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Improved kyropoulos method for sapphire crystal growth

A sapphire crystal and crystal growth furnace technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as large thermal stress, low utilization rate of raw material alumina, and large defective sapphire crystal front end. The effect of small thermal stress and high utilization rate

Inactive Publication Date: 2013-03-20
浙江东海蓝玉光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to provide a sapphire crystal front end in order to solve the defect that the existing sapphire crystal top crystal neck part is relatively large, which causes the thermal stress of the sapphire crystal front end to be large and the utilization rate of the raw material alumina is not high. Modified Kyropoulos method for sapphire growth with less thermal stress and higher alumina utilization

Method used

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  • Improved kyropoulos method for sapphire crystal growth

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Embodiment 1

[0036] A kind of improved Kyropoulos method of sapphire crystal growth, described improved Kyropoulos method comprises the following steps:

[0037] a) Prepare raw materials: put 20kg of accumulated alumina with a purity of 99.996% into a crucible, and place the crucible in a crystal growth furnace; among them, the particle density in the accumulated state is 3g / cm3, and the bulk density is 2g / cm3 cm3;

[0038] b) Vacuumize the furnace body: vacuumize the crystal growth furnace, the vacuum degree is 1×10 -3 pa;

[0039] c) Furnace body heating: Electric heating is used to heat the temperature to 2100°C;

[0040] d) Welding seed crystal: After the alumina is melted into a melt, the single crystal seed crystal of the A direction is selected to contact the surface of the melt for seeding;

[0041] e) Neck growth: when the diameter of the single crystal seed is reduced to 4 mm, the seed rod is pulled up at a speed of 0.05 mm / h and rotated at a speed of 0.1 rpm, while cooling at...

Embodiment 2

[0048] A kind of improved Kyropoulos method of sapphire crystal growth, described improved Kyropoulos method comprises the following steps:

[0049] a) Prepare raw materials: put 36kg of piled alumina with a purity of 99.999% into a crucible, and place the crucible in a crystal growth furnace; the density of the piled particles is 3.5g / cm3, and the bulk density is 3g / cm3;

[0050] b) Vacuumize the furnace body: vacuumize the crystal growth furnace, the vacuum degree is 1×10 -3 pa;

[0051] c) Furnace body heating: Electric heating is used to heat the temperature to 2120°C;

[0052] d) Welding seed crystal: After the alumina is melted into a melt, select a C-directed single crystal seed crystal to contact the surface of the melt for seeding;

[0053] e) Crystal neck growth: when the single crystal seed diameter in step d) is reduced to 6mm, pull the seed rod upward at a speed of 0.5mm / h and rotate at a speed of 0.8rpm, and at the same time cool down at a speed of 2°C / h ...

Embodiment 3

[0060] A kind of improved Kyropoulos method of sapphire crystal growth, described improved Kyropoulos method comprises the following steps:

[0061] a) Prepare raw materials: put 80kg of massive alumina with a purity of 99.997% into a crucible, and place the crucible in a crystal growth furnace; the diameter of the massive alumina is 2cm;

[0062] b) Vacuumize the furnace body: vacuumize the crystal growth furnace, the vacuum degree is 1×10 -3 pa;

[0063] c) Furnace body heating: Electric heating is used to heat the temperature to 2150°C;

[0064] d) Welding seed crystal: After the alumina is melted into a melt, select a single crystal seed crystal in the R direction to contact the surface of the melt for seeding;

[0065] e) Crystal neck growth: when the single crystal seed diameter in step d) is reduced to 8 mm, the seed rod is pulled upward at a speed of 1 mm / h and rotated at a speed of 2 rpm, while cooling at a speed of 5°C / h; When the quality of crystallization on...

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Abstract

The invention relates to an improved kyropoulos method for sapphire crystal growth. The method comprises the following steps: raw material preparation, furnace body vacuumizing, furnace body heating, seed welding, monocrystal growth, crystal growth, separation and annealing, and crystal taking. In the whole crystal growth process, crystals are not taken out of a crucible and are still in a hot zone, so the cooling speed of the crystals can be accurately controlled to reduce the heat stress; a solid-liquid interface is bounded by a melt when the crystals grow, so the temperature disturbance and the mechanical disturbance of the melt surface can be reduced or eliminated by the melt before reaching the solid-liquid interface; if the crystals move or rotate in the crystal growth process, the crystal growth process is easily influenced by the mechanical vibration, so the improved kyropoulos method allows the pulling of a crystal seed rod in a rotary manner to be stopped after the monocrystal formation in order to effectively avoid the influence of the crystals by the mechanical vibration; and the utilization rate of the sane alumina raw material is high.

Description

technical field [0001] The invention relates to a sapphire industrial production technology, in particular to an improved kyropoulos method for sapphire crystal growth. [0002] Background technique [0003] Sapphire is the crystal material whose hardness is second only to diamond in the world. Due to its excellent physical, mechanical, chemical and infrared light transmission properties, it has always been an urgently needed material in the fields of microelectronics, aerospace, military and other fields, especially optical-grade large-size sapphire. Materials, due to their characteristics of stable performance, large market demand, comprehensive utilization rate and high product added value, have become a hot spot in research and development and industrialization at home and abroad in recent years. my country has proposed the "National Semiconductor Lighting Project" plan since 2003, and has initially formed a large-scale production capacity of LED products in recent year...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B17/00C30B29/20
Inventor 范世炜许友生丁革建曾锡强
Owner 浙江东海蓝玉光电科技有限公司
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