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Manufacturing method of semiconductor device

A device manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as high cost and complicated process, and achieve the effect of improving device performance and carrier mobility

Active Publication Date: 2013-10-23
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

Similarly, this technique also requires additional etching of substrate trenches followed by epitaxial growth, which is also costly
[0007] To sum up, the existing methods of introducing stress in the channel region are complicated in process and high in cost

Method used

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  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device

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Embodiment Construction

[0022] The features and technical effects of the technical solution of the present invention will be described in detail below with reference to the accompanying drawings and in conjunction with schematic embodiments, and a shallow trench isolation manufacturing method that can introduce stress into the channel region easily and at low cost is disclosed. It should be pointed out that similar reference numerals represent similar structures, and the terms "first", "second", "upper", "lower" and the like used in this application can be used to modify various device structures or manufacturing processes . These modifications do not imply spatial, sequential or hierarchical relationships of the modified device structures or fabrication processes unless specifically stated.

[0023] The following will refer to Figure 1 to Figure 6 A schematic cross-sectional view is used to illustrate each step of the manufacturing method of the device according to the present invention in detail. ...

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Abstract

Provided is a manufacturing method of a semiconductor device, comprising the following steps: forming a shallow trench in a substrate (1); forming a shallow trench filling layer (4) in the shallow trench; forming a gasket cover layer (5) on the shallow trench filling layer; and implanting ion in the shallow trench filling layer and performing annealing, to form a shallow trench isolation (6). Through the method, an insulation material is formed by filling a material and implanting ion in the shallow trench, and the compressive stress is exerted to the active region of a substrate due to volume expansion of the filled material, thereby improving the carrier mobility of a future channel region, and improving the device performance.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for manufacturing a shallow trench by injecting oxygen into STI to introduce stress. Background technique [0002] Starting from the 90nm CMOS integrated circuit process, with the continuous shrinking of the device feature size, the stress channel engineering (Strain Channel Engineering) has played an increasingly important role in order to improve the channel carrier mobility. Introducing stress in the channel region through a process method can effectively improve the carrier mobility and increase the driving capability of the device. [0003] As shown in Table 1 below, studies have shown that the piezoresistivity of NMOS and PMOS with a channel region of <110> crystal orientation on the (001) wafer has a large difference, and the unit of piezoresistivity is 10 -12 cm 2 / dyn. [0004] [0005] It can be seen that in the channel length dir...

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Application Information

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IPC IPC(8): H01L21/762
CPCH01L21/762H01L21/76237H01L21/823807H01L29/7846
Inventor 尹海洲蒋葳
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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