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Method for growing aluminium nitride monocrystal by using physical vapor transport method

A physical vapor transport, aluminum nitride technology, applied in chemical instruments and methods, single crystal growth, crystal growth and other directions, can solve problems such as the inability to obtain large-sized single crystals

Inactive Publication Date: 2013-10-23
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As the temperature rises further, the temperature of the entire growth system reaches the preset growth temperature (generally, the temperature of the AlN raw material area should reach 2100-2300°C, and the temperature of the seed crystal area is about 50°C lower than that of the raw material area), and the AlN crystal begins to grow. growth, but due to secondary nucleation, the grown AlN crystals are usually polycrystalline, and large-sized single crystals cannot be obtained

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  • Method for growing aluminium nitride monocrystal by using physical vapor transport method
  • Method for growing aluminium nitride monocrystal by using physical vapor transport method
  • Method for growing aluminium nitride monocrystal by using physical vapor transport method

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Embodiment 1

[0033] This embodiment provides a method for growing an aluminum nitride single crystal by using the physical vapor transport method, which includes the following steps:

[0034] 1) Heat the raw material area and the aluminum nitride seed crystal in the equipment for growing aluminum nitride single crystal by the physical vapor transport method, and raise the temperature at a rate of 4°C / min, and keep the temperature of the raw material area and the seed crystal at the same temperature during the heating process , heating up to 2100°C;

[0035] 2) Keep the temperature of the raw material area at 2100°C, and lower the temperature of the seed crystal to 2050°C, at this time, due to the existence of the temperature gradient, the aluminum nitride single crystal begins to grow on the seed crystal;

[0036] 3) heat preservation, keeping the temperature of the raw material area at 2100°C and the temperature of the seed crystal at 2050°C for 6 hours;

[0037] 4) cooling, and taking o...

Embodiment 2

[0041] This embodiment provides a method for growing an aluminum nitride single crystal using a physical vapor transport method, including:

[0042] 1) Heat the raw material area and the aluminum nitride seed crystal in the equipment for growing aluminum nitride single crystal by the physical vapor transport method, and raise the temperature at a rate of 4°C / min, and keep the temperature of the raw material area and the seed crystal at the same temperature during the heating process , heating up to 2300°C;

[0043] 2) Keep the temperature of the raw material area at 2300°C, and lower the temperature of the seed crystal to 2250°C, at this time, due to the existence of the temperature gradient, the aluminum nitride single crystal begins to grow on the seed crystal;

[0044] 3) heat preservation, keeping the temperature of the raw material area at 2300°C and the temperature of the seed crystal at 2250°C for 6 hours;

[0045] 4) cooling, and taking out the grown aluminum nitride ...

Embodiment 3

[0048] This embodiment provides a method for growing an aluminum nitride single crystal using a physical vapor transport method, including:

[0049] 1) Heat the raw material area and the aluminum nitride seed crystal in the equipment for growing aluminum nitride single crystal by the physical vapor transport method, and raise the temperature at a rate of 4°C / min, and keep the temperature of the raw material area and the seed crystal at the same temperature during the heating process , heating up to 2050°C;

[0050] 2) Keep the temperature of the seed crystal at 2050°C, and increase the temperature of the raw material area to 2100°C, at this time, due to the existence of the temperature gradient, the aluminum nitride single crystal begins to grow on the seed crystal;

[0051] 3) heat preservation, keeping the temperature of the raw material area at 2100°C and the temperature of the seed crystal at 2050°C for 6 hours;

[0052] 4) cooling, and taking out the grown aluminum nitri...

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Abstract

The invention provides a method for growing aluminium nitride monocrystal by using a physical vapor transport method. The method for growing the aluminium nitride monocrystal comprises the following steps of heating a raw material area and aluminium nitride seed crystal, wherein the raw material area is heated to a growth temperature, and before the raw material area is heated to the growth temperature and is at least heated to be over 1650 DEG C, the temperature of the seed crystal is kept to be higher than the temperature of the raw material area; and adjusting at least one of the temperature of the raw material area and the aluminium nitride seed crystal to form a temperature gradient between the raw material area and the aluminium nitride seed crystal, so as to carry out the growth of the aluminium nitride seed crystal.

Description

technical field [0001] The invention relates to a method for growing aluminum nitride (AlN) single crystal by using a physical vapor transport method. Background technique [0002] As one of the important third-generation wide bandgap semiconductors, aluminum nitride has excellent properties such as direct wide bandgap (6.2ev), high thermal conductivity, high thermal stability and low dielectric constant (8.6), which makes aluminum nitride in High-temperature, high-power, high-frequency devices and short-wavelength light-emitting diodes have great application prospects. Aluminum nitride has a negative electron affinity (-0.6ev), which is an ideal material for field emission devices. Due to its high surface acoustic wave velocity and high piezoelectricity, aluminum nitride is also widely used in the field of surface acoustic wave devices. In addition, aluminum nitride can form a continuous solid solution with other III-V nitrides GaN, InN, and its light emission can change ...

Claims

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Application Information

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IPC IPC(8): C30B23/00C30B29/38
Inventor 王文军左思斌陈小龙王军姜良宝鲍慧强
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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