effects of improving light extraction efficiency and reducing losses

Inactive Publication Date: 2013-09-18
HANGZHOU SILAN AZURE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, when the refractive index of the epitaxial layer is greater than that of the substrate, a lot of light will be emitted from the epitaxial layer into the substrate and absorbed by the substrate, which will reduce the light extraction efficiency of the chip.

Method used

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  • Patterned substrate and manufacturing method thereof
  • Patterned substrate and manufacturing method thereof
  • Patterned substrate and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A substrate 1 is provided, the substrate 1 includes a flat first structure 2 and a mask layer 3 formed on the first structure 2, and the refractive index of the mask layer 3 is smaller than that of the first The refractive index of the structure 2, the material used in the first structure 2 is sapphire, the mask layer 3 is formed by depositing 70nm-90nm (nanometer) silicon dioxide by chemical vapor deposition process, preferably, the chemical The vapor deposition process can use plasma enhanced chemical vapor deposition (PECVD), such as Figure 2a shown;

[0034] Removing part of the mask layer 3 by photolithography and buffered hydrofluoric acid (BOE) process, exposing the first structure 2, forming a patterned mask layer 3' on the surface of the first structure 2, get as Figure 2b the graph shown;

[0035] The parameters of a wet etching process are: temperature = 270°C, the mixed acid solution is phosphoric acid: sulfuric acid = 1:3 (volume ratio), the first stru...

Embodiment 2

[0037] A substrate 1 is provided, the substrate 1 includes a flat first structure 2 and a mask layer 3 formed on the first structure 2, and the refractive index of the mask layer 3 is smaller than that of the first The refractive index of the structure 2, the material used in the first structure 2 is sapphire, and the mask layer 3 is formed by depositing 100nm silicon nitride by a chemical vapor deposition process. Preferably, the chemical vapor deposition process can adopt Plasma Enhanced Chemical Vapor Deposition (PECVD), such as Figure 2a shown;

[0038] A part of the mask layer 3 is removed by photolithography and dry etching process to expose the first structure 2, and a patterned mask layer 3' is formed on the surface of the first structure 2 to obtain the following: Figure 2b the graph shown;

[0039] Using the wet etching process in Embodiment 1, the first structure 2 and the patterned mask layer 3' on it are soaked in the mixed acid solution for a certain period o...

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Abstract

The invention provides a manufacturing method of a patterned substrate. The method includes: providing a substrate which comprises a flat first structure and a mask layer formed on the surface of the first structure; using photoetching and etching processes to form patterned mask layers on the surface of the first structure; using the patterned mask layers as masks for wet corrosion to allow the first structure to form multiple patterned structures; wherein the refractive index of the mask layer is smaller than that of the first structure, each patterned structure is located below the corresponding patterned mask, and the first structure, the patterned structures and the patterned mask layers form the patterned substrate. The invention further provides the patterned substrate. By the patterned substrate, loss of light radiating from an epitaxial layer to the substrate can be reduced, and light emitting efficiency can be increased.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic chip manufacturing, in particular to a patterned substrate and a manufacturing method thereof. Background technique [0002] Semiconductor light-emitting diode (LED) is a new type of solid-state cold light source. Its high energy efficiency, long life, small size, low voltage and many other advantages make it widely used in people's daily life, traffic lights, headlights, outdoor displays, mobile phone backlights Sources, electrical indicator lights, and some lighting street lights are widely used in large numbers. Especially in terms of energy saving and environmental protection, LED lamps have obvious advantages over ordinary incandescent lamps and fluorescent lamps, so it has become a consensus to replace traditional light sources as the main lighting source in the future. [0003] At present, most LED epitaxial layer growth technologies use metal-organic chemical vapor deposition (...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/10H01L33/20
Inventor 张昊翔封飞飞万远涛李东昇江忠永
Owner HANGZHOU SILAN AZURE
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