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High-hardness, high-heat-dissipation and low-expansion aluminum-base ceramic composite and preparation method thereof

A composite material, high heat dissipation technology, applied in the field of aluminum-based ceramic composite materials, can solve the problem of obvious gap between high-end devices, and achieve the effect of low thermal expansion coefficient and high thermal conductivity

Inactive Publication Date: 2014-08-27
无锡洛能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Although my country has the largest power semiconductor market in the world, there is still a big gap between the research and development of domestic power semiconductor products and international companies, especially the gap between high-end devices is more obvious

Method used

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  • High-hardness, high-heat-dissipation and low-expansion aluminum-base ceramic composite and preparation method thereof
  • High-hardness, high-heat-dissipation and low-expansion aluminum-base ceramic composite and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0058] (1) Prepare the base material: Add the binder into water whose mass is 9 times that of the binder, stir to generate foam, then add 1-2 drops of defoamer for defoaming; then add magnesium powder and silicon carbide respectively , stirred evenly, poured into a mold for die-casting; the mass percentages of the raw materials are: binding agent 6%, magnesium powder 1%, silicon carbide 93%, and the binding agent is hydroxypropyl methylcellulose;

[0059] (2) Sintering substrate: Put the die-cast substrate into a far-infrared heating furnace, heat it to a temperature of 250°C within 20 minutes, keep heating for 20 minutes, then heat it to 1600°C within 20 minutes, and heat it for 30 minutes;

[0060] (3) Substrate aluminizing: Put the sintered substrate into the Taiji infiltration furnace, heat the substrate to 500°C under the condition of negative pressure -1.5~-2.0MPa, and at the same time put the aluminum liquid at 800~850°C Melt, pour the molten aluminum on the substrate, ...

Embodiment 2

[0062] (1) Prepare the base material: Add the binder into water whose mass is 6 times the binder’s mass, stir to generate foam, then add 1-2 drops of defoamer for defoaming; then add magnesium powder and silicon carbide respectively , stirred evenly, poured into a mold for die-casting; the mass percent of the raw materials is: 8% binder, 1% magnesium powder, 91% silicon carbide, and the binder is hydroxypropyl methylcellulose;

[0063] (2) Sintering base material: put the die-cast base material into a far-infrared heating furnace, heat to a temperature of 200°C within 10 minutes, keep heating for 10 minutes, then heat to 1500°C within 10 minutes, and heat for 20 minutes;

[0064] (3) Substrate aluminizing: Put the sintered substrate into the Taiji infiltration furnace, heat the substrate to 500°C under the condition of negative pressure -1.5~-2.0MPa, and at the same time put the aluminum liquid at 800~850°C Melt, pour the molten aluminum on the substrate, fill the Taiji infilt...

Embodiment 3

[0066] (1) Prepare the base material: add the binder into water whose mass is 8 times that of the binder, stir to generate foam, then add 1-2 drops of defoamer for defoaming; then add magnesium powder and silicon carbide respectively , stirred evenly, poured into a mold for die-casting; the mass percentages of the raw materials are: 5% binder, 0.5% magnesium powder, 94.5% silicon carbide, and the binder is hydroxypropyl methylcellulose;

[0067] (2) Sintering substrate: Put the die-cast substrate into a far-infrared heating furnace, heat it to a temperature of 300°C within 30 minutes, keep heating for 30 minutes, then heat it to 1800°C within 30 minutes, and heat it for 10 minutes;

[0068] (3) Substrate aluminizing: Put the sintered substrate into the Taiji infiltration furnace, heat the substrate to 500°C under the condition of negative pressure -1.5~-2.0MPa, and at the same time put the aluminum liquid at 800~850°C Melt, pour the molten aluminum on the substrate, fill the T...

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Abstract

The invention relates to a high-hardness, high-heat-dissipation and low-expansion aluminum-base ceramic composite. A preparation method of the composite comprises the steps that the composite is formed by sintering and aluminizing a substrate forming the composite, wherein the substrate comprises the following raw materials by mass percent: 5-8% of stitching agent, 0.5-1.0% of magnesium powder and the balance of silicon carbide, and the stitching agent is hydroxypropyl methyl cellulose. The aluminum-base ceramic composite has high strength, low density, high heat conductivity and high specific stiffness.

Description

technical field [0001] The invention relates to the technical field of power semiconductors, in particular to an aluminum-based porcelain composite material used for power semiconductor chips. Background technique [0002] Power semiconductors play a huge role in product energy saving. In the foreseeable future, whether it is hydropower, nuclear power, thermal power or wind power, or even chemical electricity provided by various batteries, will be the most important energy consumed by human beings. Among them, more than 75% of electric energy applications need to be converted by power semiconductors before they can be used by electronic equipment, and power semiconductors can also make the use of electric energy more efficient, more energy-saving, and more environmentally friendly, providing users with more convenience. Therefore, the development and application prospects of power semiconductors will be very broad. The scope of application is expanding from the traditional...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/56C04B35/622
Inventor 强光初
Owner 无锡洛能科技有限公司
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