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Improved exhaust gas emission device for diffusion furnace

A technology of tail gas emission and diffusion furnace, which is applied in the direction of diffusion/doping, crystal growth, and after treatment, can solve the problems that are not conducive to ensuring the stability of the airflow in the quartz tube, and achieve constant pressure, increase stability and repeatability, and maintain The effect of stability

Active Publication Date: 2013-10-30
YINGLI ENERGY CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the connection mode of the existing device is not conducive to ensuring the stability of the gas flow in the quartz tube from the beginning to the end during the production process

Method used

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  • Improved exhaust gas emission device for diffusion furnace
  • Improved exhaust gas emission device for diffusion furnace
  • Improved exhaust gas emission device for diffusion furnace

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Depend on image 3 It can be seen that the improved diffusion furnace tail gas treatment device includes the first gas buffer bottle, the second gas buffer bottle, exhaust equipment, pressure monitoring equipment and nitrogen compensation equipment, and the one-way connection between the pressure monitoring equipment and the nitrogen compensation equipment One end of the first gas buffer bottle is connected to the quartz tube of the diffusion furnace, the other end of the first gas buffer bottle is connected to the exhaust equipment after passing through the second gas buffer bottle, and the nitrogen compensation device is located at On the first gas buffer bottle, the pressure monitoring device is arranged on the connecting pipe between the first gas buffer bottle and the second gas buffer bottle.

Embodiment 2

[0025] Depend on Figure 4 As can be seen, the difference from Embodiment 1 is that the pressure monitoring device is arranged on the second gas buffer bottle.

Embodiment 3

[0027] Depend on Figure 5 As can be seen, the difference from Embodiment 1 is that the first gas buffer bottle is connected to the exhaust device through the sequentially connected second gas buffer bottle and the third gas buffer bottle. The nitrogen compensation device is arranged on the first gas buffer bottle, and the pressure monitoring equipment is arranged on the connecting pipe between the first gas buffer bottle and the second gas buffer bottle or on the second gas buffer bottle.

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Abstract

The invention discloses an improved exhaust gas emission device for a diffusion furnace. The device comprises a first gas surge flask, a ventilation device, a pressure monitoring device and a nitrogen compensation device. The pressure monitoring device and the nitrogen compensation device are in one-way connection; one end of the first gas surge flask is sequentially connected with a second surge flask,... an N surge flask, and then connected to the ventilation device; and the pressure monitoring device is arranged on any gas surge flask after the gas surge flask, which the nitrogen gas compensation device is in, or a connecting pipe between gas surge flasks. According to the invention, on the basis of the original device, the number of gas surge flasks is increased, the position of the pressure monitoring device is adjusted, so as to avoid lagging gas compensation, directly reduce influences of fluctuations of the ventilation device on the flow in a quartz tube, facilitate stability of flow in the quartz tube, ensure constant pressure of flow in the diffusion quartz tube, improve process stability, and ensure uniformity of square resistance and the quality of a PN junction.

Description

technical field [0001] The invention relates to the technical field of semiconductor device preparation. Background technique [0002] The main process of solar crystalline silicon cell production includes: texturing, diffusion, wet etching, deposition of anti-reflection film, screen printing and sintering. Among them, diffusion is the main process of PN junction preparation, and PN junction is the core structure of solar cells, and the quality of PN junction has an important impact on the conversion efficiency of solar crystal silicon cells. The uniformity of the square resistance is a measure of the quality of the PN junction, and the uniformity of the square resistance has a great relationship with the constant or not of the gas flow in the quartz furnace tube. The influence of airflow is very necessary. [0003] The current structure of the exhaust gas discharge device of the diffusion furnace is as follows: figure 1 As shown, it mainly includes a gas buffer bottle an...

Claims

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Application Information

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IPC IPC(8): C30B31/16
Inventor 范志东马继奎汤欢
Owner YINGLI ENERGY CHINA