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Group 2 imidazolate formulations for direct liquid injection

A metal, imidazole root technology, applied in the field of imidazole group 2 metal preparations for direct liquid injection, can solve problems such as no thermal stability

Inactive Publication Date: 2013-10-23
AIR PROD & CHEM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, even if monomeric or dimeric structures are available, these structures still may not have the thermal stability needed to withstand the high sublimation or distillation temperatures required to vaporize them and when adsorbed as a monolayer in an ALD process. maintain its thermal stability

Method used

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  • Group 2 imidazolate formulations for direct liquid injection
  • Group 2 imidazolate formulations for direct liquid injection
  • Group 2 imidazolate formulations for direct liquid injection

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[1122] Example 1: Bis(2,4,5-tri-tert-butylimidazolate) (tetrahydrofuran) strontium

[1123] 2.79 g (0.0025 moles) of distrontium tetrakis(2,4,5-tri-tert-butylimidazolate) were stirred in 50 milliliters (mL) of dry hexane under a nitrogen atmosphere. Tetrahydrofuran was then added in an amount of 0.36 g (0.005 mol) over 5 minutes, causing the strontium complex to slowly dissolve. The resulting solution was stirred overnight and then the hexane was removed by vacuum. The yield was 2.8 g. The structure of the final product was determined by X-ray crystallography and is shown in figure 1 , it was found to be of the type of Equation 2. 1 H NMR: (500MHz, D8 toluene): δ = 1.34 (m, 4H), δ = 1.41 (s, 18H), δ = 1.57 (s, 36H), δ = 3.96 (m, 4H).

Embodiment 2

[1124] Example 2: Bis(2,4,5-tri-tert-butylimidazolate)(3-methyltetrahydrofuran) strontium

[1125] 2.79 g (0.0025 moles) of distrontium tetrakis(2,4,5-tri-tert-butylimidazolate) were stirred in 50 milliliters (mL) of dry hexane under a nitrogen atmosphere. Then 0.50 mL (0.005 mol) of 3-methyltetrahydrofuran was added and the mixture was stirred overnight. The hexane was then removed by vacuum to give a white solid. The structure of the final product was determined by X-ray crystallography and is shown in figure 2 , it was found to be of the type of Equation 2. Yield: 2.74g, 85%. 1 H NMR: (500MHz, D8 toluene): δ=0.72(d, 3H), δ=1.43(s, 18H), δ=1.53(m, 1H), δ=1.58(s, 36H), δ=1.87( m, 2H), δ=3.25(t, 1H), δ=4.0035(m, 2H), δ=4.3456(t, 1H).

Embodiment 3

[1126] Example 3: Bis(2,4,5-tri-tert-butylimidazolate)(2,5-dihydrofuran) strontium

[1127]2.79 g (0.0025 moles) of distrontium tetrakis(2,4,5-tri-tert-butylimidazolate) were stirred in 50 milliliters (mL) of dry hexane under a nitrogen atmosphere. Then 0.35 g (0.005 mol) of 2,5-dihydrofuran were added and the mixture was stirred overnight. The hexane was then removed by vacuum to give a white solid. The structure of the final product was determined by X-ray crystallography and is shown in image 3 , it was found to be of the type of Equation 2. 1 H NMR: (500 MHz, D8 toluene): δ = 1.43 (s, 18H), δ = 1.56 (s, 36H), δ = 4.47 (s, 4H), δ = 5.24 (s, 2H). Yield = 2.51 g, 81%. TGA: 8.09% residual mass.

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Abstract

A composition comprising group 2 imidazolate compounds which are coordinated to suitable neutral donor ligand molecules to provide group 2 metal complexes that are highly soluble in hydrocarbon solvents. In one embodiment, the composition is used for the direct liquid injection delivery of the group 2 precursor to the chamber of an ALD or CVD chamber for the deposition of group 2 containing thin films such as, for example, STO and BST films.

Description

[0001] Cross References to Related Applications [0002] This patent application claims the benefit of priority to US Provisional Application No. 60 / 618,019, filed March 30, 2012. Background technique [0003] The semiconductor manufacturing industry continues to use volatile metal-containing precursors as vapor deposition processes (including Precursor source for chemical vapor deposition (CVD) and atomic layer deposition (ALD). [0004] Precursors containing Group 2 metals of the periodic table (e.g., beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba) and radium (Ra) are sought in semiconductors. For example, containing Precursors of barium and strontium are particularly desirable for depositing thin films of barium and strontium-containing oxides, such as strontium titanate (STO) and barium strontium titanate (BST) for advanced memory device fabrication. Strontium precursors Also available for SrBi 2 Ta 2 o 9 Thin film deposition of ferroelectri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/40
CPCC23C16/45553B05D5/12C23C16/34H01L21/0228H01L21/02197C07F3/003H01L21/02271C07F3/02C23C16/409C09D5/24C23C16/18C07F3/04H01L21/288C23C16/30H01L21/20H01L21/0262
Inventor J·A·T·诺曼M·K·佩雷斯
Owner AIR PROD & CHEM INC