A new type of heterojunction solar cell
A solar cell and heterojunction technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of expensive manufacturing equipment, high cost, and thick N-type crystalline silicon substrates
Active Publication Date: 2015-09-09
TRINA SOLAR CO LTD
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But its disadvantage is that the cost is high, and the high cost comes from the thicker N-type crystalline silicon substrate and expensive manufacturing equipment
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[0017] In order to make the content of the present invention easier to understand clearly, the present invention will be described in further detail below according to specific embodiments in conjunction with the accompanying drawings,
[0018] Such as figure 1 As shown, a new type of heterojunction solar cell, which includes a P-type single crystal silicon substrate, an ohmic contact layer, a superlattice structure P+ layer, a lightly doped P-type layer, a passivation layer, a superlattice structure N type layer, transparent conductive film layer and electrode layer, the P-type single crystal silicon substrate has a front and a back; the ohmic contact layer is located on the back of the P-type single crystal silicon substrate; the superlattice structure P+ layer includes at least two layers The P+ composite layer deposited together, the P+ composite layer includes a P+ narrow bandgap layer and a P+ wide bandgap layer from bottom to top, the forbidden band width of the P+ narr...
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The invention discloses a novel heterojunction solar cell. A superlattice structure P+ layer comprises at least two P+ composite layers which are deposited together. Each P+ composite layer comprises a P+ low energy gap layer and a P+ large energy gap layer in sequence from bottom to top. The P+ large energy gap layer in each P+ composite layer is deposited on the upper surface of the P+ low energy gap layer. The P+ low energy gap layer of the lowermost P+ composite layer is deposited on the obverse side of a p-type monocrystalline silicon substrate. A shallow doped p-type layer is deposited on the upper surface of the P+ large energy gap layer of the uppermost P+ composite layer. A superlattice structure N-type layer comprises at least two N-type composite layers which are deposited together. Each N-type composite layer comprises an N-type large energy gap layer and an N-type low energy gap layer in sequence from bottom to top. The N-type low energy gap layer in each N-type composite layer is deposited on the upper surface of the N-type large energy gap layer. The N-type large energy gap layer of the lowermost N-type composite layer is deposited on the upper surface of a passivation layer. The novel heterojunction solar cell not only can increase the open-circuit voltage and the filling factor so as to improve the conversion efficiency, but also can effectively lower cost.
Description
technical field [0001] The invention relates to a novel heterojunction solar cell, which belongs to the technical field of thin film solar cells. Background technique [0002] At present, heterojunction solar cells have attracted more and more attention due to their high efficiency, relatively simple preparation process, and small temperature coefficient. The typical one is Sanyo's HIT battery. Its latest reported results show that at 100cm 2 The highest efficiency on the battery area is 24.7%, the open circuit voltage is 750mV, the fill factor is 83.2%, and the short circuit current density is 39.5mA / cm 2 . Such a high efficiency, especially the high opening voltage, is determined by the energy band structure of the HIT battery. But its disadvantage is that the cost is high, and the high cost comes from a thicker N-type crystalline silicon substrate and expensive manufacturing equipment. Contents of the invention [0003] The technical problem to be solved by the pr...
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IPC IPC(8): H01L31/072H01L31/028H01L31/0392
CPCY02E10/50Y02E10/547
Inventor 崔艳峰袁声召
Owner TRINA SOLAR CO LTD