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A kind of crystalline silicon material containing titanium impurity intermediate zone and its preparation method

An intermediate zone and crystalline silicon technology is applied in the field of crystalline silicon material containing titanium impurity intermediate zone and its preparation. Effect

Active Publication Date: 2016-06-29
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although these two non-equilibrium technologies can increase the doping concentration of deep-level impurity elements in silicon materials, the implantation depth reported so far cannot meet the requirements for making solar cells.

Method used

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  • A kind of crystalline silicon material containing titanium impurity intermediate zone and its preparation method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] The preparation method of the crystalline silicon material containing the intermediate zone of titanium impurities comprises the following steps:

[0024] Step 1, preparing a layer of titanium thin film on the surface of the silicon wafer; the thickness of the titanium thin film is 30nm; the method for preparing a layer of titanium thin film on the surface of the silicon wafer adopts magnetron sputtering.

[0025] Step 2, irradiating the silicon wafer with the titanium film with laser; the conditions of the laser irradiation are: YAG:Nd one-dimensional linear continuous laser, the current of the laser is 20A, and the scan rate is 3mm / s.

[0026] Step 3, performing annealing treatment on the silicon wafer after laser irradiation; the temperature of the annealing treatment is 800° C., and the annealing treatment time may be 10 minutes.

[0027] Step 4, corroding the annealed silicon wafer to obtain titanium impurity intermediate zone crystalline silicon. The etching can ...

Embodiment 2

[0029] Similar to Example 1, the difference is that the thickness of the titanium film is 100nm; the method for preparing a layer of titanium film on the surface of a silicon wafer adopts evaporation coating. The conditions of laser irradiation are as follows: a YAG:Nd one-dimensional linear continuous laser is used, the current of the laser is 25A, and the scanning rate is 8mm / s. The temperature of the annealing treatment is 600° C., and the time of the annealing treatment is 15 minutes. The volume concentration of the hydrofluoric acid solution is 1%.

Embodiment 3

[0031] Similar to Example 1, the difference is that the thickness of the titanium film is 300nm; the method for preparing a layer of titanium film on the surface of a silicon wafer adopts evaporation coating. The conditions of laser irradiation are as follows: a YAG:Nd one-dimensional linear continuous laser is used, the current of the laser is 30A, and the scanning rate is 10mm / s. The temperature of the annealing treatment is 1000° C., and the time of the annealing treatment is 3 minutes. The volume concentration of the hydrofluoric acid solution is 20%.

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Abstract

The invention relates to a crystalline silicon material, and concretely relates to a crystalline silicon material containing a titanium impurity intermediate band, and a preparation method thereof. The a crystalline silicon material containing a titanium impurity intermediate band comprises a silicon layer and an intermediate band layer positioned on the upper surface of the silicon layer, the intermediate band layer has a depth of 0.2-1.0mum, an injection concentration of 6*10<19>-1*10<22>cm<-3>, a wavelength range of 1-3mum and an infrared light absorption coefficient exceeding 1*10<4>-1*10<5>cm<-1>, and the minor carrier lifetime of the intermediate band layer is 5-20 times that of the silicon layer. The preparation method comprises the following steps: preparing a titanium film on the surface of a silicon chip; carrying out laser irradiation of the silicon chip having the titanium film; annealing the laser-irradiated silicon chip; and corroding the annealed silicon chip to prepare the crystalline silicon material containing the titanium impurity intermediate band. The titanium injection concentration exceeds a Mott transition concentration, so the impurity intermediate band is formed. The crystalline silicon material containing the titanium impurity intermediate band can be used for making highly-sensitive infrared detectors.

Description

technical field [0001] The invention relates to a crystalline silicon material, in particular to a crystalline silicon material containing a titanium impurity middle zone and a preparation method thereof. Background technique [0002] In the 21st century, energy shortage and environmental pollution have become urgent problems that hinder the sustainable development of human beings in the future. Solar photovoltaic power generation technology is gradually entering the human energy structure and will become an important part of the future basic energy. Since silicon materials have the advantages of abundant raw materials, good performance, and no pollution during use, silicon materials and crystalline silicon solar cells will still be the mainstream of photovoltaic power generation in the foreseeable future. [0003] The theoretical maximum photoelectric conversion efficiency of silicon-based solar cells widely used at present is only 29%, because crystalline silicon solar ce...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/06H01L31/0288
Inventor 陈朝范宝殿蔡丽晗陈蓉
Owner XIAMEN UNIV