Multilayer hexagonal substrate integrated waveguide filter

A substrate-integrated waveguide and hexagonal technology, applied in waveguide devices, electrical components, circuits, etc., can solve the problems of increased design difficulty, increased filter volume, and higher loss

Inactive Publication Date: 2013-12-04
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

A common method to achieve high selectivity of the filter is to increase the number of stages of the filter, thereby generating more transmission zeros to increase the steepness of the stop band and improve the out-of-band selectivity, but thi

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  • Multilayer hexagonal substrate integrated waveguide filter
  • Multilayer hexagonal substrate integrated waveguide filter
  • Multilayer hexagonal substrate integrated waveguide filter

Examples

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Example Embodiment

[0020] Example

[0021] In this embodiment, the materials of the first dielectric substrate 2 and the second dielectric substrate 4 of the multilayer hexagonal substrate integrated waveguide filter are Ferro-A6M ceramic substrates, and the relative dielectric constant ε r =5.9, the loss tangent is 0.0015, and the thickness of the single layer after sintering is 0.096mm. Each dielectric substrate is composed of four layers of ceramic substrates. The material of the first metal layer 1, the second metal layer 3, and the third metal layer 5 is gold or silver, and the thickness is 8-12um. The through hole filling material is gold or silver , The diameter of the through hole is 0.17~0.22mm, and the hole spacing is 0.45~0.65mm. The specific structure size of the multilayer hexagonal substrate integrated waveguide filter is marked as figure 2 , image 3 As shown, the specific corresponding parameters are shown in the following table:

[0022] Parameter

[0023] The transmission chara...

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Abstract

The invention discloses a multilayer hexagonal substrate integrated waveguide filter which is high in selectivity, low in loss and small in size. The filter comprises a first metal layer, a first dielectric substrate, a second metal layer, a second dielectric substrate and a third metal layer. The first dielectric substrate is provided with a first resonant cavity and a fourth resonant cavity, the second dielectric substrate is provided with a second resonant cavity and a third resonant cavity, and a '2'-shaped mixed coupling slot is formed in the second dielectric substrate and located between the second resonant cavity and the third resonant cavity. The filter can be added with extra transmission zeros, so that out-of-band selectivity of the filter can be improved without increasing excessive filter levels, and the positions of the transmission zeros can be flexibly controlled by means of adjusting size of electric coupling and magnetic coupling coefficients; moreover, the filter is small in size, low in loss, and suitable for popularization and application in the technical fields of microwaves and millimeter waves.

Description

technical field [0001] The invention relates to the field of microwave and millimeter wave technology, in particular to a multilayer hexagonal substrate integrated waveguide filter. Background technique [0002] Filters are the basic components of microwave circuits, and their performance directly affects the performance of the entire system. Traditional filters are generally divided into planar microstrip or stripline structure filters and metal waveguide structure filters. Although the planar microstrip / stripline structure filter is easy to integrate, it occupies a large area, has a large loss, and has a low Q value. Although the metal waveguide structure filter has the characteristics of small insertion loss, high quality factor, and good selectivity, it is bulky, troublesome in processing and debugging, and is not conducive to integration with active circuit substrates. [0003] The filter based on the substrate integrated waveguide technology not only retains the char...

Claims

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Application Information

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IPC IPC(8): H01P1/205
Inventor 徐自强张根徐美娟尉旭波廖家轩汪澎杨邦朝田忠
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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