A method for forming a silicon germanium source/drain structure

A silicon germanium and silicon germanium layer technology, applied in semiconductor devices and other directions, can solve problems such as device performance deterioration, and achieve the effects of performance improvement, compressive stress assurance, and lattice mismatch reduction.

Active Publication Date: 2016-03-02
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a method for forming a silicon germanium source / drain structure, so as to solve the problem of poor device performance caused by lattice mismatch and / or thermal mismatch in the prior art

Method used

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  • A method for forming a silicon germanium source/drain structure
  • A method for forming a silicon germanium source/drain structure
  • A method for forming a silicon germanium source/drain structure

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Effect test

Embodiment 1

[0050] Please refer to Figure 2a , a formation process of a silicon germanium source / drain structure, providing a substrate 1, such as a silicon substrate, etc., forming a gate structure 2 on the substrate 1, forming an isolation structure 3 in the substrate, etching The substrate 1 forms recesses on both sides of the gate structure 2, and a source / drain region 4 is formed in the recess, wherein the forming of the source / drain region 4 includes: forming a seed layer 5, and the seed layer 5 is A silicon germanium layer, a bulk layer 6 is formed on the seed layer 5, the bulk layer 6 is a silicon germanium layer or a silicon germanium boron layer, a first transition layer 8 is formed on the bulk layer, and the first transition layer 8 A second transition layer 9 is formed on it, and an upper cladding layer 7 is formed on the second transition layer 9 .

[0051] Specifically, please combine Figure 2b , the content of germanium in the growth process of the first transition laye...

Embodiment 2

[0053] Please refer to Figure 3a , a formation process of a silicon germanium source / drain structure, providing a substrate 1, such as a silicon substrate, etc., forming a gate structure 2 on the substrate 1, forming an isolation structure 3 in the substrate, etching The substrate 1 forms recesses on both sides of the gate structure 2, and a source / drain region 4 is formed in the recess, wherein the forming of the source / drain region 4 includes: forming a seed layer 5, and the seed layer 5 is A silicon germanium layer, a bulk layer 6 is formed on the seed layer 5, the bulk layer 6 is a silicon germanium layer or a silicon germanium boron layer, a transition layer 10 is formed on the bulk layer 6, and an upper layer is formed on the transition layer 10 Cladding 7.

[0054] Specifically, please combine Figure 3b , the transition layer 10 satisfies the following two conditions: 1. The germanium content decreases linearly during the growth process, that is, from the same germa...

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Abstract

The invention discloses a forming method of a silicon-germanium source / drain structure. In the forming method of the silicon-germanium source / drain structure, a buffering structure (namely two transition layers or one transition layer) is increased between a body layer and an overlaying layer, the content of germanium can be gradually reduced, and therefore lattice mismatch is greatly reduced; meanwhile the temperature can be gradually changed, heat mismatch is avoided, therefore pressure stress of a silicon-germanium layer can be guaranteed, and performance of a device can be promoted.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for forming a silicon germanium source / drain structure. Background technique [0002] In the advanced complementary metal oxide semiconductor (CMOS) industry, in order to improve the performance of PMOS, the material usually used in the source / drain region is silicon germanium (SiGe), and the source / drain region mainly includes three layers: the seed layer (seed) , bulk and cap. [0003] Such as Figure 1a As shown, it is a schematic diagram of a silicon germanium source / drain structure formed by an existing process, a gate structure 2 and an isolation structure 3 are formed on a substrate 1, and source / drain regions 4 are formed on both sides of the gate structure 2, specifically , the source / drain region 4 includes a seed layer 5 , a bulk layer 6 and an upper cladding layer 7 . The bulk layer 6 is usually a silicon germanium (boron) layer, and the uppe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28
Inventor 涂火金
Owner SEMICON MFG INT (SHANGHAI) CORP
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