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Method for laying seed crystal, method for casting quasi-single crystal silicon ingot, and quasi-single crystal silicon wafer

A technology of quasi-single crystal silicon and laying method, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problem of large volume of polycrystalline silicon, and achieve the effect of high cell conversion efficiency and low emissivity

Active Publication Date: 2016-07-06
ZHENJIANG RENDE NEW ENERGY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this laying method can reduce dislocations, polysilicon will grow above the seam, and as it grows upward, the volume of polysilicon will become larger and larger.

Method used

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  • Method for laying seed crystal, method for casting quasi-single crystal silicon ingot, and quasi-single crystal silicon wafer
  • Method for laying seed crystal, method for casting quasi-single crystal silicon ingot, and quasi-single crystal silicon wafer

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Experimental program
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Effect test

Embodiment 1

[0025] Embodiment 1: In this embodiment, there are two seed crystals 2, one of which is a partial seed crystal, and the other seed crystal 2 is a seed crystal with a crystal orientation of . The crystal orientation of the bulk seed crystal 2 is set at a predetermined included angle of a small angle. In this embodiment, the crystal orientation of the biased seed crystal is 1 to the crystal orientation of the seed crystal. The included angle of -12°, the included angle is, for example, figure 2 The angle α shown is, in this embodiment, the range of the angle α is 1-12°; the seed crystal 2 covers 40% or more of the bottom area of ​​the crucible 1 .

Embodiment 2

[0026] Embodiment 2: In this embodiment, the seed crystals 2 are two, and the two seed crystals 2 are partial seed crystals, and the crystal orientations of the two seed crystals 2 form a predetermined clip with a small angle. Angle setting; in this embodiment, the crystal orientation of the biased seed crystal and the crystal orientation form an angle of 1-12°, and the angle is, for example, figure 2 The included angle α is shown, and the crystal orientations of the two seed crystals 2 are arranged at an included angle 2α. In this embodiment, the above-mentioned included angle α is in the range of 1-12°, therefore, the crystal orientations of the two seed crystals 2 form an included angle of 2-24°; the seed crystal 2 covers the crucible 1 The area of ​​40% or more of the bottom.

Embodiment 3

[0027] Embodiment 3: In this embodiment, there are more than two seed crystals 2, wherein the crystal directions of at least one pair of adjacent seed crystals 2 are arranged at a predetermined included angle, and each pair of said seed crystals is arranged at a predetermined included angle. One of the seed crystals 2 is a partial seed crystal, and the other is a partial seed crystal or a seed crystal with a crystal orientation of . In this embodiment, the crystal orientation of the biased seed crystal forms an included angle of 1-12° with the crystal orientation, and the included angle is, for example, figure 2 For the included angle α shown, the rest of the seed crystals 2 are all seed crystals with a crystal orientation of . In this embodiment, the range of the angle α is 1-12°; the seed crystal 2 covers 40% or more of the bottom area of ​​the crucible 1 .

[0028] When adopting the seed crystal laying method provided by the present invention to lay the seed crystal, ...

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Abstract

The invention discloses a seed crystal laying method for casing a mono-like silicon ingot, wherein seed crystals are laid on the bottom of a crucible, and the number of the seed crystals is two or more; when the number of the seed crystals is two, crystal orientations of the two seed crystals form a preset included angle; and when the number of the seed crystals is more than two, the crystal orientations of at least a pair of adjacent seed crystals form the preset included angle. The invention further discloses a method for casting the mono-like silicon ingot, a mono-like silicon ingot wafer cut by the mono-like silicon ingot prepared by the method, and a panel cell. In the seed crystal laying method for casing the mono-like silicon ingot, the crystal orientations of at least a pair of adjacent seed crystals form the included angle, and the method can well prevent generation and multiplication of dislocations at a seaming part between seed crystals for casting the mono-like silicon ingot.

Description

technical field [0001] The invention belongs to the technical field of quasi-single crystal silicon ingot casting, and in particular relates to a method for laying a seed crystal for casting a quasi-single crystal silicon ingot, a method for casting a quasi-single crystal silicon ingot, a quasi-single crystal silicon wafer and a solar cell. Background technique [0002] Energy and environment are two major issues that are widely concerned in the world today. As a renewable green energy, solar energy has become the focus of people's development and research. At present, many countries in the world have set off an upsurge in the development and utilization of solar energy, and solar cell technology has developed rapidly. [0003] According to the different materials used, solar cells can be divided into: 1. Solar cells made of amorphous silicon, polycrystalline silicon and single crystal silicon; 2. Solar cells made of III-V compound semiconductors such as gallium arsenide (Ga...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/06C30B29/06H01L31/036
Inventor 路景刚
Owner ZHENJIANG RENDE NEW ENERGY TECH
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