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Preparation method of codoped silicon-base impurity intermediate belt material

An intermediate band, co-doping technology, applied in diffusion/doping, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve the problem of high cost of laser annealing technology, achieve low preparation cost and increase open circuit current. Effect

Inactive Publication Date: 2012-09-19
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although these two non-equilibrium combination technologies can increase the doping concentration of deep-level impurity elements in silicon materials, their large-scale application is limited due to the high cost of laser annealing technology and the disadvantage that it can only be applied to small-scale sample processing. possibility of

Method used

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  • Preparation method of codoped silicon-base impurity intermediate belt material
  • Preparation method of codoped silicon-base impurity intermediate belt material
  • Preparation method of codoped silicon-base impurity intermediate belt material

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preparation example Construction

[0024] see figure 1 As shown, the present invention provides a kind of preparation method of co-doped silicon-based impurity intermediate band material, comprising the steps of:

[0025] Step 1: Take a silicon wafer, and the silicon wafer is only required to meet the specifications of silicon wafers used in ordinary experiments. There are no special requirements for silicon wafer thickness, resistivity, crystal orientation and other related parameters. The silicon wafers are acid cleaned to remove heavy ions and other impurity elements from the surface.

[0026] Step 2: Using ion implantation, implant Al into the silicon wafer with an implant dose of 2×10 15 cm -2 , the implanted energy is 30ev, so that the concentration of Al in the silicon wafer reaches 3.4×10 20 cm -3 .

[0027] Step 3: Implant a transition metal element into the Al-containing silicon wafer. The transition metal element can be Ti or Cr. Taking Ti doping as an example, ion implantation is adopted. The ...

Embodiment

[0032] combined reference figure 1 , the invention provides a method for preparing a co-doped silicon-based impurity intermediate band material, comprising the steps of:

[0033] Step 1: Use a (100) n-type silicon wafer, boil the silicon wafer with concentrated sulfuric acid for 5 minutes, and then rinse it with hydrofluoric acid for 30 seconds.

[0034] Step 2: Implant Al into the silicon wafer with an implant dose of 2×10 15 cm -2 , the injected energy is 30eV.

[0035] Step 3: Implant Ti ions into the Al-containing silicon wafer, the implantation energy is 45ev, and the implantation dose is 1.7×10 15 cm -2 .

[0036] Step 4: annealing the silicon wafer containing Al and Ti ions at a temperature of 850° C. and an annealing time of 15 s.

[0037] Finally, a co-doped silicon-based impurity intermediate band material is formed in the surface layer of silicon.

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Abstract

The invention relates to a preparation method of a codoped silicon-base impurity intermediate belt material, which comprises the following steps: 1. taking a silicon wafer; 2. implanting Al into the silicon wafer; 3. implanting a transitional metal element into the silicon wafer containing Al; and 4. carrying out annealing treatment on the silicon wafer containing Al and transitional metal element, thereby preparing the codoped silicon-base impurity intermediate belt material.

Description

technical field [0001] The invention relates to new energy photovoltaic technology, in particular to a method for preparing a co-doped silicon-based impurity intermediate band material. Background technique [0002] Solar cells are the most effective and extensive way to utilize solar energy. Low cost and high efficiency have always been the driving force and goal of the development of solar cell technology. Both the first-generation solar cells represented by monocrystalline silicon and the second-generation solar cells represented by amorphous silicon thin films cannot meet the requirements of high efficiency and low cost at the same time. The third-generation solar cells, represented by tandem solar cells and intermediate solar cells, have well resolved the conflict between high efficiency and cost. [0003] The silicon-based impurity intermediate zone solar cells formed by the deep-level impurity doping technology can not only realize the absorption and utilization of t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/265C30B31/22
Inventor 马志华左玉华薛春来成步文王启明郑世雄
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI