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Method for preparing non-polar surface gallium nitride nanometer cone material

A gallium nitride nanometer, non-polar surface technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems affecting the performance of GaN nanowire devices

Active Publication Date: 2013-12-18
SHENZHEN INSTITUTE OF INFORMATION TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, metals are often used as catalysts in the conventional nanowire growth process, which introduces metal impurities into the nanowire material, which easily affects the performance of subsequent GaN nanowire devices.

Method used

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  • Method for preparing non-polar surface gallium nitride nanometer cone material
  • Method for preparing non-polar surface gallium nitride nanometer cone material
  • Method for preparing non-polar surface gallium nitride nanometer cone material

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[0023] The embodiment of the present invention provides a method for preparing a non-polar gallium nitride nanocone material with simple process and easy controllable conditions. The process flow of the method is as follows Figure 8 shown, see also Figure 1-7 . The preparation method of the nonpolar gallium nitride nanocone material comprises the following steps:

[0024] S01. Obtain a lithium aluminate substrate 1;

[0025] S02. Epitaxial gallium nitride buffer layer 2: epitaxial gallium nitride buffer layer 2 on the lithium aluminate substrate 1 obtained in step S01;

[0026] S03. Epitaxial gallium nitride template layer 3: epitaxial gallium nitride template layer 3 on the outer surface of the gallium nitride buffer layer 2 generated in step S02;

[0027] S04. Growing GaN nanocones 4: growing GaN nanocones 4 at 700-900°C on the GaN template layer 3 epitaxially formed in step S03 by HCl gas-assisted growth.

[0028] Specifically, in the above step S01, the obtained thic...

Embodiment 1

[0039] A non-polar gallium nitride nanocone material and its preparation method. The method is as follows:

[0040] A 50nm-thick GaN buffer layer and a 3μm-thick GaN template layer were sequentially grown on a lithium aluminate crystal substrate using a traditional two-step growth method in metal-organic vapor deposition (MOCVD). Then, the reactor structure and quartz sidewalls were placed In the vertical dual temperature zone hydride vapor phase epitaxy (HVPE) reaction chamber with a large amount of GaN powder left, the reactor structure and the large amount of GaN powder left on the quartz side wall are directly used as evaporation sources. 1000sccm of high-purity N is passed through the whole heating and growth process 2 As a carrier gas, when the reaction chamber reaches the growth temperature of 780°C, 50 sccm of HCl is introduced to assist the reaction, and the growth time is 3 minutes. Reach around the GaN powder source attached to the reactor and quartz sidewalls. A...

Embodiment 2

[0042] A non-polar gallium nitride nanocone material and its preparation method. For this method, refer to the preparation method of the non-polar gallium nitride nanocone material in Example 1. The difference is that 50 sccm of HCl is introduced to assist the reaction, and the growth time is 20 minutes respectively. After opening the furnace body and taking out the sample, the obtained non-polar gallium nitride nanocone material is as follows: image 3 shown. Compared with the GaN nanocone 41 in Embodiment 1, the GaN nanocone 42 has a nanotip-like structure.

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Abstract

The invention discloses a method for preparing a non-polar surface gallium nitride nanometer cone material. The non-polar surface gallium nitride nanometer cone material comprises a lithium aluminate substrate, a gallium nitride buffer layer, a gallium nitride template layer and gallium nitride nanometer cones, wherein the lithium aluminate substrate, the gallium nitride buffer layer and the gallium nitride template layer are sequentially overlapped and combined with one another, and the gallium nitride nanometer cones grow on the outer surface of the gallium nitride template layer. The method includes the steps of obtaining the lithium aluminate substrate, the gallium nitride buffer layer, the gallium nitride template layer and the gallium nitride nanometer cones. According to the non-polar surface gallium nitride nanometer cone material, the gallium nitride nanometer cones grow on the outer surface of the gallium nitride template layer, and the gallium nitride nanometer cones are distributed in an array mode. Meanwhile, no metal impurity pollution exists, and the wafer quality is high. According to the method, HCl gas is directly used for assisting in growth of the gallium nitride nanometer cones, and a catalyst or other masks are prevented from being used. In addition, the quality and the structure of the array of the gallium nitride nanometer cones can be determined according to the application requirement, the method is simple and easy to operate, and the requirement for annealing equipment is not high.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a preparation method of a nonpolar gallium nitride nanocone material. Background technique [0002] One-dimensional GaN nanostructures have both the advantages of GaN materials and low-dimensional characteristics, and have unique applications in mesoscopic physics and nano-devices. Ideal research object; at the same time, one-dimensional GaN nanostructures can also play the role of interconnection and functional units in the fabrication of nanoscale electronic and optoelectronic devices, such as blue-emitting LEDs and ultraviolet nanolasers. Due to these unique properties and very attractive application prospects, one-dimensional GaN nanomaterials are becoming a new hotspot in the field of nitride research. [0003] One-dimensional GaN nanostructures can be prepared by advanced nanofabrication techniques, such as electron beam and focused particle beam direct ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
Inventor 王新中唐飞李世国张宗平何国荣谢华
Owner SHENZHEN INSTITUTE OF INFORMATION TECHNOLOGY