Forming method of semiconductor device and forming method of fin type field effect transistor

Abstract

The invention provides the forming method of a semiconductor device. The forming method comprises the steps of providing a semiconductor substrate; carrying out a doping process on the semiconductor substrate; forming a doped layer on the surface of the semiconductor substrate; forming a hard mask layer located on the surface of the doped layer; etching a part of the doped layer by using the hard mask layer as a mask; forming a first sub fin part; forming an insulating layer on the surface of the semiconductor substrate, wherein the surface of the insulating layer is flush with the top of the first sub fin part; after the insulating layer is formed, removing the first sub fin part of part of thickness to form an opening; and forming a second sub fin part within the opening, wherein the top of the second sub fin part is flush with the surface of the insulating layer. The invention further provides a forming method of a fin type field effect transistor. Formed semiconductor device and the fin type field effect transistor have the advantages of large channel region stress, high carrier mobility ratio, low threshold voltage, small gate leakage current and stable performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor device and a method for forming a fin field effect transistor. Background technique [0002] With the continuous development of semiconductor process technology, the process node is gradually reduced, and the gate-last (gate-last) process has been widely used to obtain an ideal threshold voltage and improve device performance. However, when the feature size (CD, Critical Dimension) of the device is further reduced, even if the gate-last process is adopted, the structure of the conventional MOS field effect transistor can no longer meet the requirements for device performance. Widespread concern. [0003] Fin field effect transistor (Fin FET) is a common multi-gate device, figure 1 A schematic diagram of a three-dimensional structure of a fin field effect transistor in the prior art is shown. Such as figure 1 As shown, i...

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Problems solved by technology

[0004] However, as the process node is further reduced, there are problems with the device performance of the prior art FinFET

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